BSP 40 ... BSP 43 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.3 W Plastic case Kunststoffgehäuse 4 1 NPN 3 3.25 Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E SOT-223 Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSP 40 BSP 41 BSP 42 BSP 43 Collector-Emitter-voltage B open VCE0 60 V 80 V Collector-Base-voltage E open VCB0 70 V 90 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 1.3 W 1) Collector current – Kollektorstrom (dc) IC 1A Peak Collector current – Kollektor-Spitzenstrom ICM 2A Peak Base current – Basis-Spitzenstrom IBM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 60 V ICB0 – – 100 nA IE = 0, VCB = 60 V, Tj = 150/C ICB0 – – 50 :A IEB0 – – 100 nA Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V Collector saturation volt. – Kollektor-Sättigungsspg. 2) 1 IC = 150 mA, IB = 15 mA VCEsat – – 250 mV IC = 500 mA, IB = 50 mA VCEsat – – 500 mV ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 4 01.11.2003 Switching Transistors BSP 40 ... BSP 43 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 150 mA, IB = 15 mA VBEsat – – 1V IC = 500 mA, IB = 50 mA VBEsat – – 1.2 V hFE 10 – – hFE 40 – 120 hFE 30 – – hFE 30 – – hFE 100 – 300 hFE 50 – – fT 100 MHz – – DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA BSP 40 BSP 42 BSP 41 BSP 43 Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft RthA 93 K/W 2) junction to soldering point – Sperrschicht zu Lötpad RthS 12 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BSP 30, BSP 31, BSP 32, BSP 33 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 5