CBSL30B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 BAL FLG The ASI CBSL30B is Designed for .020 x 45° A B FEATURES: Ø.130 NOM. .050 x 45° E • • • Omnigold™ Metalization System C N D F G H I J L MAXIMUM RATINGS K IC 5.0 A VCBO 48 V PDISS 43 W @ TC = 25 C O TSTG -65 C to +150 C θ JC 3.0 OC/W SYMBOL D .243 / 6.17 .255 / 6.48 E .630 / 16.00 .670 / 17.01 .092 / 2.34 G .555 / 14.10 .565 / 14.35 H .739 / 18.77 .750 / 19.05 I .315 / 8.00 .327 / 8.31 J .002 / 0.05 .006 / 0.15 K .055 / 1.40 .065 / 1.65 L .075 1.91 .095 / 2.41 .190 / 4.83 M O CHARACTERISTICS .065 / 1.65 .125 / 3.18 F -65 OC to +200 OC TJ .055 / 1.40 C O inches / mm .060 / 1.52 B 4.0 V VEBO MAXIMUM inches / mm A 45 V VCES MINIMUM DIM M .245 / 6.22 N .257 / 6.53 ORDER CODE: ASI10583 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 48 50 --- V BVCEO IC = 20 mA 25 30 --- V BVEBO IE = 5 mA 3.5 4.0 --- V ICBO VCB = 24 V 1.0 mA hFE VCE = 5.0 V 100 --- COB VCB = 24 V 25 pF PG VCC = 24 V POUT = 30 W IC = 100 mA 20 f = 1.0 MHz ICQ = 2 X 75 mA f = 960 MHz 7.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. dB REV. A 1/1