PN2907A Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with PN2222A Ordering Information Type NO. Marking Package Code PN2907A PN2907A TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9009-000 1 PN2907A Ta=25°°C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -60 V Collector-Emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V Collector current IC -600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range Ta=25°°C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-10µA, IE=0 -60 - - V Collector-Emitter breakdown voltage BVCEO IC=-10mA, IB=0 -60 - - V Emitter-Base breakdown voltage BVEBO IE=-10µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-60V, IE=0 - - -20 nA DC current gain hFE VCE=-10V, IC=-10mA 100 - - - Collector-Emitter saturation voltage Transition frequency VCE(sat) IC=-150mA, IB=-15mA - - -0.4 V fT VCE=-5.0V, IC=-20mA, f=100MHz 200 - - MHz - - 8 pF - - 45 ns - - 10 ns - - 40 ns - - 100 ns - - 80 ns - - 30 ns Collector output capacitance Cob Turn-on time ton Delay time td Rise time tr Turn-off time toff Storage time ts Fall time tf VCB=-10V, IE=0, f=1MHz VCC=-30Vdc,IC=-150mAdc, IB1=-15mAdc VCC=-6.0Vdc,IC=-150mAdc, IB1=IB2=-15mAdc KST-9009-000 2 PN2907A Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC Fig. 4 Cob-VCB KST-9009-000 3