STN2222 Semiconductor NPN Silicon Transistor Descriptions • General purpose application • Switching application Features • Large collector current • Low collector saturation voltage • Complementary pair with STN2907 Ordering Information Type NO. Marking Package Code STN2222 STN2222 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9061-001 1 STN2222 Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10µA, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=10mA, IB=0 30 - - V Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 5 - - V Collector cut-off current ICBO VCB=60V, IE=0 - - 10 nA DC current gain hFE VCE=10V, IC=10mA 75 - - - - - 0.4 V 250 - - MHz - 6.0 - pF Collector-Emitter saturation voltage Transistor frequency Collector output capacitance VCE(sat) fT Cob IC=150mA, IB=15mA VCE=20V, IC=20mA VCB=10V, IE=0, f=1MHz KST-9061-001 2 STN2222 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC-VBE 10V Fig. 3 IC-VCE Fig. 4 VCE(sat)-IC Fig. 6 hFE-IC Fig. 5 hFE-IC 10V KST-9061-001 3