DN030E Semiconductor NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA/10mA) • Suitable for low voltage large current drivers • Complementary pair with DP030E • Switching Application Ordering Information Type NO. Marking DN030E Package Code N01 SOT-523F Outline Dimensions unit : mm 1.60±0.1 1 3 2 1.11±0.05 0~0.1 0.25~0.30 1.00±0.1 0.68 +0.1 -0.05 1.60±0.1 0.88±0.1 KST-4009-000 PIN Connections 1. Base 2. Emitter 3. Collector 1 DN030E Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 12 V Emitter-Base voltage VEBO 5 V Collector current IC 300 mA Collector dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature T stg -55~150 °C Electrical Characteristics Characteristic (Ta=25° C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=50µA, I E =0 15 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB =0 12 - - V Emitter-Base breakdown voltage BVEBO IE =50µA, IC =0 5 - - V Collector cut-off current ICBO VCB=12V, IE =0 - - 0.1 µA Emitter cut-off current IEBO VEB =5V, I C=0 - - 0.1 µA h FE1 VCE=1V, IC =100mA 200 - 450 - h FE2 VCE=1V, IC =300mA 70 - - - DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance VCE(sat1) IC=100mA, IB =10mA - - 0.2 V VCE(sat2) IC=300mA, IB =30mA - - 0.5 V VBE(sat 1) IC=100mA, IB =10mA - - 1.2 V VBE(sat2) IC=300mA, IB =30mA - - 1.7 V VCE=5V, IC =10mA - 300 - MHz VCB=10V, IE =0, f=1MHz - 3 - PF fT C ob KST-4009-000 2 DN030E Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 3 hFE - IC Fig. 2 IC -VBE Fig. 4 IC - VCE ` Fig. 5 VCE(sat) - IC KST-4009-000 3