MRF839F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 6L FLG The MRF839F is Designed for Class AB, Common Emitter Applicatons Up to 960 MHz. A .040x45° B C 2XØ.130 4X .025 R .115 .430 D E FEATURES INCLUDE: G • Input Matching Network • High Gain • Gold Metalization H I J K MAXIMUM RATINGS 0.6 A IC VCES 36 V PDISS 20 W @ TC = 25 C O O O -55 C to +200 C TJ O F .125 DIM MINIMUM inches / mm inches / mm A .355 / 9.02 .365 / 9.27 B .115 / 2.92 .125 / 3.18 C .075 / 1.91 .085 / 2.16 D .225 / 5.72 .235 / 5.97 E .090 / 2.29 .110 / 2.79 F .720 / 18.29 .730 / 18.54 G .970 / 24.64 .980 / 24.89 H .355 / 9.02 .365 / 9.27 I .004 / 0.10 .006 / 0.15 J .120 / 3.05 .130 / 3.30 K .160 / 4.06 .180 / 4.57 L .230 / 5.84 .260 / 6.60 L MAXIMUM O TSTG -55 C to +150 C θJC 9.0 C/W 1 & 3 & 4 & 6 = EMITTER 2 = BASE 5 = COLLECTOR O CHARACTERISTICS O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 5.0 mA 40 V BVCEO IC = 5.0 mA 16 V BVEBO IE = 100 µA 3.5 V ICES VCE = 15 V hFE VCE = 5.0 V COB VCB = 15 V PG ηC VCE = 12.5 V FO = 870 MHz IC = 100 mA 10 f = 1.0 MHz ICQ = 50mA POUT = 3.0 W 8.0 50 10.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1 mA 150 --- 10 pF dB % REV. A 1/1