1 TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION ■ The TC4420/4429 are 6A (peak), single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers. Both devices have TTL-compatible inputs, which can be driven as high as VDD + 0.3V or as low as – 5V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55nsec (typ.) and the output rise and fall times are only 25nsec (typ.) into 2500pF across the usable power supply range. Unlike other drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete components saving PCB area, parts and improving overall system reliability. ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Latch-Up Protected ............. Will Withstand > 1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected ..................................................... 4kV Matched Rise and Fall Times ...................... 25nsec High Peak Output Current ......................... 6A Peak Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive ..................... 10,000 pF Short Delay Time .................................. 55nsec Typ Logic High Input, Any Voltage ............. 2.4V to VDD Low Supply Current With Logic "1" Input ... 450µA Low Output Impedance .................................... 2.5Ω Output Voltage Swing to Within 25mV of Ground or VDD APPLICATIONS ■ ■ ■ ■ Switch-Mode Power Supplies Motor Controls Pulse Transformer Driver Class D Switching Amplifiers VDD TC4429 300 mV OUTPUT INPUT TC4420 4.7V GND EFFECTIVE INPUT C = 38 pF PIN CONFIGURATIONS TO-220-5 8-Pin DIP VDD 1 8 VDD VDD 1 8 VDD 2 7 OUTPUT INPUT 2 7 OUTPUT NC 3 6 OUTPUT NC 3 6 OUTPUT GND 4 5 GND GND 4 5 GND INPUT GND VDD GND OUTPUT Tab is Connected to VDD TC4420 TC4429 Part No. Logic Package Temp. Range 5 TC4420CAT TC4420COA TC4420CPA TC4420EOA TC4420EPA TC4420IJA TC4420MJA Noninverting Noninverting Noninverting Noninverting Noninverting Noninverting Noninverting 5-Pin TO-220 0°C to +70°C 8-Pin SOIC 0°C to +70°C 8-Pin PDIP 0°C to +70°C 8-Pin SOIC – 40°C to +85°C 8-Pin PDIP – 40°C to +85°C 8-Pin CerDIP –25°C to +85°C 8-Pin CerDIP – 55°C to +125°C 6 TC4429CAT TC4429COA TC4429CPA TC4429EOA TC4429EPA TC4429IJA TC4429MJA Inverting Inverting Inverting Inverting Inverting Inverting Inverting 5-Pin TO-220 0°C to +70°C 8-Pin SOIC 0°C to +70°C 8-Pin PDIP 0°C to +70°C 8-Pin SOIC – 40°C to +85°C 8-Pin PDIP – 40°C to +85°C 8-Pin CerDIP – 25°C to +85°C 8-Pin CerDIP – 55°C to +125°C 7 8-Pin SOIC INPUT TC4420 TC4429 4 ORDERING INFORMATION FUNCTIONAL BLOCK DIAGRAM 500 µA 3 TC4420 TC4429 NOTE: Duplicate pins must both be connected for proper operation. TC4420/9-6 10/18/96 TELCOM SEMICONDUCTOR, INC. 4-225 8 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage ............................................... – 5V to > VDD Input Current (VIN > VDD) .........................................50mA Power Dissipation, TA ≤ 70°C PDIP ...............................................................730mW SOIC ...............................................................470mW CerDIP ............................................................800mW 5-Pin TO-220 ......................................................1.6W Package Power Dissipation (TA ≤ 70°C) 5-Pin TO-220 (With Heat Sink) .........................1.60W Derating Factors (To Ambient) PDIP ............................................................. 8mW/°C SOIC ............................................................. 4mW/°C CerDIP ....................................................... 6.4mW/°C 5-Pin TO-220 .............................................. 12mW/°C Thermal Impedances (To Case) 5-Pin TO-220 RθJ-C ........................................ 10°C/W Storage Temperature Range ................ – 65°C to +150°C Operating Temperature (Chip) .............................. +150°C Operating Temperature Range (Ambient) C Version ............................................... 