MRF652S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz. PACKAGE STYLE .280 4L PILL FEATURES: A • Common Emitter • PG = 10 dB at 5.0 W/512 MHz • Omnigold™ Metalization System E C ØB MAXIMUM RATINGS E IC 2.0 A VCBO 36 V VCER 16 V VEBO 4.0 V PDISS TJ B ØC D E DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM 25 W @ TC = 25 °C B C .275 / 6.99 .285 / 7.24 -65 °C to +200 °C D .004 / 0.10 .006 / 0.15 E .050 / 1.27 .060 . 1.52 F .118 / 3.00 .130 / 3.30 TSTG -65 °C to +150 °C θJC 200 °C/W CHARACTERISTICS 1.055 / 26.80 TC = 25 °C NONETEST CONDITIONS SYMBOL F MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 16 V BVCES IC = 25 mA 36 V BVCBO IC = 25 mA 36 V BVEBO IE = 5.0 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 15 V PG ηC VCC = 12.5 V IC = 200 mA 10 f = 1.0 MHz POUT = 5.0 W f = 512 MHz 9.5 10 60 11 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 150 --- 15 pF dB % REV. B 1/1