MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG (B) A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: E F G • Input matching • Emitter site Ballasted. • PG = 10 dB at 35 W/1150 MHz • Omnigold™ Metalization System H I MAXIMUM RATINGS 3.0 A IC 55 V MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 MAXIMUM C .245 / 6.22 D .120 / 3.05 .140 / 3.56 E .552 / 14.02 .572 / 14.53 F .790 / 20.07 .810 / 20.57 .003 / 0.08 .007 / 0.18 .255 / 6.48 .285 / 7.24 H PDISS 150 W @ TC ≤ 100 °C TJ -65 °C to +250 °C TSTG -65 °C to +150 °C θJC 1.0 ° C/W K DIM G VCC J I .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 .210 / 5.33 K O CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL BVCBO IC = 10 mA BVCER IC = 10 mA BVEBO IE = 1.0 mA ICES VCE = 50 V hFE VCE = 5.0 V PG ηC VCC = 50 V PIN = 3.0 W RBE = 10 Ω IC = 500 mA POUT = 35 W MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 15 f = 1025-1150 MHz UNITS 10.7 43 11.2 48 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 120 --dB % REV. C 1/1