0°C to +70°C I Version ........................................... – 25°C to +85°C E Version .......................................... – 40°C to +85°C M Version ....................................... – 55°C to +125°C Lead Temperature (Soldering, 10 sec) ................. +300°C *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Parameter Test Conditions Min Typ Max Unit Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current 0V ≤ VIN ≤ VDD 2.4 — –5 – 10 1.8 1.3 — — — 0.8 VDD+0.3 10 V V V µA High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Latch-Up Protection Withstand Reverse Current See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD = 18V (See Figure 5) Duty Cycle ≤ 2% t ≤ 300 µs VDD – 0.025 — — — — 1.5 — — 2.1 1.5 6 — — 0.025 2.8 2.5 — — V V Ω Ω A A Input VIH VIL VIN (Max) IIN Output VOH VOL RO RO IPK IREV Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1, CL = 2500 pF Figure 1, CL = 2500 pF Figure 1 Figure 1 — — — — 25 25 55 55 35 35 75 75 nsec nsec nsec nsec IS Power Supply Current VIN = 3V VIN = 0V VDD Operating Input Voltage — — 4.5 0.45 55 — 1.5 150 18 mA µA V Power Supply 4-226 TELCOM SEMICONDUCTOR, INC. 6A HIGH-SPEED MOSFET DRIVERS 1 TC4420 TC4429 ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Symbol Test Conditions Min Typ Max Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Voltage Range Input Current 0V ≤ VIN ≤ VDD 2.4 — –5 – 10 — — — — — 0.8 VDD + 0.3 10 V V V µA High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low See Figure 1 See Figure 1 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V VDD – 0.025 — — — — — 3 2.3 — 0.025 5 5 V V Ω Ω Parameter Unit 2 Input VIH VIL VIN (Max) IIN Output VOH VOL RO RO 3 Switching Time (Note 1) tR tF tD1 tD2 Rise Time Fall Time Delay Time Delay Time Figure 1, CL = 2500 pF Figure 1, CL = 2500 pF Figure 1 Figure 1 — — — — 32 34 50 65 60 60 100 100 nsec nsec nsec nsec IS Power Supply Current VIN = 3V VIN = 0V VDD Operating Input Voltage — — 4.5 0.45 60 — 3 400 18 mA µA V 4 Power Supply 5 NOTE: 1. Switching times guaranteed by design. VDD = 18V 1µF 1 +5V 8 6 90% INPUT 0.1µF 0.1µF 0V INPUT 2 6 OUTPUT 4 +18V tD1 tF tD2 tR 90% 90% OUTPUT 7 CL = 2500pF TC4429 10% 0V 10% 10% 7 INPUT: 100 kHz, square wave, tRISE = tFALL ≤ 10 nsec 5 Figure 1. Switching Time Test Circuit 8 TELCOM SEMICONDUCTOR, INC. 4-227 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS TC4420 TC4429 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage Fall Time vs. Supply Voltage 120 40 80 C L = 10,000 pF 60 C L = 4700 pF 40 C L = 2200 pF 7 9 11 13 C L = 4700 pF 40 C L = 2200 pF 20 20 5 C L = 10,000 pF 60 TIME (nsec) 80 TIME (nsec) TIME (nsec) 50 C L = 2200 pF VDD = 18V 100 0 Rise and Fall Times vs. Temperature 100 5 7 VDD (V) 9 11 VDD (V) 13 t FALL tRISE 20 10 0 –60 0 15 30 15 100 100 80 80 60 60 20 60 TA (°C) 100 140 Propagation Delay Time vs. Supply Voltage Fall Time vs. Capacitive Load Rise Time vs. Capacitive Load –20 65 VDD = 12V VDD = 18V 40 DELAY TIME (nsec) VDD = 5V 40 TIME (nsec) TIME (nsec) 60 VDD = 5V VDD = 12V VDD = 18V 20 20 55 tD2 50 45 tD1 40 10 1000 10 1000 10,000 Propagation Delay Time vs. Temperature 6 84 C L = 2200 pF VDD = 18V CL= 2200 pF tD1 20 10 70 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) tD2 18 1000 VDD = 15V 40 8 10 12 14 16 SUPPLY VOLTAGE (V) Supply Current vs. Frequency Supply Current vs. Capacitive Load 50 DELAY TIME (nsec) 4 CAPACITIVE LOAD (pF) CAPACITIVE LOAD (pF) 30 35 10,000 56 42 500 kHz 28 200 kHz 18V 10V 100 5V 10 14 20 kHz 0 –60 4-228 0 0 –20 20 60 TA (°C) 100 140 0 100 1000 CAPACITIVE LOAD (pF) 10,000 0 100 1000 FREQUENCY (kHz) 10,000 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL OPEN-DRAIN MOSFET DRIVERS 1 TC4420 TC4429 TYPICAL CHARACTERISTICS (Cont.) 2 Low-State Output Resistance High-State Output Resistance 2.5 5 100 mA 2 ROUT (Ω ) ROUT (Ω ) 4 50 mA 10 mA 100 mA 3 50 mA 1.5 3 10 mA 2 5 7 9 11 VDD (V) 13 1 15 5 7 Effect of Input Amplitude on Propagation Delay 9 11 VDD (V) 13 15 4 Total nA•S Crossover* 200 4 160 120 INPUT 2.4V INPUT 3V 80 INPUT 5V 40 INPUT 8V AND 10V Crossover Area (A•S) x 10 DELAY TIME (nsec) -9 LOAD = 2200 pF 5 3 2 1 6 0 0 5 6 7 8 9 10 11 12 13 14 15 VDD (V) 5 6 7 8 9 10 11 12 13 14 15 SUPPLY VOLTAGE (V) * The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. 7 8 TELCOM SEMICONDUCTOR, INC. 4-229