CEL NE696M01

NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
NE696M01
OUTLINE DIMENSIONS (Units in mm)
•
HIGH fT:
14 GHz TYP at 3 V, 10 mA
PACKAGE OUTLINE M01
•
LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
TOP VIEW
HIGH GAIN:
|S21E|2 = 14 dB TYP at 2 GHz
•
6 PIN SMALL MINI MOLD PACKAGE
•
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
1.25 ± 0.1
0.65
1
2.0 ± 0.2
1.3
2
6
T95
•
2.1 ± 0.1
0.2 (All Leads)
5
3
4
SIDE VIEW
DESCRIPTION
0.9 ± 0.1
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
0.7
+0.10
0.15 - 0.05
0 ~ 0.1
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NE696M01
M01
UNITS
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
µA
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
µA
hFE1
Forward Current Gain at VCE = 3 V, IC = 10 mA
fT
Cre2
|S21E|2
NF
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
MIN
TYP
MAX
0.1
0.1
80
120
GHz
14
pF
0.15
Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz
dB
14
Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz
dB
1.6
160
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
California Eastern Laboratories
NE696M01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9
VCEO
Collector to Emitter Voltage
V
6
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
30
PT
Total Power Dissipation
mW
150
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKAGING
NE696M01-T1-A
3000
Tape & Reel
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
NE696M01
TYPICAL NOISE PARAMETERS (TA = 25˚C)
FREQ.
(GHz)
VCE = 1 V, IC = 3 mA
1.0
1.4
1.4
1.46
1.7
1.55
2.0
1.8
3.0
2.3
VCE = 2 V, IC = 1 mA
0.5
.94
0.8
1.1
1.0
1.25
1.5
1.55
2.0
1.94
3.0
2.65
VCE = 2 V, IC = 5 mA
0.5
1.2
0.8
1.32
1.0
1.47
1.5
1.63
2.0
1.82
3.0
2.17
VCE = 3 V, IC = 5 mA
0.5
0.8
1.0
1.5
2.0
3.0
1.25
1.35
1.41
1.58
1.81
2.29
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
GA
(dB)
MAG
ANG
Rn/50
18.5
16.4
15.2
14.5
11.0
0.53
0.47
0.43
0.39
0.3
79
95
111
132
177
0.27
0.13
0.19
0.16
0.10
16.8
14.8
13.8
11.4
9.6
7.0
0.72
0.66
0.63
0.56
0.5
0.46
41
65
79
104
138
-173
0.52
0.44
0.39
0.31
0.17
0.07
23.0
20.3
18.8
15.8
13.0
9.8
0.49
0.44
0.42
0.39
0.33
0.25
37
62
76
98
126
173
0.38
0.27
0.30
0.23
0.18
0.10
24.2
20.7
18.8
15.2
13.7
12.0
0.5
0.45
0.44
0.41
0.34
0.29
37
62
78
97
126
164
0.39
0.26
0.29
0.24
0.20
0.09
ΓOPT
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
200
VCE = 2 V
Collector Current, IC (mA)
Total Power Dissipation, PT (mW)
NFOPT
(dB)
100
40
30
20
10
0
0
50
100
0
150
0.5
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
80 µA
15
10
60 µA
5
40 µA
DC Current Gain, hFE
Collector Current, IC (mA)
25
20
1.0
Base to Emitter Voltage, VBE (V)
Ambient Temperature, TA (˚C)
200
VCE = 2 V
100
50
VCE = 1 V
20
IB = 20 µA
10
0
1.0
2.0
3.0
Collector to Emitter Voltage, VCE (V)
1
2
5
10
20
50
Collector Current, IC (mA)
100
NE696M01
TYPICAL PERFORMANCE CURVES (TA = 25 °C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
