High Speed MOSFET Drivers CORPORATION CLM4420 / CLM4429 FEATURES DESCRIPTION APPLICATIONS The CLM4420 and CLM4429 family operate over 4.5V to 18V, can withstand high current peaking of 6A and have matched rise and fall times under 25ns. The product has been designed utilizing Calogic’s rugged CMOS process with protection for latch up and ESD. The product is available in inverting (CLM4429) and noninverting (CLM4420) configurations. • Latch Up Protected . . . . . . . . . . . . . . . . . . . . . . . . . >1.5A • Logic Input Swing . . . . . . . . . . . . . . . . . . . . . Negative 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV • ESD • Matched Rise and Fall Times . . . . . . . . . . . . . . . . . . 20ns • Motor Controls • Switch-Mode Power Supplies Transformer Driver • Pulse • Class D Switching Amplifiers ORDERING INFORMATION Part# Logic Package CLM4420CP CLM4420EP CLM4420CY CLM4420EY CLM4429CP CLM4429EP CLM4429CY CLM4429EY Noninverting Noninverting Noninverting Noninverting Inverting Inverting Inverting Inverting 8-Pin PDIP 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin PDIP 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC Temperature Range 0oC to +70oC -40oC to +85oC 0oC to +70oC -40oC to +85oC 0oC to +70oC -40oC to +85oC 0oC to +70oC -40oC to +85oC FUNCTIONAL DIAGRAM AND PIN CONFIGURATIONS SOIC DIP VD D 1 8 VD D VD D 1 8 VD D INPUT 2 7 NC 3 6 OUTPUT INPUT 2 7 OUTPUT OUTPUT NC 3 6 OUTPUT GND 4 5 GND GND 4 5 GND 1A-07 1A-08 VDD 500µ 300mV OUTPUT CLM4420 / CLM4429 INPUT 4.7V GND EFFECTIVE INPUT C = 38pF 1L-13 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CLM4420 / CLM429 CORPORATION ABSOLUTE MAXIMUM RATINGS Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to >VDD Input Current (VIN > VDD). . . . . . . . . . . . . . . . . . . . . . . . 50mA Power Dissipation, TA ≤ 25oC PDIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derating Factors (To Ambient) PDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/oC SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/oC Storage Temperature Range . . . . . . . . . . . . -55oC to +150oC Operating Temperature (Chip). . . . . . . . . . . . . . . . . . . +150oC Operating Temperature Range (Ambient) C Version . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC E Version . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to +85oC Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300oC Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended-periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = +25oC with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. SYMBOL PARAMETER MIN TYP 2.4 1.8 MAX UNIT TEST CONDITIONS INPUT VIH Logic 1 High Input Voltage VIL Logic 0 Low Input Voltage VIN (Max) Input Voltage Range IIN Input Current 1.3 V 0.8 V -5 VDD+0.3 V -10 10 µA 0V ≤ VIN ≤ VDD V See Figure 1 0.025 V See Figure 1 OUTPUT VOH High Output Voltage VOL Low Output Voltage RO Output Resistance, High 2.1 2.8 Ω IOUT = 10mA, VDD = 18V RO Output Resistance, Low 1.5 2.5 Ω IOUT = 10mA, VDD = 18V IPK Peak Output Current A VDD = 18V (See Figure 5) IREV Latch-Up Protection Withstand Reverse Current A Duty Cycle ≤ 2% t ≤ 300µA VDD-0.025 6 >1.5 SWITCHING TIME (Note 1) tR Rise Time 25 35 ns Figure 1, CL = 2500pF tF Fall Time 25 35 ns Figure 1, CL = 2500pF tD1 Delay Time 20 40 ns Figure 1 tD2 Delay Time 20 40 ns Figure 1 1 55 1.5 150 mA µA VIN = 3V VIN = 0V 18 V POWER SUPPLY IS Power Supply Current VDD Operating Input Voltage 4.5 