N-Channel JFET High Frequency Amplifier CORPORATION U308 – U310 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) FEATURES • High Power Gain • Low Noise Range Greater The 100dB • Dynamic • Easily Matched to 75Ω Input Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +150oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 4mW/ oC PIN CONFIGURATION NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. (TO-52) ORDERING INFORMATION G, C 5021 D Part Package Temperature Range U308-10 XU308-10 Hermetic TO-52 Sorted Chips in Carriers -55oC to +150oC -55oC to +150oC S ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL U308 PARAMETER U309 U310 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX IGSS Gate Reverse Current -150 -150 -150 pA VGS = -15V -150 -150 -150 nA VGS = 0 TA = 125oC BVGSS Gate-Source Breakdown Voltage -25 VGS(off) Gate-Source Cutoff Voltage -1.0 -6.0 -1.0 -4.0 -2.5 -6.0 IDSS Saturation Drain Current (Note 1) 12 60 12 30 24 60 mA VDS = 10V, VGS = 0 VGS(f) Gate-Source Forward Voltage 1.0 V IG = 10mA, VDS = 0 gfg Common-Gate Forward Transconductance (Note 1) gogs Common Gate Output Conductance 250 250 250 Cgd Drain-Gate Capacitance 2.5 2.5 2.5 Cgs Gate-Source Capacitance 5.0 5.0 5.0 en Equivalent Short Circuit Input Noise Voltage -25 -25 1.0 10 17 10 V 1.0 10 17 10 10 17 10 IG = -1µA, VDS = 0 VDS = 10V, ID = 1nA mS VDS = 10V, ID = 10mA f = 1kHz pF VGS = -10V, VDS = 10V f = 1MHz (Note 2) nV √ Hz VDS = 10V, ID = 10mA f = 100Hz (Note 2) µS U308 – U310 CORPORATION ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified) SYMBOL U308 PARAMETER U309 U310 UNITS TEST CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX gfg gogs Gpg NF Common-Gate Forward Transconductance Common-Gate Output Conductance Common-Gate Power Gain 15 15 15 14 14 14 0.18 0.18 0.18 0.32 0.32 0.32 14 16 14 16 14 16 10 11 10 11 10 11 Noise Figure NOTES: 1. Pulse test duration = 2ms. 2. For design reference only, not 100% tested. f = 100MHz f = 450MHz µS VDS = 10V, ID = 10mA (Note 2) f = 100MHz f = 450MHz f = 100MHz dB f = 450MHz 1.5 2.0 1.5 2.0 1.5 2.0 f = 100MHz 2.7 3.5 2.7 3.5 2.7 3.5 f = 450MHz