BCW 65, BCW 66 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Maße in mm 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCW 65 BCW 66 Collector-Emitter-voltage B open VCE0 32 V 45 V Collector-Base-voltage E open VCB0 60 V 75 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 250 mW 1) Collector current – Kollektorstrom (DC) IC 800 mA Peak Collector current – Kollektor-Spitzenstrom ICM 1000 mA Base current – Basis-Spitzenstrom IB 100 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. ICB0 – – 20 nA ICB0 – – 20 :A ICB0 – – 20 nA ICB0 – – 20 :A IEB0 – – 20 nA Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 150/C IE = 0, VCB = 45 V IE = 0, VCB = 45 V, Tj = 150/C BCW 65 BCW 66 Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 4 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 42 01.11.2003 General Purpose Transistors BCW 65, BCW 66 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector saturation volt. – Kollektor-Sättigungsspg. 1) IC = 100 mA, IB = 10 mA VCEsat – – 300 mV IC = 500 mA, IB = 50 mA VCEsat – – 700 mV Base saturation voltage – Basis-Sättigungsspannung 1) IC = 100 mA, IB = 10 mA VBEsat – – 1.25 V IC = 500 mA, IB = 50 mA VBEsat – – 2V DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 10 V, IC = 100 :A VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 100 mA VCE = 2 V, IC = 500 mA BCW 65A / 66F hFE 35 – – BCW 65B / 66G hFE 50 – – BCW 65C / 66H hFE 80 – – BCW 65A / 66F hFE 75 – – BCW 65B / 66G hFE 110 – – BCW 65C / 66H hFE 180 – – BCW 65A / 66F hFE 100 160 250 BCW 65B / 66G hFE 160 250 400 BCW 65C / 66H hFE 250 350 630 BCW 65A / 66F hFE – 35 – BCW 65B / 66G hFE – 60 – BCW 65C / 66H hFE – 100 – fT – 170 MHz – – 6 pF – – 60 pF – Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 50 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Marking – Stempelung 420 K/W 2) RthA BCW 67, BCW 68 BCW 65A = EA BCW 65B = EB BCW 65C = EC BCW 66F = EF BCW 66G = EG BCW 66H = EH ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 43