CEL NE685M33

DATA SHEET
NEC's NPN SILICON TRANSISTOR NE685M33
FEATURES
•
LOW NOISE:
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz
•
INSERTION POWER GAIN:
|S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
•
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NE685M33-A
50 pcs (Non reel)
• 8 mm wide embossed taping
NE685M33-T3-A
10 kpcs/reel
• Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
PARAMETER
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
6.0
V
Emitter to Base Voltage
VEBO
2.0
V
IC
30
mA
Collector Current
Total Power Dissipation
130
mW
Junction Temperature
Ptot
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories
NE685M33
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
–
–
100
nA
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
ICBO
VCB = 5 V, IE = 0 mA
IEBO
VEB = 1 V, IC = 0 mA
–
–
100
nA
hFE Note 1
VCE = 3 V, IC = 10 mA
75
110
150
–
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
10
12
–
GHz
|S21e|2
VCE = 3 V, IC = 10 mA, f = 2 GHz
7
11
–
dB
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt
–
1.5
2.5
dB
Cre Note 2
VCB = 3 V, IC = 0 mA, f = 1 MHz
–
0.4
0.7
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
RANK
FB
Marking
Y2
hFE Value
75 to 150
NE685M33
TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance Cre (pF)
200
150
130
100
50
0
100
Collector Current IC (mA)
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
25
50
75
100
125
0.2
0.1
2
4
6
8
10
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
0.01
0.001
VCE = 2 V
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
VCE = 3V
35
10
Collector Current IC (mA)
Collector Current IC (mA)
0.3
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0.1
1
0.1
0.01
0.001
0.0001
0.4
0.4
Collector to Base Voltage VCB (V)
1
100
f = 1 MHz
Ambient Temperature TA (ºC)
10
0.0001
0.4
0.5
0
150
Collector Current IC (mA)
Total Power Dissipation Ptot (mW)
250
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
30
400 µ A 350 µ A 300 µ A
250 µ A
25
200 µ A
20
150 µ A
15
100 µ A
10
IB = 50 µ A
5
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Remark The graphs indicate nominal characteristics.
0
2
4
6
Collector to Emitter Voltage VCE (V)
8
NE685M33
TYPICAL CHARACTERISTICS (TA =+25ºC, unless otherwise specified)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
100
10
0.1
1
10
100
Collector Current IC (mA)
DC Current Gain hFE
1000
VCE = 3 V
100
1
10
VCE = 2 V
100
10
0.1
1
10
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
10
0.1
1000
DC Current Gain hFE
DC Current Gain hFE
1000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
100
NE685M33
PACKAGE DIMENSIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33) (UNIT: mm)
0.64±0.05
(Bottom View)
0.15
0.125
0.15
0.285
1
3
0.125
0.57
2
Y2
0.84±0.05
0.44±0.05
0.4
0.11
0.15
NE package code: M33
SOT number: -
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
06/22/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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