150.0
DC Current Gain, hFE (mA)
Collector Current, IC (mA)
30.0m
IC
2.00m
/div
HFE
10.0
/div
50.0
0.00
0.00
VCE (V)
500m /div
0.00
6.00
IC (A)
2.00m /div
30.0m
Collector Current, IC (mA)
Collector to Emitter Voltage, VCE (V)
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE696M01
VCE = 1 V, IC = 5 mA
FREQUENCY
S11
(GHz)
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.60
1.80
2.00
2.25
2.50
2.75
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
MAG
0.728
0.684
0.639
0.594
0.556
0.522
0.492
0.442
0.406
0.380
0.362
0.353
0.351
0.360
0.377
0.397
0.451
0.498
0.538
0.567
0.587
0.608
0.630
0.657
0.690
S21
ANG
-52.30
-64.20
-73.80
-83.40
-92.50
-100.70
-108.50
-123.40
-137.30
-150.60
-164.30
-176.70
167.30
152.60
138.80
127.30
107.70
93.20
82.30
74.10
67.30
61.10
55.20
49.10
42.90
MAG
10.962
10.349
9.557
8.885
8.236
7.644
7.116
6.242
5.522
4.931
4.452
4.047
3.606
3.248
2.942
2.676
2.251
1.930
1.690
1.509
1.361
1.229
1.091
0.949
0.818
S12
ANG
136.50
128.40
121.20
114.50
108.30
102.80
97.80
88.70
80.40
73.00
65.90
59.30
51.40
43.80
36.40
29.70
16.40
4.10
-7.90
-19.70
-31.50
-43.20
-54.40
-63.80
-70.40
MAG
0.040
0.046
0.052
0.056
0.059
0.062
0.063
0.067
0.069
0.070
0.072
0.074
0.075
0.077
0.079
0.081
0.085
0.092
0.101
0.113
0.127
0.141
0.155
0.164
0.171
S22
ANG
56.00
51.30
46.70
42.10
38.80
35.70
33.80
29.60
26.80
24.40
22.70
21.90
20.20
20.20
19.30
18.50
18.50
17.50
16.20
13.60
9.40
4.00
-1.40
-6.40
-9.20
MAG
0.832
0.779
0.732
0.687
0.647
0.615
0.587
0.542
0.509
0.485
0.469
0.459
0.451
0.449
0.453
0.458
0.477
0.496
0.513
0.532
0.555
0.593
0.637
0.678
0.719
ANG
-32.90
-39.10
-44.00
-48.50
-52.30
-55.70
-58.60
-64.10
-69.10
-73.40
-77.90
-81.80
-86.70
-91.40
-96.10
-100.50
-108.90
-118.00
-128.80
-142.40
-158.60
-175.70
168.60
157.90
154.80
K
MAG1
0.303
0.338
0.398
0.463
0.522
0.579
0.640
0.748
0.860
0.976
1.069
1.151
1.270
1.353
1.417
1.475
1.530
1.515
1.460
1.371
1.283
1.175
1.077
1.009
0.911
(dB)
24.378
23.521
22.643
22.005
21.449
20.909
20.529
19.692
19.032
18.478
16.304
15.018
13.695
12.702
11.872
11.110
9.936
8.980
8.216
7.622
7.107
6.870
6.778
7.057
6.798
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE696M01
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
0.8
90˚
1
1.5
0.6
2
135˚
0.4
S21
45˚
3
4
5
0.2
0.2
0.4
0.6
0.8 1
1.5
2
3
4 5
10 20
10
20
50
-50
S12
180˚
0.05
-20
0.10 0.15
0˚
-10
5.00
Coordinates in Ohms
Frequency in GHz
VCE = 2 V, IC = 10 mA
-5
-4
S22
-0.2
S11
-3
-0.4
-2
-0.6
225˚
15.00
315˚
-1.5
-0.8
NE696M01
VCE = 2 V, IC = 1 mA
FREQUENCY
GHz
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
10.00
-1
270˚
S11
MAG
0.941
0.874
0.833
0.610
0.536
0.502
0.550
0.617
0.660
S21
S12
S22
K
MAG1
ANG
-25.2
-49.7
-61.1
-119.1
-150.6
176.8
123.5
93.4
74.9
MAG
2.924
2.776
2.642
2.104
1.808
1.551
1.121
0.852
0.665
ANG
154.2
132.3
122.1
75.2
54.7
36.1
4.0
-22.3
-45.6
MAG
0.037
0.066
0.077
0.097
0.090
0.077
0.053
