SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 D Generates Clocks for Next Generation D D D D D D D Microprocessors Uses a 14.318-MHz Crystal Input to Generate Multiple Output Frequencies Includes Spread Spectrum Clocking (SSC), 0.6% Downspread for Reduced EMI With Theoretical EMI of 7 dB Power Management Control Terminals Low Output Skew and Jitter for Clock Distribution Operates From a Single 3.3-V Supply Generates the Following Clocks: − 8 Host (Diff Pairs, 100/133 MHz) − 1 CLK33 (3.3 V, 33.3 MHz) − 1 REFCLK (3.3 V, 14.318 MHz) − 2 3V48 (3.3 V, 180° Shifted Pairs, 48 MHz) Packaged in a 48-Pin TSSOP Package description The CDC950 is a differential clock synthesizer/ driver that generates HCLK/HCLK, CLK33, 3V48, and REFCLK system clock signals to support a computer system with next generation processors and double data rate (DDR) memory subsystems. DGG PACKAGE (TOP VIEW) CLK33 VDD3.3V 3V48/SelA 3V48/SelB GND VDD3.3V HCLK(0) HCLK(0) GND HCLK(1) HCLK(1) VDD3.3V HCLK(2) HCLK(2) GND HCLK(3) HCLK(3) VDD3.3V REFCLK SPREAD GND XIN XOUT VDD3.3V 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 38 12 37 13 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 SEL100/133 GND AVDD3.3V AGND PWRDWN VDD3.3V HCLK(4) HCLK(4) GND HCLK(5) HCLK(5) VDD3.3V HCLK(6) HCLK(6) GND HCLK(7) HCLK(7) VDD3.3V MultSel0 MultSel1 GND AGND I_REF AVDD3.3V All output frequencies are generated from a 14.318-MHz crystal input. A reference clock input can be provided at the XIN input instead of a crystal. Two phase-locked loops (PLLs) are used to generate the host frequencies and the 48-MHz clock frequencies. On-chip loop filters and internal feedback eliminate the need for external components. The HCLK, CLK33 clock, and 48-MHz clock outputs provide low-skew/low-jitter clock signals for reliable clock operation. All outputs have 3-state capability, which can be selected through control inputs SEL100/133, 3V48/SelA, and 3V48/SelB. The outputs are either differential host clock or 3.3-V single-ended CMOS buffers. With a logic high-level on the PWRDWN terminal, the device operates normally. When a logical low-level input is applied, the device powers down completely with the HOST clock at 2 × IREF, HOSTB is undriven, CLK33, 3V48, and REFCLK outputs are in a low-level output state and 3V48B is in a high-level output state. The host bus can operate at 100 MHz or 133 MHz. Output frequency selection is done with the corresponding setting for SEL100/133 control input. The CLK33 (PCI) frequency is fixed to 33 MHz. Since the CDC950 is based on PLL circuitry, it requires a stabilization time to achieve phase-lock of the PLL. This stabilization time is required following power up, as well as following changes to the SEL inputs. With the use of an external reference clock, this signal must be fixed-frequency and fixed-phase prior to stabilization time starts. The CDC950 is characterized for operation from 0°C to 85°C. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 2001 − 2003, Texas Instruments Incorporated !"#$%&" ' ()##*& %' "! +),-(%&" .%&*/ #".)(&' ("!"#$ &" '+*(!(%&"' +*# &0* &*#$' "! *1%' '&#)$*&' '&%.%#. 2%##%&3/ #".)(&" +#"(*''4 ."*' "& *(*''%#-3 (-).* &*'&4 "! %-- +%#%$*&*#'/ POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 functional block diagram 3-State/Low SEL100/133 48 Control Logic Test SEL100/133 2 3V48/SelB XIN XOUT 1 REFCLK 14.318 MHz (19) 4 Latched 22 23 48-MHz PLL Xtal Oscillator 1 3V48 48 MHz (3) 180° Phase Shift /3 SPREAD 20 Spread Logic CPU PLL /2 /2 PWRDWN MultSel0 MultSel1 I_REF 2 /2 44 1 CLK33 33.3 MHz (1) 8 HCLKs 100/133 MHz (7,10,13,16, 33,36,39,42) 30 29 Control Logic 1 3V48B 48 MHz (4) Sync Logic & Power Down Logic 3V48/SelA 3 2 8 HCLKs 100/133 MHz (8,11,14,17 32,35,38,41) 26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 Terminal Functions TERMINAL I/O DESCRIPTION NAME NO. 3V48/SelA, 3V48/SelB 3, 4 I/O AGND 27, 45 P Analog ground AVDD3.3V CLK33 25, 46 P Power. Analog power supply 1 O 33-MHz reference clock for PCI use, host clock divided by 3 or by 4 GND 5, 9, 15, 21, 28, 34, 40, 47 P Ground HCLK 7, 10, 13, 16, 33, 36, 39, 42 O CPU and host clock outputs [7:0]. These eight differential CPU clock pairs run at 100/133 MHz. The VOH swing amplitude is configured by MultSel0, MultSel1 pins. See Table 5 and Intel’s CK00 document for details. 