CALOGIC U310

N-Channel JFET
High Frequency Amplifier
CORPORATION
U308 – U310
ABSOLUTE MAXIMUM RATINGS
(TA = 25oC unless otherwise specified)
FEATURES
• High Power Gain
• Low Noise
Range Greater The 100dB
• Dynamic
• Easily Matched to 75Ω Input
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65oC to +200oC
Operating Temperature Range . . . . . . . . . . . -55oC to +150oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 4mW/ oC
PIN CONFIGURATION
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
(TO-52)
ORDERING INFORMATION
G, C
5021
D
Part
Package
Temperature Range
U308-10
XU308-10
Hermetic TO-52
Sorted Chips in Carriers
-55oC to +150oC
-55oC to +150oC
S
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified)
SYMBOL
U308
PARAMETER
U309
U310
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
IGSS
Gate Reverse Current
-150
-150
-150
pA
VGS = -15V
-150
-150
-150
nA
VGS = 0
TA = 125oC
BVGSS
Gate-Source Breakdown Voltage
-25
VGS(off)
Gate-Source Cutoff Voltage
-1.0
-6.0
-1.0
-4.0
-2.5
-6.0
IDSS
Saturation Drain Current (Note 1)
12
60
12
30
24
60
mA
VDS = 10V, VGS = 0
VGS(f)
Gate-Source Forward Voltage
1.0
V
IG = 10mA, VDS = 0
gfg
Common-Gate Forward
Transconductance (Note 1)
gogs
Common Gate Output Conductance
250
250
250
Cgd
Drain-Gate Capacitance
2.5
2.5
2.5
Cgs
Gate-Source Capacitance
5.0
5.0
5.0
en
Equivalent Short Circuit
Input Noise Voltage
-25
-25
1.0
10
17
10
V
1.0
10
17
10
10
17
10
IG = -1µA, VDS = 0
VDS = 10V, ID = 1nA
mS
VDS = 10V,
ID = 10mA
f = 1kHz
pF
VGS = -10V,
VDS = 10V
f = 1MHz
(Note 2)
nV
√
Hz
VDS = 10V,
ID = 10mA
f = 100Hz
(Note 2)
µS
U308 – U310
CORPORATION
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25oC unless otherwise specified)
SYMBOL
U308
PARAMETER
U309
U310
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfg
gogs
Gpg
NF
Common-Gate Forward
Transconductance
Common-Gate Output
Conductance
Common-Gate Power Gain
15
15
15
14
14
14
0.18
0.18
0.18
0.32
0.32
0.32
14
16
14
16
14
16
10
11
10
11
10
11
Noise Figure
NOTES: 1. Pulse test duration = 2ms.
2. For design reference only, not 100% tested.
f = 100MHz
f = 450MHz
µS
VDS = 10V,
ID = 10mA
(Note 2)
f = 100MHz
f = 450MHz
f = 100MHz
dB
f = 450MHz
1.5
2.0
1.5
2.0
1.5
2.0
f = 100MHz
2.7
3.5
2.7
3.5
2.7
3.5
f = 450MHz