1 TC1411 TC1411N 1A HIGH-SPEED MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1411/1411N can easily switch 1000 pF gate capacitance in 25nsec with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Latch-Up Protected: Will Withstand 500mA Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .................................................... 4 kV High Peak Output Current .................................. 1A Wide Operating Range .......................... 4.5V to 16V High Capacitive Load Drive Capability .......................... 1000pF in 25nsec Short Delay Time .................................. 30nsec Typ Consistent Delay Times With Changes in Supply Voltage Matched Delay Times Low Supply Current — With Logic “1” Input ................................. 500µA — With Logic “0” Input ................................. 150µA Low Output Impedance ....................................... 8Ω Pinout Same as TC1410/12/13 PIN CONFIGURATIONS VDD 1 8 VDD IN 2 7 OUT TC1411 NC 3 GND 4 2 VDD 1 8 VDD IN 2 6 OUT NC 3 5 GND GND 4 6, 7 7 OUT TC1411N 5 GND 2 INVERTING 6 OUT 6, 7 NONINVERTING NC = NO INTERNAL CONNECTION 3 4 ORDERING INFORMATION Part No. Package Temp. Range TC1411COA TC1411CPA TC1411EOA TC1411EPA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C TC1411NCOA TC1411NCPA TC1411NEOA TC1411NEPA 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C 5 6 NOTE: SOIC pinout is identical to DIP. FUNCTIONAL BLOCK DIAGRAM TC1411 VDD INVERTING OUTPUTS 7 300mV OUTPUT NONINVERTING OUTPUTS INPUT 4.7V TC1411N GND 8 EFFECTIVE INPUT C = 10pF TC1411/N-10 10/11/96 TELCOM SEMICONDUCTOR, INC. 4-189 1A HIGH-SPEED MOSFET DRIVERS TC1411 TC1411N ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C Power Dissipation (TA ≤ 70°C) Plastic ............................................................. 730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit 2.0 — –1 – 10 — — — — — 0.8 1 10 V V µA DC Test VDD – 0.025 DC Test — VDD = 16V, IO = 10mA TA = 25°C — — 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C — VDD = 16V — Duty Cycle ≤ 2% 0.5 VDD = 16V t ≤ 300 µsec — — 8 10 10 1.0 — — 0.025 11 14 14 — — V V Ω Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current –5V ≤ VIN ≤ VDD TA = 25°C – 40°C ≤ TA ≤ 85°C Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance IPK IREV Peak Output Current Latch-Up Protection Withstand Reverse Current A A Switching Time (Note 1) tR Rise Time Figure 1 tF Fall Time Figure 1 tD1 Delay Time Figure 1 tD2 Delay Time Figure 1 Power Supply Current VIN = 3V VIN = 0V TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C — — — — — — — — — — — — 25 27 29 25 27 29 30 33 35 30 33 35 35 40 40 35 40 40 40 45 45 40 45 45 VDD = 16V — — 0.5 0.1 1.0 0.15 nsec nsec nsec nsec Power Supply IS mA NOTE: 1. Switching times are guaranteed by design. 4-190 TELCOM SEMICONDUCTOR, INC. 1A HIGH-SPEED MOSFET DRIVERS 1 TC1411 TC1411N +5V 2 90% INPUT 0V VDD= 16V 4.7µF 10% tD1 VDD 0.1µF tD2 tF tR 90% 90% 3 OUTPUT 1,8 INPUT 0V 6,7 2 10% 10% OUTPUT Inverting Driver TC1411 CL = 1000pF TC1411 TC1411N +5V 90% 4 INPUT 4,5 10% 0V VDD INPUT: 100 kHz, square wave, tRISE = tFALL £ 10nsec tD1 90% tR OUTPUT 10% 0V 90% tD2 tF 5 10% Noninverting Driver TC1411N Figure 1. Switching Time Test Circuit 6 Thermal Derating Curves 1600 MAX. POWER (mW) 1400 8 Pin DIP 1200 8 Pin CerDIP 1000 800 8 Pin SOIC 600 7 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 AMBIENT TEMPERATURE (°C) 8 TELCOM SEMICONDUCTOR, INC. 4-191 1A HIGH-SPEED MOSFET DRIVERS TC1411 TC1411N TYPICAL CHARACTERISTICS Quiescent Supply Current vs. Supply Voltage Quiescent Supply Current vs. Temperature TA = 25°C VSUPPLY = 16V 500 500 400 400 VIN = 3V ISUPPLY (µA) ISUPPLY (µA) VIN = 3V 300 200 100 0 6 8 10 12 14 200 100 VIN = 0V 4 300 0 16 VIN = 0V -40 -20 0 VDD (VOLTS) Input Threshold vs. Supply Voltage TA = 25°C 80 VSUPPLY = 16V VTHRESHOLD (VOLTS) VTHRESHOLD (VOLTS) 60 1.6 1.5 VIH 1.4 1.3 VIL 1.2 4 6 8 10 12 14 1.5 VIH 1.4 1.3 1.1 16 VIL 1.2 -40 -20 VDD (VOLTS) 25 20 20 A =8 5°C TA = 10 TA = Rds (ON) W T 20 40 60 80 Low-State Output Resistance 25 15 0 TEMPERATURE (°C) High-State Output Resistance Rds (ON) W 40 Input Threshold vs. Temperature 1.6 1.1 20 TEMPERATURE (°C) 25°C –40°C 15 T A =8 5°C 10 TA = 25°C 5 5 TA = –40° C 0 4 6 8 10 VDD (VOLTS) 4-192 12 14 16 0 4 6 8 10 12 14 16 VDD (VOLTS) TELCOM SEMICONDUCTOR, INC. 1A HIGH-SPEED MOSFET DRIVERS 1 TC1411 TC1411N Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage CLOAD = 1000pF CLOAD = 1000pF 100 100 80 80 60 TFALL (nsec) TRISE (nsec) TYPICAL CHARACTERISTICS (Cont.) TA = 85°C TA = 25°C 40 20 4 6 8 10 60 TA=25°C TA=–40°C 12 14 0 16 4 6 8 VDD (VOLTS) 14 16 4 CLOAD = 1000pF 100 100 80 80 TA = 85°C TD2 (nsec) TD1 (nsec) 12 TD2 Propagation Delay vs. Supply Voltage CLOAD = 1000pF TA = 25°C 40 TA = –40°C 20 5 60 TA = 85°C TA=25°C 40 TA = –40°C 20 0 4 6 8 10 12 14 0 16 4 6 8 VDD (VOLTS) 60 TFALL 40 20 500 1000 1500 2000 2500 CLOAD (pF) TELCOM SEMICONDUCTOR, INC. 3000 3500 PROPAGATION DELAYS (nsec) TRISE 0 14 16 6 TA = 25°C, VDD = 16V 100 0 12 Propagation Delays vs. Capacitive Load TA = 25°C, VDD = 16V 80 10 VDD (VOLTS) Rise and Fall Times vs. Capacitive Load TRISE, TFALL (nsec) 10 VDD (VOLTS) TD1 Propagation Delay vs. Supply Voltage 60 3 TA = 85°C 40 20 TA = –40°C 0 2 36 TD2 34 7 32 TD1 30 28 26 0 500 1000 1500 2000 2500 3000 3500 CLOAD (pF) 4-193 8