ASAT35L NPN RF POWER TRANSISTOR DESCRIPTION: The ASAT35L is a Common Base Transistor Designed for L-Band Satcom Amplifier Applications. PACKAGE STYLE 400 2L FLG FEATURES INCLUDE: • Input/Output Matching Networks • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS IC 3.5 A VCBO 50 V PDISS 55 W @ TC = 25 C TJ -55 C to+200 C TSTG -55 C to+200 C θJC 2.6 C/W O O O O O 1 = Collector O CHARACTERISTICS SYMBOL 2 & 4 = Base 3 = Emitter O TC = 25 C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 20 mA 50 V BVCES IC = 20 mA 50 V BVEBO IE = 10 mA 3.5 V ICES VCE = 28 V hFE VCE = 5 V IC = 2.0 A PG ηC VCE = 28 V POUT = 35 W f = 1500 - 1600 MHz ZCL ZIN VCE = 28 V POUT = 35 W ZCL ZIN VCE = 28 V POUT = 35 W 20 8.0 45 5.0 mA 300 --- 9.0 50 dB % f = 1500 MHz 3.0 + j0.5 4.0 + j15.0 Ohms f = 1600 MHz 1.8 + j1.0 5.5 + j16.2 Ohms A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1