D10-28 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD DESCRIPTION: The ASI D10-28 is Designed for General Purpose UHF Amplifier Applications up to 1200 MHz. A 45° C E E B FEATURES: B • PG = 5.2 dB Typ. at 10 W/960 MHz • Emitter Ballasting for Ruggedness • Omnigold™ Metallization System C D J E I F G H K MAXIMUM RATINGS 1.0 A IC VCEO 30 V PDISS 20 W @ TC = 25 °C TJ -65 to +200 °C TSTG -65 to +150 °C θJC O #8-32 UNC DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .137 / 3.48 .572 / 14.53 F .130 / 3.30 G H MAXIMUM .245 / 6.22 .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 8.8 C/W CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 30 V BVCES IC = 10 mA 50 V BVEBO IE = 5.0 mA 4.0 V ICBO VCE = 28 V hFE VCE = 5.0 V CCB VCB = 28 V PG ηC VCE = 28 V IC = 100 mA 15 f = 1.0 MHz POUT = 10 W f = 960 MHz 5.2 50 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 250 µA 150 --- 12 pF dB % REV. A 1/1