SHC ® SHC615 615 SHC 615 Wide-Bandwidth, DC RESTORATION CIRCUIT FEATURES APPLICATIONS ● PROPAGATION DELAY: 2.2ns ● BROADCAST/HDTV EQUIPMENT ● BANDWIDTH: OTA: 750MHz Comparator: 280MHz ● TELECOMMUNICATIONS EQUIPMENT ● LOW INPUT BIAS CURRENT: –0.3µA ● CAD MONITORS/CCD IMAGE PROCESSING ● HIGH-SPEED DATA ACQUISITION ● SAMPLE/HOLD SWITCHING TRANSIENTS: +1/–7mV ● NANO SECOND PULSE INTEGRATOR/ PEAK DETECTORS ● SAMPLE/HOLD FEEDTHROUGH REJECTION: 100dB ● PULSE CODE MODULATOR/ DEMODULATOR ● COMPLETE VIDEO DC LEVEL RESTORATION ● CHARGE INJECTION: 40fC ● HOLD COMMAND DELAY TIME: 3.8ns ● TTL/CMOS HOLD CONTROL ● SAMPLE/HOLD AMPLIFIER DESCRIPTION The SHC615 is a complete subsystem for very fast and precise DC restoration, offset clamping, and low frequency hum suppression of wideband amplifiers or buffers. Designed to stabilize the performance of video signals, it can also be used as a sample/hold amplifier, high-speed integrator, or peak detector for nanosecond pulses. A wideband Operational Transconductance Amplifier (OTA) with a high-impedance cascode current source output and fast sampling comparator set a new standard for high-speed applications. Both can be used as stand-alone circuits or combined to form a more complex signal processing stage. The self-biased, bipolar OTA can be viewed as an ideal voltage-controlled current source and is Ground 9 optimized for low input bias current. The sampling comparator has two identical high-impedance inputs and a current source output optimized for low output bias current and offset voltage; it can be controlled by a TTL-compatible switching stage within a few nanoseconds. The transconductance of the OTA and sampling comparator can be adjusted by an external resistor, allowing bandwidth, quiescent current, and gain tradeoffs to be optimized. The SHC615 is available in SO-14 surface mount and 14-pin plastic DIPs, and is specified over the extended temperature range of –40°C to +85°C. CHOLD Base 4 3 2 Hold Control 7 S/H 10 In+ S/H 11 In– Switching Stage Emitter OTA 12 Sampling Comparator (SC) SOTA ∞ Biasing 1 Collector (IOUT) IQ Adjust SHC615 13 +VCC 5 –VCC International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 ©1994 Burr-Brown Corporation PDS-1214C Printed in the U.S.A. May, 1995 DC SPECIFICATIONS At VCC = ±5V, RLOAD = 100Ω, RQ = 300Ω, RIN = 150Ω and TA = +25°C, unless otherwise specified. SHC615AP, AU PARAMETER CONDITIONS MIN TYP MAX UNITS ±40 50 8 40 55 mV µV/°C dB –0.3 1 ±0.9 µA nA/°C –77 +100 OTA OFFSET VOLTAGE, VE at VB = 0 Initial vs Temperature vs Supply (tracking) VCC = ±4.5V to ±5.5V B-INPUT BIAS CURRENT Initial vs Temperature C-OUTPUT BIAS CURRENT, IC at VB = 0 Initial –200 B-INPUT IMPEDANCE INPUT NOISE Voltage Noise Density, B-to-E Voltage Noise Density, B-to-C fOUT = 100kHz to 100MHz fOUT = 100kHz to 100MHz INPUT VOLTAGE RANGE OUTPUT Output Voltage Compliance C-Current Output E-Current Output C-Output Impedance E-Output Impedance Open-Loop Gain TRANSCONDUCTANCE ±18 ±18 Small Signal, <200mV µA 4.4 MΩ 2.2 4.5 nV/√Hz nV/√Hz ±3.4 V ±3.2 ±20 ±20 0.5 12 96 V mA mA MΩ Ω dB 70 mA/V The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. ® SHC615 2 DC SPECIFICATIONS (CONT) At VCC = ±5V, RLOAD = 1kΩ, RQ = 300Ω, and TA = +25°C, unless otherwise specified. SHC615AP, AU PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT BIAS CURRENT Initial vs Temperature 1.0 –2.3 ±5 µA nA/°C C-OUTPUT BIAS CURRENT Initial vs Temperature ±10 ±13 ±50 µA nA/°C INPUT IMPEDANCE Input Impedance 0.2 MΩ 5 nV/√Hz ±3.0 ±3.2 V V ±3.5 ±3.2 620 || 2 83 V mA kΩ || pF dB 22 mA/V COMPARATOR INPUT NOISE Voltage Noise Density fOUT = 100kHz to 100MHz INPUT VOLTAGE RANGE Input Voltage Range Common-Mode Input Range OUTPUT Output Voltage Compliance C-Current Output C-Output Impedance Open-Loop Gain ±2.5 TRANSCONDUCTANCE