AUK SBT3906F

SBT3906F
Semiconductor
PNP Silicon Transistor
Descriptions
• General small signal application
• Switching application
Features
• Low collector saturation voltage
• Collector output capacitance
• Complementary pair with SBT3904F
Ordering Information
Type NO.
Marking
Package Code
SBT3906F
2A
SOT-23F
Outline Dimensions
unit : mm
2.4±0.1
1.6±0.1
1.90 BSC
KST-2084-001
0.9±0.1
0.15±0.05
2
0.4±0.05
3
0~0.1
2.9±0.1
1
PIN Connections
1. Base
2. Emitter
3. Collector
1
SBT3906F
Ta=25°°C
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-40
V
Collector-Emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
IC
-200
mA
350
mW
Tj
150
°C
Tstg
-55~150
°C
Collector current
Collector dissipation
PC
Junction temperature
Storage temperature range
*
* : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=-10µA, IE=0
-40
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
-40
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=-10µA, IC=0
-5
-
-
V
Collector cut-off current
ICEX
VCE=-30V, VEB=-3V
-
-
-50
nA
DC current gain
hFE
VCE=-1V, IC=-10mA
100
-
300
-
VCE(sat)
IC=-50mA, IB=-5mA
-
-
-0.4
V
fT
VCE=-20V, IC=-10mA,
f=100MHz
250
-
-
MHz
VCB=-5V, IE=0, f=1MHz
-
-
4.5
pF
VCC=-3Vdc, VBE(off)=-0.5Vdc,
IC=-10mAdc, IB1=-1mAdc
-
-
35
ns
-
-
35
ns
-
-
225
ns
-
-
75
ns
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Cob
Delay time
td
Rise time
tr
Storage time
ts
Fall Time
tf
VCC=-3Vdc,IC=-10mAdc,
IB1=IB2=-1mAdc
KST-2084-001
2
SBT3906F
Electrical Characteristic Curves
Fig. 1 PC-Ta
Fig. 2 hFE-IC
Fig. 3 VCE(sat)-IC
KST-2084-001
3