N-Channel JFET General Purpose Amplifier CORPORATION J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) • High Input Impedance • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -55oC to +150oC Operating Temperature Range . . . . . . . . . . . -55oC to +135oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/ oC PIN CONFIGURATION SOT-23 NOTE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. G TO-92 D S ORDERING INFORMATION PRODUCT MARKING (SOT-23) SST201 A01 SST202 A02 SST203 A03 SST204 A04 G D S 5010 Part Package Temperature Range J201-204 Plastic TO-92 -55oC to +135oC SST201-204 Plastic SOT-23 -55oC to +135oC For Sorted Chips in Carriers see 2N4338 series. ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) SYMBOL PARAMETER 201 202 203 204 MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX IGSS Gate Reverse Current (Note 1) VGS(off) Gate-Source Cutoff Voltage -0.3 BVGSS Gate-Source Breakdown Voltage -40 IDSS Saturation Drain Current (Note 2) 0.2 IG Gate Current (Note 1) gfs Common-Source Forward 500 Transconductance (Note 2) gos Common-Source Output Conductance 1 3.5 10 2.5 Ciss Common-Source Input Capacitance 4 4 4 4 Crss Common-Source Reverse Transfer Capacitance 1 1 1 1 en Equivalent Short-Circuit Input Noise Voltage 5 5 5 10 -100 -100 -1.5 -0.8 -4.0 -2.0 -100 -100 -10.0 -0.3 -2.0 UNITS pA TEST CONDITIONS VDS = 0, VGS = -20V VDS = 20V, ID = 10nA V -40 1.0 -40 0.9 -10 4.5 4.0 -10 1,000 -25 20 -10 1,500 0.2 VDS = 0, IG = -1µA 1.2 -10 3.0 mA VDS = 20V, VGS = 0 pA VDG = 20V, ID = IDSS(min) 500 1,500 µs VDS = 20V, VGS = 0 pF NOTES: 1. Approximately doubles for every 10oC increase in TA. 2. Pulse test duration = 2ms. 3. For design reference only, not 100% tested. f = 1kHz nV √ Hz f = 1MHz (Note 3) VDS = 10V, f = 1kHz VGS = 0 (Note 3)