Transconductance HOLD CONTROL Logic 1 Voltage Logic 0 Voltage Logic 1 Current Logic 0 Current TRANSFER CHARACTERISTICS Charge Injection Feedthrough Rejection +2 0 +VCC +0.6 0.8 V Hold Control = 5.0V V Hold Control = 0.8V 1 0.05 V V µA µA Track-To-Hold Hold Mode 40 –100 fC dB COMPLETE SHC615 POWER SUPPLY Rated Voltage Derated Performance Quiescent Current Quiescent Current Range ±4.5 ±12 RQ = 300Ω Programmable (Useful Range) TEMPERATURE RANGE Operating Storage –40 –40 ±5 ±15 ±3 to ±36 ±5.5 ±18 V V mA mA +85 +125 °C °C ® 3 SHC615 AC SPECIFICATIONS At VCC = ±5V, RLOAD = 100Ω, RSOURCE = 50Ω, RQ = 300Ω, and TA = +25°C, unless otherwise specified. SHC615AP, AU PARAMETER CONDITIONS MIN TYP MAX UNITS FREQUENCY DOMAIN OTA LARGE-SIGNAL BANDWIDTH (–3dB), (B-to-E) SMALL-SIGNAL BANDWIDTH B-TO-E DIFFERENTIAL GAIN (B-TO-E) DIFFERENTIAL PHASE (B-to-E) HARMONIC DISTORTION (B-TO-E) Second Harmonic Third Harmonic LARGE SIGNAL BANDWIDTH (–3dB), (B-to-C) SMALL SIGNAL BANDWIDTH B-to-C VOUT = 5.0Vp-p VOUT = 2.8Vp-p VOUT = 1.4Vp-p 430 540 620 MHz MHz MHz VOUT = 0.2Vp-p 520 MHz f = 4.43MHz, VOUT = 0.7Vp-p, RL = 150Ω RL = 500Ω 1.8 0.1 % % f = 4.43MHz, VOUT = 0.7Vp-p, RL = 150Ω RL = 500Ω 0.07 0.01 ° ° –50 –46 dBc dBc VOUT = 5.0Vp-p VOUT = 2.8Vp-p VOUT = 1.4Vp-p 250 580 750 MHz MHz MHz VOUT = 0.2Vp-p 680 MHz f = 30MHz, VOUT = 1.4Vp-p COMPARATOR Sample Mode BANDWIDTH (–3dB) IOUT = 4mAp-p IOUT = 2mAp-p IOUT = 1mAp-p 240 270 280 MHz MHz MHz 2Vp-p Step, 10% to 90% B-to-E B-to-C 1.1 1.2 ns ns 1800 1700 3300 3000 V/µs V/µs V/µs V/µs TIME DOMAIN OTA RISE TIME SLEW RATE 2Vp-p,B-to-E B-to-C 5Vp-p,B-to-E B-to-C COMPARATOR RISE TIME (Sample Mode) 10% to 90%, RL = 50Ω, IOUT = ±2mA CLOAD = 1pF 2.5 ns SLEW RATE (Sample Mode) 10% to 90%, RL = 50Ω, IOUT = ±2mA CLOAD = 1pF 0.95 mA/ns tPDH, VOD = 200mV tPDL, VOD = 200mV Sample-to-Hold Hold-to-Sample 2.2 2.15 3.8 3.0 ns ns ns ns DYNAMIC CHARACTERISTICS Propagation Delay Time Propagation Delay Time Delay Time ® SHC615 4 PIN CONFIGURATION BLOCK DIAGRAM Top View DIP, SO-14 Ground 9 IQ Adjust 1 Emitter, E 2 Base, B 3 • CHOLD Base 4 3 2 14 NC Hold Control 13 +VCC 7 12 IOUT, Collector, C SHC615 CHOLD 4 11 S/H In– –VCC 5 10 S/H In+ NC 6 9 Ground Hold Control 7 8 NC S/H 10 In+ S/H 11 In– OTA Sampling Comparator (SC) SOTA ∞ 5 –VCC Any integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. NOTE: (1) Inputs are internally diode-clamped to ±VCC. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published specifications. PACKAGE/ORDERING INFORMATION PACKAGE DRAWING TEMPERATURE NUMBER(1) RANGE 010 235 IQ Adjust ELECTROSTATIC DISCHARGE SENSITIVITY Power Supply Voltage (±VCC) .............................................................. ±6V Input Voltage(1) ........................................................................ ±VCC ±0.7V Operating Temperature .................................................... –40°C to +85°C Storage Temperature ...................................................... –40°C to +125°C Junction Temperature .................................................................... +150°C Lead Temperature (soldering, 10s) ............................................... +300°C Hold Control .............................................................. –0.5V to +VCC +0.7V SHC615AP Plastic 14-Pin DIP SHC615AU SO 14-Lead Surface-Mount 1 SHC615 13 ABSOLUTE MAXIMUM RATINGS PACKAGE 12 Collector (IOUT) Biasing +VCC PRODUCT Emitter Switching Stage –40°C to +85°C –40°C to +85°C NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. ® 5 SHC615 TYPICAL PERFORMANCE CURVES At RQ = 300Ω, TA = +25°C, VCC = ±5V, unless otherwise noted. TOTAL QUIESCENT CURRENT vs TEMPERATURE SHC615 TOTAL QUIESCENT CURRENT vs RQ Total Quiescent Current, IQ (Normalized) Total Quiescent Current, IQ (mA) 100 10 1 10 100 1000 1.50 1.40 1.30 