VHB40-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The VHB40-12F is Designed for Class C Amplifier Applications in VHF Mobile Radios. PACKAGE STYLE .380 4L FLG FEATURES: B • PG = 9.5 dB Typ. at 40 W /175 MHz • η C = 60% Typ. at 40 W /175 MHz • Omnigold™ Metalization System .112 x 45° A Ø.125 NOM. FULL R J .125 C D MAXIMUM RATINGS IC 5.0 A VCBO 36 V G 18 V VCEO 4.0 V VEBO E F PDISS 70 W @ TC = 25 C TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θ JC 2.9 OC/W DIM MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .385 / 9.78 E O .180 / 4.57 .280 / 7.11 I CHARACTERISTICS SYMBOL H I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10716 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 50 mA 36 V BVCEO IC = 50 mA 18 V BVEBO IE = 10 mA 4.0 V ICES VCE = 15 V hFE VCE = 5.0 V Cob VCB = 12.5 V PG ηC VCC = 12.5 V IC = 5.0 A 20 f = 1.0 MHz POUT = 40 W f = 175 MHz 8.5 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 200 --- 135 pF dB % REV. A 1/1