PN2222A Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with PN2907A Ordering Information Type NO. Marking Package Code PN2222A PN2222A TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 14.0±0.40 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 14.0±0.40 0.4±0.02 KST-9008-000 1 PN2222A Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 75 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10µA, IE=0 75 - - V Collector-Emitter breakdown voltage BVCEO IC=10mA, IB=0 40 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V Collector cut-off current ICBO VCB=75V, IE=0 - - 20 nA DC current gain hFE VCE=10V, IC=10mA 100 - - - - - 0.4 V 250 - - MHz VCB=10V, IE=0, f=1MHz - - 8 pF VCC=30Vdc, VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc - - 10 ns - - 25 ns VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc - - 225 ns - - 60 ns Collector-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob Delay time td Rise time tr Storage time ts Fall Time tf IC=150mA, IB=15mA VCE=20V, IC=20mA, f=100MHz KST-9008-000 2 PN2222A Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC Fig. 4 Cob-VCB KST-9008-000 3