1.20 1.10 1.00 0.90 0.80 0.70 0.60 0.50 –25 10000 0 25 50 75 100 Temperature (C°) RQ (Ω) OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA B-INPUT BIAS CURRENT vs TEMPERATURE OTA-B INPUT OFFSET VOLTAGE vs TEMPERATURE 12 –0.1 OTA-B Input Offset Voltage (mV) OTA-B Input Bias Current (µA) 0.0 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 25 50 75 6 4 2 100 25 50 75 Temperature (C°) Temperature (C°) OTA-B INPUT RESISTANCE vs TOTAL QUIESCENT CURRENT OTA-E OUTPUT RESISTANCE vs TOTAL QUIESCENT CURRENT 18 45 16 40 OTA-E Output Resistance (Ω) OTA-B Input Resistance (MΩ) 0 8 RE = 100Ω 0 –25 0 –1.0 –25 10 14 12 10 8 6 4 2 100 35 30 25 20 15 10 5 0 0 5 10 15 20 25 30 35 4 40 ® SHC615 9 14 19 24 29 Total Quiescent Current, IQ (mA) Total Quiescent Current, IQ (mA) 6 34 39 TYPICAL PERFORMANCE CURVES (CONT) At RQ = 300Ω, TA = +25°C, VCC = ±5V, unless otherwise noted. OTA-C OUTPUT BIAS CURRENT vs TEMPERATURE 1.8 –60 1.6 –65 OTA-C Output Bias Current (µA) OTA-C Output Resistance (MΩ) OTA-C OUTPUT RESISTANCE vs TOTAL QUIESCENT CURRENT 1.4 1.2 1 0.8 0.6 0.4 0.2 0 5 10 15 20 25 30 35 –70 –75 –80 –85 –90 –95 –100 –40 40 –20 0 OTA TRANSFER CHARACTERISTICS vs INPUT VOLTAGE OTA-C Output Current (mA) 20 IQ = ±14mA 15 OTA VIN 5 100Ω RC –5 80 100 IQ = ±25mA 20 IQ = ±5mA 100Ω RE 0 60 OTA TRANSFER CHARACTERISTIC vs INPUT VOLTAGE VOUT 150Ω 10 40 25 IQ = ±25mA OTA-C Output Current (mA) 25 20 Temperature (°C) Total Quiescent Current, IQ (mA) –10 –15 15 IQ = ±14mA 10 5 IQ = ±5mA 0 –5 –10 VOUT 150Ω –15 OTA VIN –20 –20 –25 –3.5 –3 –2.5 –2 –1.5 –1 –0.5 0 0.5 1 1.5 2 2.5 3 3.5 –25 –0.2 –0.15 –0.1 OTA-B Input Voltage (V) –0.05 0 0.05 100Ω RC 0.1 0.15 0.2 OTA-B Input Voltage (V) OTA TRANSCONDUCTANCE vs TOTAL QUIESCENT CURRENT OTA-TRANSCONDUCTANCE vs FREQUENCY 100 100 80 Transconductance (mA/V) Transconductance (mA/V) 90 70 60 50 40 Small Signal (<200mV) 30 20 80 IQ = ±25mA IQ = ±5mA 60 IQ = ±14mA 40 20 Large Signal (>200mV) 10 0 0 0 ±5 ±10 ±15 ±20 ±25 ±30 1.0 Total Quiescent Current, IQ (mA) 10k 100k 1M 10M 100M 1G Frequency (Hz) ® 7 SHC615 TYPICAL PERFORMANCE CURVES (CONT) At RQ = 300Ω, TA = +25°C, VCC = ±5V, unless otherwise noted. OTA-E FREQUENCY RESPONSE 20 5Vp-p 2.8Vp-p 40 10 35 1.4Vp-p 30 Gain (dB) OTA-E Voltage Noise Density (nV/√Hz) OTA-E VOLTAGE NOISE SPECTRAL DENSITY 45 25 20 0.6Vp-p 0 0.2Vp-p –10 15 12 10 VIN –20 2.2nV/√Hz 150Ω 3 OTA 50Ω 5 –30 300k 0 100 1k 10k 100k 2 1M 10M 100 2 50 0 –50 RIN = 150Ω, RL = 100Ω, VIN = 200mVp-p, tRISE = tFALL = 1.5ns (Generator) 0 20 40 60 1 0 –1 –2 RIN = 150Ω, RL = 100Ω, VIN = 4Vp-p, tRISE = tFALL = 1.5ns (Generator) –3 80 100 0 20 40 Time (ns) 60 80 100 Time (ns) OTA-C FREQUENCY RESPONSE OTA-C VOLTAGE NOISE SPECTRAL DENSITY 20 90 5Vp-p 2.8Vp-p 80 10 1.4Vp-p 70 0 60 Gain (dB) OTA-C Voltage Noise Density (nV/√Hz) 1G OTA-E LARGE SIGNAL PULSE RESPONSE 3 OTA-E Output Voltage (V) OTA-E Output Voltage (mV) OTA-E SMALL SIGNAL PULSE RESPONSE 150 –150 100M Frequency (Hz) Frequency (Hz) –100 VOUT 50 40 20 4.5nV/√Hz 0.2Vp-p –10 VOUT 12 –20 30 0.6Vp-p –30 150Ω VIN 50Ω 10 –40 300k 0 100 1k 10k 100k OTA 2 100Ω 10M Frequency (Hz) Frequency (Hz) ® SHC615 1M 100Ω 3 8 100M 1G TYPICAL PERFORMANCE CURVES (CONT) At RQ = 300Ω, TA = +25°C, VCC = ±5V, unless otherwise noted. OTA-C LARGE SIGNAL PULSE RESPONSE 3 100 2 OTA-C Output Voltage (V) OTA-C Output Voltage (mV) OTA-C SMALL SIGNAL PULSE RESPONSE 150 50 0 –50 –100 RIN = 150Ω, RE = 100Ω, R C = 100Ω, VIN = 200mVp-p, tRISE = tFALL = 1.5ns (Generator) 1 0 –1 –2 RIN = 150Ω, RE = 100Ω, R C = 100Ω, VIN = 4Vp-p, tRISE = tFALL = 1.5ns (Generator) –3 –150 0 20 40 60 80 100 0 20 40 80 100 OTA-C HARMONIC DISTORTION vs FREQUENCY OTA-E HARMONIC DISTORTION vs FREQUENCY –45 0 RE = 100Ω OTA-C Harmonic Distortion (dBc) OTA-E Harmonic Distortion (dBc) 60 Time (ns) Time (ns) –46 –47 –48 –49 2f –50 –51 