MRF8372 NPN SILICON LOW POWER TRANSISTOR DESCRIPTION: The ASI MRF8372 is Designed for Wideband large signal stages in the 800 MHz and UHF frequency ranges. PACKAGE STYLE SO-8 FEATURES: • POUT = 750 mW • PG = 8.0 dB min. • η = 60% typical • R1 suffix – Tape and Reel, 500 units • R2 suffix – Tape and Reel, 2500 units MAXIMUM RATINGS IC 200 mA VCBO 30 V VCEO 16 V VEBO 3.0 V PDISS 2.2 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 45 °C/W CHARACTERISTICS PIN 1,4,5,8 = EMITTER PIN, 6, 7 = BASE TC = 25°C NONETEST CONDITIONS SYMBOL PIN 2,3 = COLLECTOR MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 5.0 mA 30 V BVCEO IC = 5.0 mA 16 V BVEBO IE = 0.1 mA 3.0 V ICES VCE = 15 V hFE VCE = 5.0 V COB VCB = 15 V PG ηC VCE = 12.5 V IC = 50 mA 30 f = 1.0 MHz POUT = 0.75 W f = 870 MHz 8.0 50 9.5 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. .0 mA 200 --- 2.75 pF dB % REV. A 1/1