NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES NE696M01 OUTLINE DIMENSIONS (Units in mm) • HIGH fT: 14 GHz TYP at 3 V, 10 mA PACKAGE OUTLINE M01 • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz TOP VIEW HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz • 6 PIN SMALL MINI MOLD PACKAGE • EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 1.25 ± 0.1 0.65 1 2.0 ± 0.2 1.3 2 6 T95 • 2.1 ± 0.1 0.2 (All Leads) 5 3 4 SIDE VIEW DESCRIPTION 0.9 ± 0.1 NEC's NE696M01 is an NPN high frequency silicon epitaxial transistor (NE685) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE696M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. 0.7 +0.10 0.15 - 0.05 0 ~ 0.1 PIN OUT 1. Emitter 2. Emitter 3. Base 4. Emitter 5. Emitter 6. Collector Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE696M01 M01 UNITS ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE1 Forward Current Gain at VCE = 3 V, IC = 10 mA fT Cre2 |S21E|2 NF Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz MIN TYP MAX 0.1 0.1 80 120 GHz 14 pF 0.15 Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 14 Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB 1.6 160 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. 3. For Tape and Reel version use part number NE696M01-T1, 3K per reel. California Eastern Laboratories NE696M01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation mW 150 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE696M01-T1-A 3000 Tape & Reel TYPICAL PERFORMANCE CURVES (TA = 25˚C) NE696M01 TYPICAL NOISE PARAMETERS (TA = 25˚C) FREQ. (GHz) VCE = 1 V, IC = 3 mA 1.0 1.4 1.4 1.46 1.7 1.55 2.0 1.8 3.0 2.3 VCE = 2 V, IC = 1 mA 0.5 .94 0.8 1.1 1.0 1.25 1.5 1.55 2.0 1.94 3.0 2.65 VCE = 2 V, IC = 5 mA 0.5 1.2 0.8 1.32 1.0 1.47 1.5 1.63 2.0 1.82 3.0 2.17 VCE = 3 V, IC = 5 mA 0.5 0.8 1.0 1.5 2.0 3.0 1.25 1.35 1.41 1.58 1.81 2.29 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE GA (dB) MAG ANG Rn/50 18.5 16.4 15.2 14.5 11.0 0.53 0.47 0.43 0.39 0.3 79 95 111 132 177 0.27 0.13 0.19 0.16 0.10 16.8 14.8 13.8 11.4 9.6 7.0 0.72 0.66 0.63 0.56 0.5 0.46 41 65 79 104 138 -173 0.52 0.44 0.39 0.31 0.17 0.07 23.0 20.3 18.8 15.8 13.0 9.8 0.49 0.44 0.42 0.39 0.33 0.25 37 62 76 98 126 173 0.38 0.27 0.30 0.23 0.18 0.10 24.2 20.7 18.8 15.2 13.7 12.0 0.5 0.45 0.44 0.41 0.34 0.29 37 62 78 97 126 164 0.39 0.26 0.29 0.24 0.20 0.09 ΓOPT COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 200 VCE = 2 V Collector Current, IC (mA) Total Power Dissipation, PT (mW) NFOPT (dB) 100 40 30 20 10 0 0 50 100 0 150 0.5 DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 500 200 µA 180 µA 160 µA 140 µA 120 µA 100 µA 80 µA 15 10 60 µA 5 40 µA DC Current Gain, hFE Collector Current, IC (mA) 25 20 1.0 Base to Emitter Voltage, VBE (V) Ambient Temperature, TA (˚C) 200 VCE = 2 V 100 50 VCE = 1 V 20 IB = 20 µA 10 0 1.0 2.0 3.0 Collector to Emitter Voltage, VCE (V) 1 2 5 10 20 