3f –52 –53 VOUT = 1.4Vp RE = RC = 100Ω –5 –10 –15 –20 –25 –30 2f –35 –40 3f –45 –50 1M 10M 100M 1M 10M 100M Frequency (Hz) Frequency (Hz) SAMPLING COMPARATOR OUTPUT BIAS CURRENT vs TEMPERATURE INPUT BIAS CURRENT vs TEMPERATURE 20 1.4 S/H In+ 15 Output Bias Current (µA) Input Bias Current (µA) 1.2 1.0 0.8 S/H In– 0.6 0.4 0.2 0 –40 10 5 0 0 5 –10 –20 0 20 40 60 80 –40 100 –20 0 20 40 60 80 100 Temperature (°C) Temperature (C°) ® 9 SHC615 TYPICAL PERFORMANCE CURVES (CONT) At RQ = 300Ω, TA = +25°C, VCC = ±5V, unless otherwise noted. TRANSCONDUCTANCE vs TOTAL QUIESCENT CURRENT INPUT RESISTANCE vs TOTAL QUIESCENT CURRENT 0.7 40 Transconductance (mA/V) Input Resistance (MΩ) 0.6 0.5 0.4 0.3 0.2 30 20 10 0.1 0 5 10 15 20 25 30 35 0 40 0 5 10 Total Quiescent Current, IQ (mA) Comparator Transconductance (mA/V) Comparator Output Current (mA) IQ = ±25mA 4 IQ = ±14mA 2 IQ = ±5mA –2 –4 –6 –0.2 –0.15 –0.1 –0.05 0 0.05 0.1 25 0.15 50 IQ = ±25mA 40 30 IQ = ±14mA 20 10 IQ = ±5mA 0 –10 –0.2 0.2 –0.15 –0.1 –0.05 0 0.05 0.1 0.15 0.2 Input Voltage (V) Input Voltage (V) COMMON-MODE REJECTION vs FREQUENCY PROPAGATION DELAY vs TOTAL QUIESCENT CURRENT 0 4 –20 3.5 3 –40 Delay (ns) Common-Mode Rejection (dB) 20 TRANSCONDUCTANCE vs INPUT VOLTAGE TRANSFER CHARACTERISTICS 6 0 15 Total Quiescent Current, IQ (mA) –60 Pos 2.5 2 –80 1.5 –100 300k Neg 1 1M 10M 100M 1G 3 Frequency (Hz) 13 18 21 28 Total Quiescent Current, IQ (mA) ® SHC615 8 10 33 38 TYPICAL PERFORMANCE CURVES (CONT) At RQ = 300Ω, TA = +25°C, VCC = ±5V, unless otherwise noted. PROPAGATION DELAY TIME vs TEMPERATURE 3 2.5 2.8 Propagation Delay (ns) Propogation Delay (ns) PROPAGATION DELAY vs OVERDRIVE 3 Pos 2 1.5 Neg 1 VOD 0.5 100Ω 10 100Ω 11 SC 4 VOD VOD GND 2.6 2.4 Pos 2.2 Neg 2 1.8 0 0 200 400 600 800 100 1.6 –40 1200 –20 0 ∆ Input Voltage (mV) 40 60 80 100 120 Temperature (°C) PROPAGATION DELAY vs LOAD CAPACITANCE PROPAGATION DELAY vs SLEW RATE 4 40 Pos Pos 35 3.5 Propagation Delay (ns) Propagation Delay (ns) 20 30 25 Neg 20 10 15 10 11 SC 4 CLOAD 5 VIN = 1.2Vpp 3 Neg 2.5 2 +0.6V 1.5 VREF VOD = 1.2Vp-p –0.6V 0 1 0 100 200 300 400 500 600 700 800 900 1000 (0) Capacitive Load, CL (pF) COMPARATOR RESPONSE TO A 2ns ANALOG INPUT PULSE COMPARATOR RESPONSE TO A 10ns ANALOG INPUT PULSE 150 150 100 100 IOUT = 4mAp-p RL = 50Ω 50 Output Voltage (mV) Output Voltage (mV) 500 250 160 120 96 80 68 60 53 48 (2) (4) (6) (8) (10) (12) (14) (16) (18) (20) Slew Rate (V/µs) (Rise Time (ns)) 0 –50 –100 IOUT = 4mAp-p RL = 50Ω 50 0 –50 –100 –150 –150 0 20 40 60 80 100 0 Time (ns) 20 40 60 80 100 Time (ns) ® 11 SHC615 TYPICAL PERFORMANCE CURVES (CONT) At RQ = 300Ω, TA = +25°C, VCC = ±5V, unless otherwise noted. SWITCHING TRANSIENTS TEST CIRCUITS SWITCHING TRANSIENTS Switching Transients (mV) 5 CD74HCT 100Ω 150Ω TTL Off-On On-Off 0 100Ω Comparator –5 200Ω 200Ω –10 4 50Ω 10 SC 50Ω 7 11 TTL –15 0 20 40 60 80 100 Time (ns) FEEDTHROUGH REJECTION vs FREQUENCY (Off-Isolation) BANDWIDTH vs OUTPUT CURRENT SWING 0 0 ±1mA –10 –40 Gain (dB) –60 ±0.5mA –20 100Ω VIN –80 7 10 50Ω –30 SC 4 VOUT 11 –100 50Ω 100Ω –120 300k 1M 10M 100M –40 100k 1G 1M 10M 100M Frequency (Hz) Frequency (Hz) SLEW RATE vs TOTAL QUIESCENT CURRENT HOLD COMMAND DELAY TIME 1G 4 2 3 0 2.5 Output Voltage (mV) Slew Rate (mA/ns) 3.5 2 Pos 1.5 1 Neg 0.5 100 IOUT = 2mA 0 IOUT = –2mA –100 0 0 5 10 15 20 25 30 35 0 40 ® SHC615 10 20 30 Time (ns) Total Quiescent Current, IQ (mA) 12 40 50 Hold Command (V) Feedthrough Rejection (dB) ±2mA –20 DISCUSSION OF PERFORMANCE output (emitter), and the high-impedance current output (collector). The OTA consists of a complementary buffer amplifier and a subsequent complementary current mirror. The buffer amplifier features a Darlington output stage and the current mirror has a cascoded output. The addition of this cascode circuitry