1 TC1410 TC1410N 0.5A HIGH-SPEED MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ The TC1410/1410N are 0.5V CMOS buffer/drivers . They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1410/1410N can easily switch 500pF gate capacitance in 25nsec with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Latch-Up Protected: Will Withstand 500mA Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .....................................................4kV High Peak Output Current ............................... 0.5A Wide Operating Range .......................... 4.5V to 16V High Capacitive Load Drive Capability ............................ 500pF in 25nsec Short Delay Time .................................. 35nsec Typ Consistent Delay Times With Changes in Supply Voltage Matched Delay Times Low Supply Current — With Logic “1” Input ................................. 500µA — With Logic “0” Input ................................. 150µA Low Output Impedance ..................................... 16Ω Pinout Same as TC1411/12/13 PIN CONFIGURATIONS VDD 1 8 VDD IN 2 TC1410 NC 3 GND 4 2 VDD 1 7 OUT IN 2 6 OUT NC 3 5 GND GND 4 6, 7 INVERTING 8 VDD 7 OUT TC1410N 6 OUT 5 GND 2 6, 7 NONINVERTING NC = NO INTERNAL CONNECTION 3 4 ORDERING INFORMATION Part No. Package Temp. Range TC1410COA TC1410CPA TC1410EOA TC1410EPA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C TC1410NCOA TC1410NCPA TC1410NEOA TC1410NEPA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C 5 6 NOTE: SOIC pinout is identical to DIP. FUNCTIONAL BLOCK DIAGRAM TC1410 VDD INVERTING OUTPUTS 7 300mV OUTPUT NONINVERTING OUTPUTS INPUT 4.7V TC1410N GND 8 EFFECTIVE INPUT C = 10pF TC1410/N-8 10/15/96 TELCOM SEMICONDUCTOR, INC. 4-183 0.5A HIGH-SPEED MOSFET DRIVERS TC1410 TC1410N ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C Power Dissipation (TA ≤ 70°C) Plastic DIP ...................................................... 730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless otherwise specified. Typical values are measured at TA=25°C; VDD =16V. Symbol Parameter Test Conditions Min Typ Max Unit – 5V ≤ VIN ≤ VDD – 40°C ≤ TA ≤ 85°C TA = 25°C 2.0 — –1 – 10 — — — — — 0.8 1 10 V V µA VDD – 0.025 — — — — — — 0.5 — — 16 20 20 0.5 — V 0.025 22 28 28 — — TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C — — — — — — — — — — — — 25 27 29 25 27 29 30 33 35 30 33 35 35 40 40 35 40 40 40 45 45 40 45 45 VDD = 16V — — 0.5 0.1 1.0 0.15 Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance DC Test DC Test VDD = 16V, IO = 10mA IPK IREV Peak Output Current Latch-Up Protection Withstand Reverse Current VDD = 16V Duty Cycle ≤ 2% t ≤ 300 µsec TA=25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C VDD = 16V V Ω A A Switching Time (Note 1) tR Rise Time Figure 1 tF Fall Time Figure 1 tD1 Delay Time Figure 1 tD2 Delay Time Figure 1 nsec nsec nsec nsec Power Supply IS Power Supply Current VIN = 3V VIN = 0V mA NOTE: 1. Switching times are guaranteed by design. 4-184 TELCOM SEMICONDUCTOR, INC. 0.5A HIGH-SPEED MOSFET DRIVERS 1 TC1410 TC1410N +5V 2 90% INPUT 10% 0V VDD = 16V VDD 0.1µF 4.7µF tD1 tD2 tF tR 90% 90% 3 OUTPUT 1,8 INPUT 2 10% 0V 6,7 10% OUTPUT Inverting Driver TC1410 CL = 500pF TC1410 TC1410N +5V 4 90% INPUT 4,5 10% 0V VDD INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10ns tD1 90% tR OUTPUT 10% 0V 90% tD2 tF 10% 5 Noninverting Driver TC1410N Figure 1. Switching Time Test Circuit 6 Thermal Derating Curves 1600 MAX. POWER (mV) 1400 8 Pin DIP 1200 8 Pin CerDIP 1000 7 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (°C) 8 TELCOM SEMICONDUCTOR, INC. 4-185 0.5A HIGH-SPEED MOSFET DRIVERS TC1410 TC1410N TYPICAL CHARACTERISTICS Quiescent Supply Current vs. Supply Voltage Quiescent Supply Current vs. Temperature TA = 25°C VSUPPLY = 16V 500 500 400 400 VIN = 3V ISUPPLY (µA) ISUPPLY (µA) VIN = 3V 300 200 100 0 6 8 10 12 14 200 100 VIN = 0V 4 300 0 16 VIN = 0V -40 -20 0 VDD (VOLTS) Input Threshold vs. Supply Voltage TA = 25°C VTHRESHOLD (VOLTS) VTHRESHOLD (VOLTS) VIH 1.4 1.3 VIL 1.2 4 6 8 10 12 14 60 80 1.5 VIH 1.4 1.3 1.1 16 VIL 1.2 -40 -20 0 11 11 9 9 A =8 5°C TA = 5 25°C TA = – 3 4 6 Rds (ON) W 13 T 8 40°C 10 VDD (VOLTS) 40 Low-State Output Resistance 13 7 20 TEMPERATURE (°C) High-State Output Resistance Rds (ON) W 80 VSUPPLY = 16V VDD (VOLTS) 4-186 60 1.6 1.5 1 40 Input Threshold vs. Temperature 1.6 1.1 20 TEMPERATURE (°C) 7 T A 5 =8 5°C TA = 2 5°C 3 12 14 16 1 TA = – 40°C 4 6 8 10 12 14 16 VDD (VOLTS) TELCOM SEMICONDUCTOR, INC. 0.5A HIGH-SPEED MOSFET DRIVERS 1 TC1410 TC1410N Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage CLOAD = 500pF CLOAD = 500pF 100 100 80 80 60 TA = 85°C TA = 25°C 40 20 0 TFALL (nsec) TRISE (nsec) TYPICAL CHARACTERISTICS (Cont.) 6 8 10 TA = 85°C 40 TA = 25°C TA = –40°C 12 14 0 16 4 6 8 VDD (VOLTS) 80 80 TA = 85°C TA = 25°C 40 TA = –40°C 20 8 10 TA = 85°C 12 14 0 16 TA = –40°C 4 6 8 80 TFALL 60 40 20 2000 2500 CLOAD (pF) TELCOM SEMICONDUCTOR, INC. 3000 3500 PROPAGATION DELAYS (nsec) TRISE, TFALL (nsec) TRISE 1500 12 14 16 6 TA = 25°C, VDD = 16V 100 1000 10 Propagation Delays vs. Capacitive Load TA = 25°C, VDD = 16V 500 5 TA = 25°C VDD (VOLTS) Rise and Fall Times vs. Capacitive Load 0 4 40 VDD (VOLTS) 0 16 60 20 6 14 CLOAD = 500pF 100 TD2 (nsec) TD1 (nsec) CLOAD = 500pF 4 12 TD2 Propagation Delay vs. Supply Voltage 100 0 10 VDD (VOLTS) TD1 Propagation Delay vs. Supply Voltage 60 3 60 20 TA = –40°C 4 2 45 TD2 41 7 TD1 37 33 29 25 0 500 1000 1500 2000 2500 3000 3500 CLOAD (pF) 4-187 8