ASI VHB40-28F

VHB40-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .380 4L FLG
The ASI VHB40-28F is Designed for
B
FEATURES:
.112 x 45°
A
•
•
• Omnigold™ Metalization System
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
MAXIMUM RATINGS
G
IC
5.0 A
VCBO
65 V
35 V
VCE0
4.0 V
VEBO
-65 OC to +200 OC
TJ
O
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.785 / 19.94
C
.720 / 18.29
.730 / 18.54
D
.970 / 24.64
.980 / 24.89
.385 / 9.78
F
.004 / 0.10
G
.085 / 2.16
.006 / 0.15
.105 / 2.67
H
.160 / 4.06
.180 / 4.57
.280 / 7.11
I
.240 / 6.10
J
.255 / 6.48
O
TSTG
-65 C to +150 C
θ JC
2.9 OC/W
CHARACTERISTICS
SYMBOL
MAXIMUM
DIM
E
60 W
PDISS
H I
ORDER CODE: ASI10726
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 200 mA
35
V
BVCES
IC = 200 mA
65
V
BVCBO
IC = 10 mA
65
V
BVEBO
IE = 10 mA
4.0
V
ICBO
VCB = 30 V
1.0
mA
ICES
VCE = 30 V
10
mA
hFE
VCE = 5.0 V
200
---
Cob
VCB = 30 V
65
pF
PG
ηC
VCE = 28 V
IC = 500 mA
5.0
f = 1.0 MHz
PIN = 7.0 W
f = 175 MHz
7.6
dB
60
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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