increases the current source output resistance to 1MΩ and the open-loop gain to typically 96dB. Both features improve the OTAs linearity and drive capabilities. Any bipolar input voltage at the high impedance base has the same polarity and signal level at the low impedance buffer or emitter output. For the open-loop diagrams the emitter is connected to GND and then the collector current is determined by the product voltage between base and emitter times the transconductance. In application circuits (Figure 2b.), a resistor RE between emitter and GND is used to set the OTA transfer characteristics. The following formulas describe the most important relationships. rE is the output impedance of the buffer amplifier (emitter) or the reciprocal of the OTA transconductance. Above ±5mA, collector current, IC, will be slightly less than indicated by the formula. The SHC615, which contains a wideband Operational Transconductance Amplifier and a fast sampling comparator, represents a complete subsystem for very fast and precise DC restoration, offset clamping and correction to GND or to an adjustable reference voltage, and low frequency hum suppression of wideband operational or buffer amplifiers. Although the IC was designed to improve or stabilize the performance of complex, wideband video signals, it can also be used as a sample and hold amplifier, high-speed integrator, peak detector for nanosecond pulses, or demodulator or modulator for pulse code transmission systems. A wideband Operational Transconductance Amplifier (OTA) with a highimpedance cascode current source output and a fast and precise sampling comparator set a new standard for highspeed sampling applications. Both can be used as stand-alone circuits or combined to create more complex signal processing stages like sample and hold amplifiers. The SHC615 simplifies the design of input amplifiers with high hum suppression, clamping or DC-restoration stages in professional broadcast equipment, high-resolution CAD monitors and information terminals, signal processing stages for the energy and peak value of small and fast nanoseconds pulses, and eases the design of high-speed data acquisition systems behind a CCD sensor or in front of an analog-to-digital converter. IC = V IN rE + RE RE = V IN – rE IC The RE resistor may be bypassed by a relatively large capacitor to maintain high AC gain. The parallel combination of RE and this large capacitor form a high pass filter enhancing the high frequency gain. Other cases may require a RC compensation network parallel to RE to optimize the high-frequency response. The full power bandwidth measured at the emitter achieves 620MHz. The frequency response of the collector is directly related to the resistor’s value between collector and GND; it decreases with increasing resistor values, because it forms a low-pass network with the OTA C-output capacitance. An external resistor, RQ, allows the user to set the quiescent current. RQ is connected from Pin 1 (IQ adjust) to –VCC. It determines the operating currents of both the OTA and comparator sections and controls the bandwidth and AC behavior as well as the transconductance of both sections. Besides the quiescent current setting feature, the Proportional-to-Absolute-Temperature (PTAT) supply increases the quiescent current vs temperature and keeps it constant over a wide range of input voltages. This variation holds the transconductance gm of the OTA and comparator relatively constant vs temperature. The circuit parameters listed in the specification table are measured with RQ set to 300Ω, giving a nominal quiescent current at ±15mA. The circuit can be totally switched-off with a current flowing into Pin 1. Figure 1 shows a simplified block and circuit diagram of the SHC615 OTA. Both the emitter