BCP 54, BCP 55, BCP 56 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 0.7 2.3 2 ±0.2 3.5 ±0.3 7 1 1.3 W Plastic case Kunststoffgehäuse 4 3 3.25 Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E NPN SOT-223 Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCP 54 BCP 55 BCP 56 Collector-Emitter-voltage B open VCE0 45 V 60 V 80 V Collector-Base-voltage E open VCB0 45 V 60 V 100 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 1.3 W 1) Collector current – Kollektorstrom (DC) IC 1A Peak Collector current – Koll.-Spitzenstrom ICM 1.5 A Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temp. – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V ICB0 – – 100 nA IE = 0, VCB = 30 V, Tj = 125/C ICB0 – – 10 :A IEB0 – – 100 nA – – 500 mV Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V Collector saturation volt. – Kollektor-Sättigungsspg. 2) IC = 500 mA, IB = 50 mA 1 VCEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 26 01.11.2003 General Purpose Transistors BCP 54, BCP 55, BCP 56 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 2 V, IC = 150 mA VCE = 2 V, IC = 5 mA VCE = 2 V, IC = 500 mA BCP 5x-6 hFE 40 – 100 BCP 5x-10 hFE 63 – 160 BCP 5x-16 hFE 100 – 250 hFE BCP 54... BCP56 hFE 63 – – 40 – – VBEon – – 1V fT – 130 MHz – hFE1'hFE2 – – 1.6 Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 2 V, IC = 500 mA Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz DC current gain ratio of the complement. pairs Verhältnis der Stromverst. complement. Paare Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft RthA 95 K/W 2) junction to soldering point – Sperrschicht zu Lötpad RthS 14 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BCP 51, BCP 52, BCP 53 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 27