2N4429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2N4429 is Designed for Class C Amplifier Applications Up to 1,000 MHz. A 45° B FEATURES: • PG = 7.5 dB Typ. at 1.0 W/1000 MHz • Emitter Ballasting for Ruggedness • Omnigold™ Metallization System C D J E I F G H K MAXIMUM RATINGS 1.0 A IC 45 V VCB O PDISS 7.0 W @ TC = 25 C TJ -65 to +200 C TSTG -65 to +150 C DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .245 / 6.22 H θJC 25 C/W CHARACTERISTICS SYMBOL IC = 1 mA BVCER IC = 20 mA BVEBO IE = 1 mA J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10900 NONE O TC = 25 C TEST CONDITIONS BVCBO .255 / 6.48 .640 / 16.26 I O .137 / 3.48 .130 / 3.30 G O MAXIMUM .572 / 14.53 F O #8-32 UNC MINIMUM TYPICAL MAXIMUM RBE = 10 Ω V 45 V 3.5 V ICBO VCE = 28 V hFE VCE = 5.0 V IC = 100 mA 15 Ft VCE = 20 V IC = 100 mA 600 Cob VCB = 28 V PG ηC VCE = 28 V f = 1,000 MHz 250 µA 150 --MHz f = 1.0 MHz POUT = 5.0 W UNITS 45 5.0 6.5 40 7.5 50 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.