and the collector outputs offer a drive capability of ±20mA for driving low impedance lines or inputs. Connecting the collector to the emitter in a direct-feedback buffer configuration increases the drive capability to ±40mA. The emitter output is not current-limited or protected. Momentary shorts to GND should be avoided, but are unlikely to cause permanent damage. While the OTA’s function and labeling looks similar to that of transistors, it offers essential distinctive differences and improvements: 1) The collector current flows out of the C terminal for a positive B-to-E input voltage and into it for negative voltages; 2) A common emitter amplifier operates in non-inverting mode while the common base operates in inverting mode; 3) The OTA is far more linear than a bipolar transistor; 4) The transconductance can be adjusted with an external resistor; 5) Due to the PTAT biasing characteristic the quiescent current increases as shown in the typical performance curve vs temperature and keeps the AC performance constant; 6) The OTA is self-biased and bipolar; and, 7) The output current is zero for zero differential input voltages. AC inputs centered at zero produce an output current centered at zero. OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA) SECTION AND OVERVIEW The symbol for the OTA section is similar to that of a bipolar transistor, and the self-based OTA can be viewed as a quasi-ideal transistor or as a voltage-controlled current source. Application circuits for the OTA look and operate much like transistor circuits—the bipolar transistor, also, is a voltage-controlled current source. Like a transistor, it has three terminals: a high-impedance input (base) optimized for a low input bias current of 0.3µA, a low-impedance input/ ® 13 SHC615 +VCC (13) +VCC (13) Biasing Biasing B (3) +1 E (2) C (12) E (2) C (12) B (3) Biasing Biasing +VCC (5) –VCC (5) (a) (b) FIGURE 1. a) Simplified Block; and, b) Circuit Diagram of the OTA Section. V+ RB RL VO Inverting Gain VOS ≈ several volts VI RB 100Ω VI VO 12 C 3 B OTA RL Non-InvertingGain VOS ≈ 0 E 2 RE RE V– (b) Common-E Amplifier (a) Common Emitter Amplifier Transconductance varies over temperature. Transconductance remains constant over temperature. FIGURE 2. a) Common Emitter Amplifier Using a Discrete Transistor; b) Common-E Amplifier Using the OTA Portion of the SHC615. BASIC APPLICATIONS CIRCUITS a Common-E amplifier which is equivalent to a common emitter transistor amplifier. Input and output can be ground referenced without any biasing. Due to the sense of the output current, the amplifier is non-inverting. Most application circuits for the OTA section consist of a few basic types which are best understood by analogy to discrete transistor circuits. Just as the transistor has three basic operating modes—common emitter, common base, and common collector—the OTA has three equivalent operating modes common-E, common-B, and common-C (See Figures 2, 3 and 4). Figure 2 shows the OTA connected as Figure 4 shows the common-B amplifier. This configuration produces an inverting gain, and the input is low-impedance. When a high impedance input is needed, it can be created by inserting a buffer amplifier like BUF600 in series. ® SHC615 14 V+ 12 C V+ 100Ω VI 3 B G=– OTA RL G≈1 VOS ≈ 0 Non-Inverting Gain VOS ≈ several volts VO VO G≈1 VOS ≈ 0.7V RE V– (a) Common Collector Amplifier (Emitter Follower) 100Ω (b) Common-C Amplifier (Buffer) 1 1+ RO = 1 gm • R E ≈– 12 C RE G= 1 gm RL RE VO E 2 VI RL RE + 3 B RE E 2 VI ≈1 OTA VO Inverting Gain VOS ≈ 0 RL (a) Common-Base Amplifier 1 gm RE VI (b) Common-B Amplifier FIGURE 3. a) Common Collector Amplifier Using a Discrete Transistor; b) Common-C Amplifier Using the OTA Portion of the SHC615. FIGURE 4. a) Common Base Amplifier Using a