50 Collector Current, IC (mA) 100 NE696M01 TYPICAL PERFORMANCE CURVES (TA = 25 °C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 150.0 DC Current Gain, hFE (mA) Collector Current, IC (mA) 30.0m IC 2.00m /div HFE 10.0 /div 50.0 0.00 0.00 VCE (V) 500m /div 0.00 6.00 IC (A) 2.00m /div 30.0m Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE696M01 VCE = 1 V, IC = 5 mA FREQUENCY S11 (GHz) 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.60 1.80 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 MAG 0.728 0.684 0.639 0.594 0.556 0.522 0.492 0.442 0.406 0.380 0.362 0.353 0.351 0.360 0.377 0.397 0.451 0.498 0.538 0.567 0.587 0.608 0.630 0.657 0.690 S21 ANG -52.30 -64.20 -73.80 -83.40 -92.50 -100.70 -108.50 -123.40 -137.30 -150.60 -164.30 -176.70 167.30 152.60 138.80 127.30 107.70 93.20 82.30 74.10 67.30 61.10 55.20 49.10 42.90 MAG 10.962 10.349 9.557 8.885 8.236 7.644 7.116 6.242 5.522 4.931 4.452 4.047 3.606 3.248 2.942 2.676 2.251 1.930 1.690 1.509 1.361 1.229 1.091 0.949 0.818 S12 ANG 136.50 128.40 121.20 114.50 108.30 102.80 97.80 88.70 80.40 73.00 65.90 59.30 51.40 43.80 36.40 29.70 16.40 4.10 -7.90 -19.70 -31.50 -43.20 -54.40 -63.80 -70.40 MAG 0.040 0.046 0.052 0.056 0.059 0.062 0.063 0.067 0.069 0.070 0.072 0.074 0.075 0.077 0.079 0.081 0.085 0.092 0.101 0.113 0.127 0.141 0.155 0.164 0.171 S22 ANG 56.00 51.30 46.70 42.10 38.80 35.70 33.80 29.60 26.80 24.40 22.70 21.90 20.20 20.20 19.30 18.50 18.50 17.50 16.20 13.60 9.40 4.00 -1.40 -6.40 -9.20 MAG 0.832 0.779 0.732 0.687 0.647 0.615 0.587 0.542 0.509 0.485 0.469 0.459 0.451 0.449 0.453 0.458 0.477 0.496 0.513 0.532 0.555 0.593 0.637 0.678 0.719 ANG -32.90 -39.10 -44.00 -48.50 -52.30 -55.70 -58.60 -64.10 -69.10 -73.40 -77.90 -81.80 -86.70 -91.40 -96.10 -100.50 -108.90 -118.00 -128.80 -142.40 -158.60 -175.70 168.60 157.90 154.80 K MAG1 0.303 0.338 0.398 0.463 0.522 0.579 0.640 0.748 0.860 0.976 1.069 1.151 1.270 1.353 1.417 1.475 1.530 1.515 1.460 1.371 1.283 1.175 1.077 1.009 0.911 (dB) 24.378 23.521 22.643 22.005 21.449 20.909 20.529 19.692 19.032 18.478 16.304 15.018 13.695 12.702 11.872 11.110 9.936 8.980 8.216 7.622 7.107 6.870 6.778 7.057 6.798 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE696M01 TYPICAL SCATTERING PARAMETERS (TA = 25°C) 0.8 90˚ 1 1.5 0.6 2 135˚ 0.4 S21 45˚ 3 4 5 0.2 0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 10 20 10 20 50 -50 S12 180˚ 0.05 -20 0.10 0.15 0˚ -10 5.00 Coordinates in Ohms Frequency in GHz VCE = 2 V, IC = 10 mA -5 -4 S22 -0.2 S11 -3 -0.4 -2 -0.6 225˚ 15.00 315˚ -1.5 -0.8 NE696M01 VCE = 2 V, IC = 1 mA FREQUENCY GHz 0.40 0.80 1.00 2.00 2.50 3.00 4.00 5.00 6.00 10.00 -1 270˚ S11 MAG 0.941 0.874 0.833 0.610 0.536 0.502 0.550 0.617 0.660 S21 S12 S22 K MAG1 ANG -25.2 -49.7 -61.1 -119.1 -150.6 176.8 123.5 93.4 74.9 MAG 2.924 2.776 2.642 2.104 1.808 1.551 1.121 0.852 0.665 ANG 154.2 132.3 122.1 75.2 54.7 36.1 4.0 -22.3 -45.6 MAG 0.037 0.066 