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CLM4420 / CLM4429 CORPORATION ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONS INPUT VIH Logic 1 High Input Voltage VIL Logic 0 Low Input Voltage VIN (Max) Input Voltage Range IIN Input Current 2.4 V 0.8 V -5 VDD+0.3 V -10 10 µA 0V ≤ VIN ≤ VS V See Figure 1 0.025 V See Figure 1 OUTPUT VOH High Output Voltage VOL Low Output Voltage RO Output Resistance, High 3 5 Ω IOUT = 10mA, VDD = 18V RO Output Resistance, Low 2.3 5 Ω IOUT = 10mA, VDD = 18V VDD-0.025 SWITCHING TIME (Note 1) tR Rise Time 32 60 ns Figure 1, CL = 2500pF tF Fall Time 34 60 ns Figure 1, CL = 2500pF tD1 Delay Time 20 50 ns Figure 1 tD2 Delay Time 20 50 ns Figure 1 1 60 3 400 mA µA VIN = 3V VIN = 0V 18 V POWER SUPPLY IS Power Supply Current VDD Operating Input Voltage 4.5 Note: 1. Switching times guaranteed by design. FIGURE 1. SWITCHING TIME TEST CIRCUIT V DD = 18V +5V 90% 0.1µF INPUT 1 8 ≈0.4V 0.1µF 0.1µF 10% t D1 tF t D2 tR +18V INPUT 2 6 90% 90% OUTPUT OUTPUT 7 C L = 2500pF 4 5 0V 10% INPUT: 100kHz, SQUARE WAVE, t RISE = t FALL ≤ 10nS 10% 1A-10 1A-09 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CLM4420 / CLM4429 CORPORATION TYPICAL CHARACTERISTICS CURVES RISE TIME vs SUPPLY VOLTAGE FALL TIME vs SUPPLY VOLTAGE 120 100 100 80 CL = 10,000 pF CL = 10,000 pF TIME (ns) TIME (ns) 80 60 C L = 4700 pF 60 CL = 4700 pF 40 40 CL = 2200 pF C L = 2200 pF 20 20 0 0 5 7 9 11 13 VDD (V) 15 5 7 11 13 15 VDD (V) 1L-14 RISE AND FALL TIMES vs TEMPERATURE 50 9 1L-15 RISE TIME vs CAPACITIVE LOAD 100 CL = 2200pF VDD = 18V 80 40 60 TIME (ns) TIME (ns) VDD = 5V t FALL 30 t RISE 20 40 VDD = 12V 20 VDD = 18V 10 0 -60 -20 20 60 100 TA (˚C) 10 1000 140 10,000 CAPACITVE LOAD (pF) 1L-16 1L-17 PROPAGATION DELAY TIME vs SUPPLY VOLTAGE FALL TIME vs CAPACITIVE LOAD 65 100 80 60 DELAY TIME (ns) TIME (ns) 60 VDD = 5V 40 VDD = 12V 20 VDD = 18V 55 t D2 50 45 t D1 40 10 1000 35 10,000 CAPACITVE LOAD (pF) 1L-18 4 6 8 10 12 14 SUPPLY VOLTAGE (V) 16 18 1A-16 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CLM4420 / CLM4429 CORPORATION TYPICAL CHARACTERISTICS CURVES (Cont.) PROPAGATION DELAY TIME vs TEMPERATURE 50 SUPPLY CURRENT vs CAPACITY LOAD 84 SUPPLY CURRENT (mA) C L = 2200pF VDD = 18V DELAY TIME (ns) 40 t D2 30 t D1 20 10 VDD = 15V 70 56 42 500kHz 28 200kHz 14 20kHz 0 -60 0 -20 20 60 140 100 TA (˚C) 0 10,000 1A-18 THERMAL DERATING CURVE 1600 C L = 2200pF 10V 100 8 DIP 8 SOIC 8 CerDIP 1400 18V MAX. POWER (mW) SUPPLY CURRENT (mA) 1000 CAPACITIVE LOAD (pF) 1A-17 SUPPLY CURRENT vs FREQUENCY 1000 100 5V 10 1200 1000 800 600 400 200 0 0 0 100 1000 0 10,000 FREQUENCY (kHz) 20 40 60 80 100 120 AMBIENT TEMPERATURE (˚C) 1A-19 LOW-STATE OUTPUT RESISTANCE 1L-19 HIGH-STATE OUTPUT RESISTANCE 2.5 5 50mA 100mA 100mA 4 50mA 1.5 10mA R OUT (Ω) R OUT (Ω) 2 3 10mA 1 2 5 7 9 11 VDD (V) 13 15 1A-23 5 7 9 11 VDD (V) 13 15 1A-22 CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025 CLM4420 / CLM4429 CORPORATION TYPICAL CHARACTERISTICS CURVES (Cont.) EFFECT OF INPUT AMPLITUDE ON PROPAGATION DELAY 200 TOTAL nA•S CROSSOVER* 4 CROSSOVER AREA (A•S) × 10 -9 LOAD = 2200pF DELAY TIME (ns) 160 120 INPUT 2.4V INPUT 3V 80 INPUT 5V 40 INPUT 8V AND 10V 0 5 6 7 8 2 1 0 9 10 11 12 13 14 15 VDD (V) 3 5 6 7 1A-24 8 9 10 11 12 13 14 15 SUPPLY VOLTAGE (V) * The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. IN V DD 1A-25 V DD OUT OUT GND GND GND DIE SIZE X 77 (mm) DIE SIZE 76 76 X 77 (INCHES) CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025