Discrete Transistor; b) Common-B Amplifier Using the OTA Portion of the SHC615. SAMPLING COMPARATOR The SHC615 sampling comparator features a very short 2.2ns propagation delay and utilizes a new switching circuit architecture to achieve excellent speed and precision. The additional offset voltage or switching transient induced on a capacitor at the current source output by the switching charge can be determined by the following formula: Offset(V) = It provides high impedance inverting and non-inverting inputs, a high-impedance current source output and a TTLCMOS-compatible Hold Control Input. Charge(pC) C H Total(pF) The switching stage input is insensitive to the low slew rate performance of the hold control command and compatible with TTL/CMOS logic levels. With a TTL logic high, the comparator is active, comparing the two input voltages and varying the output current accordingly. With a TTL logic low, the comparator output is switched off. The sampling comparator consists of an operational transconductance amplifier (OTA), a buffer amplifier, and a subsequent switching circuit. The OTA and buffer amplifier are directly tied together at the buffer outputs to provide the two identical high-impedance inputs and high open-loop transconductance. Even a small differential input voltage multiplied with the high transconductance results in an output current—positive or negative—depending upon the input polarity. This is similar to the low or high status of a conventional comparator. The current source output features high output impedance, output bias compensation, and is optimized for charging a capacitor in DC restoration, nanosecond integrators, peak detectors and S/H circuits. The typical comparator output current is ±3.2mA and the output bias current is minimized to typically ±10µA in the sampling mode. APPLICATION INFORMATION The SHC615 operates from ±5V power supplies (±6V maximum). Do not attempt to operate with larger power supply voltages or permanent damage may occur. Inputs of the SHC615 are protected with internal diode clamps as shown in Figure 1. These protection diodes can safely conduct 10mA continuously (30mA peak). If input voltages can exceed the power supply voltages by 0.7V, the input signal current must be limited. This innovative circuit achieves the slew rate representatives of an open-loop design. In addition, the acquisition slew current for a hold or storage capacitor is higher than standard diode bridge and switch configurations, removing a main contributor to the limits of maximum sampling rate and input frequency. BASIC CONNECTIONS Figure 6 shows the basic connections required for operation. These connections are not shown in subsequent circuit diagrams. Power supply bypass capacitors should be located as close as possible to the device pins. Solid tantalum capacitors are generally best. See “Circuit Layout” at the end of the applications discussion for further suggestions on layout. The switching circuits in the SHC615 use current steering (versus voltage switching) to provide improved isolation between the switch and analog sections. This results in low aperture time sensitivity to the analog input signal, reduced power supply and analog switching noise. Sample-to-hold peak switching is 40fC. ® 15 SHC615 If the high speed TTL-hold command signal goes negative due to reflections for AC-coupling, the hold control input must be protected by an external reverse bias diode to ground as shown in Figure 6. plague high-speed components when they are used incorrectly. • Bypass power supplies very close to the device pins. Use tantalum chip capacitors (approximately 2.2µF); parallel 470pF and/or 10nF ceramic chip capacitors may be added if desired. Surface mount types are recommended because of their low lead