0.071
0.116
ANG
67.9
51.3
43.1
9.5
-2.7
-10.4
-0.2
25.0
21.5
MAG
0.977
0.930
0.904
0.798
0.765
0.755
0.769
0.789
0.821
ANG
-16.3
-31.3
-37.9
-66.0
-77.3
-87.4
-107.1
-133.7
-169.3
0.181
0.255
0.315
0.662
0.919
1.238
2.016
1.607
1.048
(dB)
18.978
16.239
15.354
13.363
13.030
10.100
7.495
6.222
6.238
-46.2
-83.4
-98.3
-165.4
161.7
134.1
97.3
77.4
64.3
11.297
8.809
7.704
4.496
3.634
3.005
2.169
1.697
1.381
139.6
111.9
101.4
61.9
46.0
31.6
5.4
-19.0
-43.2
0.030
0.047
0.051
0.059
0.062
0.066
0.081
0.107
0.141
59.6
43.1
37.7
27.5
27.6
27.8
29.4
25.2
14.8
0.871
0.715
0.660
0.541
0.530
0.538
0.575
0.610
0.666
-27.0
-43.8
-49.4
-70.7
-80.0
-89.2
-107.7
-132.7
-167.0
0.296
0.509
0.628
1.163
1.357
1.460
1.386
1.152
0.921
25.758
22.728
21.791
16.374
14.112
12.563
10.575
9.638
9.910
VCE = 2 V, IC = 5 mA
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
0.753
0.583
0.513
0.338
0.333
0.366
0.468
0.543
0.591
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE696M01
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE696M01
VCE = 3 V, IC = 5 mA
FREQUENCY
S11
(GHz)
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
MAG
0.765
0.596
0.525
0.335
0.323
0.353
0.456
0.533
0.583
S21
ANG
-43.9
-79.7
-94.2
-160.2
166.2
137.5
99.2
78.9
65.7
MAG
11.370
8.988
7.898
4.669
3.781
3.134
2.266
1.773
1.442
S12
ANG
140.8
113.4
102.7
63.0
47.0
32.4
5.9
-18.6
-43.1
MAG
0.028
0.043
0.046
0.054
0.057
0.062
0.078
0.106
0.142
S22
ANG
60.3
44.4
39.6
30.6
30.6
31.8
34.1
29.7
18.5
MAG
0.885
0.739
0.687
0.573
0.562
0.570
0.606
0.642
0.695
ANG
-25.1
-41.1
-46.5
-67.5
-76.6
-85.9
-104.5
-129.8
-164.2
K
MAG1
0.299
0.506
0.627
1.159
1.352
1.422
1.312
1.053
0.823
(dB)
26.086
23.202
22.348
16.952
14.673
13.178
11.285
10.827
10.067
Note:
1. Gain Calculation:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE696M01
NE696M01 NONLINEAR MODEL
SCHEMATIC
LCX
0.05pF
COLLECTOR
LBX
LB
0.15nH
1.3nH
CCB
Q1
0.58nH
CCE
BASE
0.15pF
CCE_PKG
0.5pF
CBE_PKG
LE
0.22nH
0.13pF
LEX
0.15nH
EMITTER
UNITS
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters
Q1
Parameters
Q1
Parameter
Units
IS
7e-16
MJC
0.34
time
seconds
BF
119
XCJC
0.6
capacitance
farads
NF
1.06
CJS
0
inductance
henries
resistance
ohms
VAF
20.5
VJS
0.75
IKF
0.18
MJS
0
voltage
volts
ISE
1e-13
FC
0.5
current
amps
4e-12
NE
2
TF
BR
6.5
XTF
5.2
NR
1.08
VTF
4.58
VAR
18
ITF
0.01
CCB
0.05e-12
IKR
0.015
PTF
0
CCE
0.15e-12
ISC
0
TR
1e-9
LB
1.3e-9
NC
2
EG
1.11
LE
0.22e-9
RE
1.23
XTB
0
CCEPKG
0.5e-12
RB
11
XTI
3
CBEPKG
0.13e-12
RBM
2.5
KF
0
LBX
0.15e-9
IRB
0.009
AF
1
LCX
0.58e-9
RC
5
LEX
0.15e-9
CJE
0.4e-12
VJE
0.68
MJE
0.5
CJC
0.18e-12
VJC
0.5
ADDITIONAL PARAMETERS
Parameters
696M01
MODEL RANGE
Frequency: 0.4 to 7.5 GHz
Bias:
VCE = 0.5 V to 5 V, IC = 0.5 mA to 10 mA
Date:
2/6/97
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/21/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
5-192
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
3-193