MLN1033F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI MLN1033F is Designed for A ØD FEATURES: B .060 x 45° CHAMFER C E • • • Omnigold™ Metalization System G L F H J I K M NP MAXIMUM RATINGS IC 0.5 A VCBO 40 V 25 V VCES PDISS O O O TSTG -65 C to +150 C θ JC 17 OC/W CHARACTERISTICS SYMBOL inches / mm .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 MAXIMUM .255 / 6.48 .132 / 3.35 .125 / 3.18 .110 / 2.79 .117 / 2.97 .117 / 2.97 G -65 C to +200 C TJ inches / mm .028 / 0.71 F 20.6 W @ TC = 25 OC O MINIMUM A E 3.5 V VEBO DIM H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10626 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 2 mA 40 V BVCEO IC = 5 mA 25 V BVEBO IE = 2 mA 3.5 V hFE VCE = 5.0 V PG VCE = 18 V POUT = 2.0 W IC = 400 mA ICQ = 220 mA 15 f = 1.0 GHz 12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 150 --dB REV. A 1/1