0.077 0.097 0.090 0.077 0.053 0.071 0.116 ANG 67.9 51.3 43.1 9.5 -2.7 -10.4 -0.2 25.0 21.5 MAG 0.977 0.930 0.904 0.798 0.765 0.755 0.769 0.789 0.821 ANG -16.3 -31.3 -37.9 -66.0 -77.3 -87.4 -107.1 -133.7 -169.3 0.181 0.255 0.315 0.662 0.919 1.238 2.016 1.607 1.048 (dB) 18.978 16.239 15.354 13.363 13.030 10.100 7.495 6.222 6.238 -46.2 -83.4 -98.3 -165.4 161.7 134.1 97.3 77.4 64.3 11.297 8.809 7.704 4.496 3.634 3.005 2.169 1.697 1.381 139.6 111.9 101.4 61.9 46.0 31.6 5.4 -19.0 -43.2 0.030 0.047 0.051 0.059 0.062 0.066 0.081 0.107 0.141 59.6 43.1 37.7 27.5 27.6 27.8 29.4 25.2 14.8 0.871 0.715 0.660 0.541 0.530 0.538 0.575 0.610 0.666 -27.0 -43.8 -49.4 -70.7 -80.0 -89.2 -107.7 -132.7 -167.0 0.296 0.509 0.628 1.163 1.357 1.460 1.386 1.152 0.921 25.758 22.728 21.791 16.374 14.112 12.563 10.575 9.638 9.910 VCE = 2 V, IC = 5 mA 0.40 0.80 1.00 2.00 2.50 3.00 4.00 5.00 6.00 0.753 0.583 0.513 0.338 0.333 0.366 0.468 0.543 0.591 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE696M01 TYPICAL SCATTERING PARAMETERS (TA = 25°C) NE696M01 VCE = 3 V, IC = 5 mA FREQUENCY S11 (GHz) 0.40 0.80 1.00 2.00 2.50 3.00 4.00 5.00 6.00 MAG 0.765 0.596 0.525 0.335 0.323 0.353 0.456 0.533 0.583 S21 ANG -43.9 -79.7 -94.2 -160.2 166.2 137.5 99.2 78.9 65.7 MAG 11.370 8.988 7.898 4.669 3.781 3.134 2.266 1.773 1.442 S12 ANG 140.8 113.4 102.7 63.0 47.0 32.4 5.9 -18.6 -43.1 MAG 0.028 0.043 0.046 0.054 0.057 0.062 0.078 0.106 0.142 S22 ANG 60.3 44.4 39.6 30.6 30.6 31.8 34.1 29.7 18.5 MAG 0.885 0.739 0.687 0.573 0.562 0.570 0.606 0.642 0.695 ANG -25.1 -41.1 -46.5 -67.5 -76.6 -85.9 -104.5 -129.8 -164.2 K MAG1 0.299 0.506 0.627 1.159 1.352 1.422 1.312 1.053 0.823 (dB) 26.086 23.202 22.348 16.952 14.673 13.178 11.285 10.827 10.067 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE696M01 NE696M01 NONLINEAR MODEL SCHEMATIC LCX 0.05pF COLLECTOR LBX LB 0.15nH 1.3nH CCB Q1 0.58nH CCE BASE 0.15pF CCE_PKG 0.5pF CBE_PKG LE 0.22nH 0.13pF LEX 0.15nH EMITTER UNITS BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 Parameter Units IS 7e-16 MJC 0.34 time seconds BF 119 XCJC 0.6 capacitance farads NF 1.06 CJS 0 inductance henries resistance ohms VAF 20.5 VJS 0.75 IKF 0.18 MJS 0 voltage volts ISE 1e-13 FC 0.5 current amps 4e-12 NE 2 TF BR 6.5 XTF 5.2 NR 1.08 VTF 4.58 VAR 18 ITF 0.01 CCB 0.05e-12 IKR 0.015 PTF 0 CCE 0.15e-12 ISC 0 TR 1e-9 LB 1.3e-9 NC 2 EG 1.11 LE 0.22e-9 RE 1.23 XTB 0 CCEPKG 0.5e-12 RB 11 XTI 3 CBEPKG 0.13e-12 RBM 2.5 KF 0 LBX 0.15e-9 IRB 0.009 AF 1 LCX 0.58e-9 RC 5 LEX 0.15e-9 CJE 0.4e-12 VJE 0.68 MJE 0.5 CJC 0.18e-12 VJC 0.5 ADDITIONAL PARAMETERS Parameters 696M01 MODEL RANGE Frequency: 0.4 to 7.5 GHz Bias: VCE = 0.5 V to 5 V, IC = 0.5 mA to 10 mA Date: 2/6/97 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/21/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 5-192 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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