MRF837 NPN SILICON RF LOW POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE MACRO-X The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.44 5.21 0.175 0.205 C 1.90 2.54 0.075 0.100 D 0.84 0.99 0.033 0.039 FEATURES INCLUDE: • Min gain 8.0 dB @ 750 mW/870 MHz • Silicon Nitride passivated • Low cost Plastic Package MAXIMUM RATINGS 200 mA IC VCBO 36 V PDISS 1.0 W @ TC = 25 °C TJ -65 °Cto +150 °C TSTG -65 °Cto +150 °C θJC 40 °C/W CHARACTERISTICS F 0.20 0.30 0.008 0.012 G 0.76 0.14 0.030 0.045 K 7.24 8.13 0.285 0.320 L 10.54 11.43 0.415 0.450 N --- 1.65 --- 0.065 1 = COLLECTOR 2 =EMITER 3 = BASE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 5.0 mA 36 V BVCEO IC = 5.0 mA 16 V BVEBO IE = 100 µA 4.0 V ICES VCE = 15 V hFE VCE = 10 V COB VCB = 15 V PG ηC VCE = 12.5 V IC = 50 mA 30 f = 1.0 MHz POUT = 0.75 W f = 870 MHz 1.8 8.0 55 10 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 100 µA 200 --- 2.5 pF dB % REV. A 1/1