AUK STN2222

STN2222
Semiconductor
NPN Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• Large collector current
• Low collector saturation voltage
• Complementary pair with STN2907
Ordering Information
Type NO.
Marking
Package Code
STN2222
STN2222
TO-92
Outline Dimensions
unit : mm
3.45±0.1
4.5±0.1
4.5±0.1
2.25±0.1
2.06±0.1
14.0±0.40
0.4±0.02
1.27 Typ.
2.54 Typ.
PIN Connections
1. Emitter
2. Base
3. Collector
0.38
1.20±0.1
1 2 3
KST-9061-001
1
STN2222
Ta=25°°C
Absolute maximum ratings
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
60
V
Collector-Emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
600
mA
Collector dissipation
PC
625
mW
Junction temperature
Tj
150
°C
Tstg
-55~150
°C
Storage temperature range
Ta=25°°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=10µA, IE=0
60
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=10mA, IB=0
30
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=10µA, IC=0
5
-
-
V
Collector cut-off current
ICBO
VCB=60V, IE=0
-
-
10
nA
DC current gain
hFE
VCE=10V, IC=10mA
75
-
-
-
-
-
0.4
V
250
-
-
MHz
-
6.0
-
pF
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
VCE(sat)
fT
Cob
IC=150mA, IB=15mA
VCE=20V, IC=20mA
VCB=10V, IE=0, f=1MHz
KST-9061-001
2
STN2222
Electrical Characteristic Curves
Fig. 1 PC-Ta
Fig. 2 IC-VBE
10V
Fig. 3 IC-VCE
Fig. 4 VCE(sat)-IC
Fig. 6 hFE-IC
Fig. 5 hFE-IC
10V
KST-9061-001
3