CE LL4151 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 500mW power dissipation . The diode is also available in the DO-35 case with the type designation 1N4151 MECHANICAL DATA . Case: MinMelf glass case(SOD- 80) . Weight: Approx. 0.05gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbol Value Units VR 50 Volts Peak reverse voltage VRM 75 Volts Average rectified current, Half wave rectification with IAV 1501) mA Reverse voltage Resistive load at TA=25 and F 50Hz Surge forward current at t<1S and TJ=25 IFSM 500 mA Power dissipation at TA=25 Ptot 5001) mW TJ 175 TSTG -65 to + 175 Junction temperature Storage temperature range 1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35) ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified) Symbols Forward voltage Leakage current at VR=50V at VR=20V, TJ=150 Junction capacitance at VR=VF=0V Reverse breakdown voltage tested with 5 A Reverse recovery time from IF=10mA to IR=1mA, from IF=10mA to IR=1mA VR=6V, RL=100 Thermal resistance junction to ambient Rectification efficience at f=100MHz,VRF=2V Max. Units VF 1 Volts IR 50 nA IR 50 A 2 pF CJ Min. Typ. 75 V(BR)R V trr 4 ns trr 2 ns R JA 3501) K/W 0.45 1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 1 of 3 CE LL4151 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE RATINGS AND CHATACTERISTIC CURVES LL4151 FIG.2-DYNAMIC FORWARD RESISTANCE FLG.1-FORWARD CHARACTERISTICS FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE VERSUS FORWARD CURRENT FIG.4-RELATIVE CAPACITANCE VERSUS VOLTAGE Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 2 of 3 CE LL4151 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD Page 3 of 3