8, 11, 14, 17, 32, 35, 38, 41 O CPU and host clock outputs [7:0]. These eight differential CPU clock pairs run at 100/133 MHz. The VOH swing amplitude is configured by MultSel0, MultSel1 pins. See Table 5 and Intel’s CK00 document for details. I_REF 26 I Current reference. This pin establishes the reference current for host clock parts. See Table 5 and Intel’s CK00 document for details. MultSel0 30 I See Table 5 and Intel’s CK00 document for details. MultSel1 29 I See Table 5 and Intel’s CK00 document for details. PWRDWN 44 I Power-down input. 3.3-V LVTTL compatible, asynchronous input that requests the device to enter the power-down mode. See Table 2 for details. REFCLK 19 O 14.138-MHz reference clock output: 3.3 V copy of the 14.318-MHz reference clock. SEL100/133 48 I Active low LVTTL level logic select. SEL100/133 is used for enabling 100/133 MHz. Low = 100 MHz, high = 133 MHz SPREAD 20 U Spread spectrum enable. 3.3-V LVTTL compatible, input that enables the spread spectrum mode when held low. See Table 4 for details. VDD3.3V 2, 6, 12, 18, 24, 31, 37, 43 P Power. Power supply XIN 22 I Crystal connection or an external reference frequency input. Connect to either a 14.138-MHz crystal or an external reference signal. XOUT 23 O Crystal connection. An output connection for an external 14.318-MHz crystal. If using an external reference, this pin must be left unconnected. HCLK 48-MHz 180° shifted pair clocks for USB use Logic select pins. Selects the mode of operation, see Table 1 for details. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 3 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 Function Tables Table 1. Select Functions INPUTS OUTPUTS FUNCTION SEL100/133 SelA SelB HCLK, HCLK CLK33 3V48, 3V48 REFCLK 0 0 0 100 MHz 33 MHz 48 MHz 14.318 MHz Active 100 MHz 0 0 1 100 MHz 33 MHz L, H 14.318 MHz 100 MHz mode; PLL48 powerdown 0 1 0 105 MHz 35 MHz 48 MHz 14.318 MHz 100 MHz mode 5% overclocking 0 1 1 Hi-Z Hi-Z Hi-Z Hi-Z 1 0 0 133 MHz 33 MHz 48 MHz 14.318 MHz Active 133 MHz 1 0 1 127 MHz 31.7 MHz 48 MHz 14.318 MHz 133 MHz mode −5% underclocking 1 1 0 133 MHz 33 MHz 48 MHz 14.318 MHz Test mode 1 1 1 TCLK/2 TCLK/8 TCLK/2 TCLK All 3-state outputs Test mode (PLL bypass) Table 2. Enable Functions INPUT OUTPUTS PWRDWN HCLK HCLK CLK33 3V48 3V48 REFCLK 0 2 × IREF Hi-Z L L H L 1 On On On On On On Table 3. Output Buffer Specifications BUFFER NAME VDD RANGE (V) IMPEDANCE (Ω) BUFFER TYPE 3V48, REFCLK 3.135 − 3.465 20−60 TYPE 3 CLK33 3.135 − 3.465 12−55 TYPE 5 HCLK/HCLK 3.135 − 3.465 TYPE X1 Table 4. Spread Spectrum Functions INPUT OUTPUTS SPREAD 4 0 Spread spectrum clocking active, −0.6% at HCLK/HCLK, CLK33 1 Spread spectrum clocking inactive POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 Function Tables (Continued) Table 5. Host/HOST Output Buffer Specifications INPUT MultSel0 MultSel1 BOARD TARGET TRACE/TERM Z REFERENCE R, IREF = VDD/(3 Rr) OUTPUT CURRENT IOH VOH at Z 0 0 60 Ω Rr = 475 1%, I_REF = 2.32 mA 5 × IREF 0.71 V at 60 Ω 0 0 50 Ω 0 1 60 Ω Rr = 475 1%, I_REF = 2.32 mA 5 × IREF 0.59 V at 50 Ω Rr = 475 1%, I_REF = 2.32 mA 6 × IREF 0 1 0.85 V at 60 Ω 50 Ω Rr = 475 1%, I_REF = 2.32 mA 6 × IREF 0.71 V at 50 Ω 1 1 0 60 Ω Rr = 475 1%, I_REF = 2.32 mA 4 × IREF 0.56 V at 60 Ω 0 50 Ω Rr = 475 1%, I_REF = 2.32 mA 4 × IREF 0.47 V at 50 Ω 1 1 60 Ω Rr = 475 1%, I_REF = 2.32 mA 7 × IREF 0.99 V at 60 Ω 1 1 50 Ω Rr = 475 1%, I_REF = 2.32 mA 7 × IREF 0.82 V at 50 Ω 0 0 30 (dc equivalent) Rr = 221 1%, I_REF = 5 mA 5 × IREF 0.75 V at 30 Ω 0 0 25 (dc equivalent) Rr = 221 1%, I_REF = 5 mA 5 × IREF 0.62 V at 25 Ω 0 1 30 (dc equivalent) Rr = 221 1%, I_REF = 5 mA 6 × IREF 