inductance. Supply bypassing is extremely critical at high frequencies and when driving high current loads. CIRCUIT LAYOUT The high-frequency performance of the SHC615 can be greatly affected by the physical layout of the printed circuit board. The following tips are offered as suggestions, not as absolute requirements. Oscillations, ringing, poor bandwidth, poor settling, and peaking are all typical problems that • PC board traces for power lines should be wide to reduce impedance. +VCC (13) OTA Biasing CHOLD (4) In+ (10) Switching Stage Biasing Hold Control (7) GND TTL (9) –VCC (5) +VCC (13) Biasing Comparator In+ Switching Stage (10) (11) SOTA ∞ CHOLD (4) In– In– (11) Hold Control (7) –VCC (5) (a) BUFFER AMPLIFIER Biasing (b) FIGURE 5. a) Simplified Block Diagram; and, b) Circuit Diagram of the Sampling Comparator which Includes the Sampling Operational Transconductance Amplifier (SOTA) and the Switching Stage. ® SHC615 16 • Make short, low-inductance traces. The entire physical circuit should be as small as possible. • A resistor of 100 to 250Ω in series with the high-impedance inputs is recommended to reduce peaking. • Use a low-impedance ground plane on the component side to ensure that a low-impedance ground is available throughout the layout. • Plug-in prototype boards and wire-wrap boards will not function well. A clean layout using RF techniques is essential—there are no shortcuts. • Do not extend the ground plane under high-impedance nodes sensitive to stray capacitances such as the amplifier’s input terminals. • Terminate transmission line loads. Unterminated lines, such as box cables, can appear to the amplifier to be a capacitive or inductive load. By terminating a transmission line with its characteristic impedance, the amplifier’s load then appears purely resistive. • Sockets are not recommended since they add significant inductance and parasitic capacitance. If sockets are required, use zero-profile sockets. • Protect the hold control input with an external diode if necessary. • Use low-inductance, surface-mount components. Surfacemount components offer the best AC performance. RB (25Ω to 200Ω) CHOLD 9 GND 4 3 Base 2 (20Ω to 200Ω) Hold 7 Control Switching Stage Emitter OTA 12 Collector Sampling Comparator (SC) S/H In+ 10 Biasing SOTA 1 IQ Adjust S/H In– 11 RQ 13 +VCC +5V(1) + 2.2µF 10nF 470pF 5 RQ = 300Ω sets roughly IQ = ±14mA –VCC –5V(1) 470pF 10nF + 2.2µF Solid Tanatlum NOTE: (1) ±VCC = ±6V absolute max. FIGURE 6. Basic Connections ® 17 SHC615 TYPICAL APPLICATIONS HCL HCL 100Ω 10 7 4 G=+ R1 11 12 CHOLD 100Ω 100Ω 3 SC 4 SHC615 100Ω 10 7 SC R2 11 12 CHOLD OTA SHC615 100Ω 100Ω OTA 3 VOUT 2 VIN R1 VOUT 2 VIN R2 FIGURE 7. Complete DC Restoration System. FIGURE 8. DC Restoration of a Buffer Amplifier. CHOLD HCL 100Ω RE 7 Hold /Track 2 11 4 OTA 3 SHC615 100Ω VREF 100Ω SC 10 150Ω 12 VIN R1 R2 300Ω 300Ω 50Ω 10 11 SC 100Ω 4 3 CHOLD 100Ω VOUT OPA623 300Ω • Current Control VIN • Non-Inverting • DC Coupling FIGURE 10. Sample/Hold Amplifier. FIGURE 9. Clamped Video/RF Amplifier. ® SHC615 OTA 2 50Ω VOUT 300Ω 150Ω IOUT 12 SHC615 7 18 Hold Control Hold Control 150Ω VIN 10 100Ω 4 150Ω 27pF 2 VIN 50Ω VOUT 50Ω BUF600 12 10 11 7 SC 100Ω 4 OTA 3 27pF 620Ω 820Ω 11 100Ω • Black Level Control OTA 4 3 –1V 4 75Ω 75Ω OTA 3 CINT 75Ω 2 VOUT +5V SC • Gain 12 11 Video ADC SC 7 RE 100Ω 12 SHC615 100Ω 10 fIN HCL • Level Shifting +VOUT FIGURE 12. Fast Pulse Peak Detector. fREF 7 50Ω 300Ω FIGURE 11. Integrator for ns-Pulses. CHOLD 2 SHC615 1µF 2 –VOUT 8 27pF 100Ω OTA 3 11 +1 4 12 7 SC 50Ω 50Ω 100Ω IOUT SHC615 10 R2 R1 100Ω fIN ÷N 25Ω CCD Buffer Sample /Hold OPA621 fOUT VIN = 0 to –2V fREF fIN IOUT Timing Control VOUT VCO VOUT Phase fREF fOUT = fREF x N FIGURE 13. CCD Analog Front-End. FIGURE 14. Phase Detector For Fast PLL-Systems. ® 19 SHC615