0.90 V at 30 Ω 0 1 25 (dc equivalent) Rr = 221 1%, I_REF = 5 mA 6 × IREF 0.75 V at 25 Ω 1 0 30 (dc equivalent) Rr = 221 1%, I_REF = 5 mA 4 × IREF 0.60 V at 30 Ω 1 0 25 (dc equivalent) Rr = 221 1%, I_REF = 5 mA 4 × IREF 0.5 V at 25 Ω 1 1 30 (dc equivalent) Rr = 221 1%, I_REF = 5 mA 7 × IREF 1.05 V at 30 Ω 1 1 25 (dc equivalent) Rr = 221 1%, I_REF = 5 mA 7 × IREF 0.84 V at 25 Ω NOTE: The entries in boldface are the primary system configurations of interest. The outputs should be optimized for these configurations. absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Supply voltage range, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 V to 4.3 V Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to VDD + 0.5 V Voltage range applied to any output in the high-impedance or power-off state, VO (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to VDD + 0.5 V Current into any output in the low state, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 × rated IOL Input clamp current, IIK: (VI < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA (VI > VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Output clamp current, IOK: (VO < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA VO > VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Package thermal impedance, θJA (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89°C/W Maximum power dissipation at TA = 55°C (in still air) (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1070 mW Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0°C to 85°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed. 2. The package thermal impedance is calculated in accordance with EIA/JEDEC Std JESD51, except for the through-hole packages, which use a trace length of zero. 3. The maximum package power dissipation is calculated using a junction temperature of 150°C and a board trace length of 750 mils. For more information, refer to the Package Thermal Considerations application note in the ABT Advanced BiCMOS Technology Data Book, literature number SCBD002. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 PACKAGE DISSIPATION RATING TABLE TA ≤ 25°C DERATING FACTOR† TA = 70°C POWER RATING POWER RATING ABOVE TA = 25°C TA = 85°C POWER RATING DGG 1400 mW 11.2 mW/°C 900 mW 730 mW † This is the inverse of the traditional junction-to-case thermal resistance (RθJA) and uses a board-mounted device at 89°C/W recommended operating conditions (see Note 4) Supply voltages, VDD, AVDD High-level input voltage, VIH MIN NOM‡ MAX 3.135 3.3 3.465 2 Low-level input voltage, VIL 0.8 Input voltage, VI −0.3 CLK33 −18 3V48/SelA and 3V48/SelB −14 REFCLK −14 HCLK/HCLK 0 CLK33 Low-level output current, IOL Reference frequency, f(XIN) Crystal, f(XTAL)¶ § V VDD + 0.3 −40 HCLK/HCLK High-level output current, IOH UNIT mA 12 3V48/SelA and 3V48/SelB 9 REFCLK 9 Test mode 14 Normal mode 13.8 14.318 14.8 MHz Operating free-air temperature, TA 0 85 °C ‡ All nominal values are measured at their respective nominal VDD values. § Reference frequency is a test clock driven on the XIN input during the device test mode or normal mode. In test mode, XIN can be driven externally up to f(XIN) = 16 MHz. If XIN is driven externally, XOUT is floating. ¶ This is a series fundamental crystal with fo = 14.31818 MHz NOTE 4: Unused inputs must be held high or low to prevent them from floating. 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS TYP† MAX UNIT −1.2 V VI = VDD 5 µA VDD = 3.465 V, VI = GND −5 µA VDD = 3.465 V 3V48/SelA, 3V48/SelB = H, SEL100/133 = L, VO = VDD or GND, PWRDWN = H ±10 µA High-impedance-state supply current‡ VDD = 3.465 V 3V48/SelA, 3V48/SelB = H, SEL100/133 = L, PWRDWN = H 19 25 mA VDD Supply 43 47 mA AIDD(PD) PWRDWN state supply current‡ SelA, SelB = L R(ref) = 475 Ω PWRDWN = L AVDD Supply 3.4 4.2 mA Dynamic supply current‡ VDD = 3.465 V, Rref = 475 Ω Ω, IO = 6 x Iref PWRDWN = H SSC = ON/OFF CL = MAX 100 MHz 173 190 IDD(D) 133 MHz 183 200 VIK Input clamp voltage VDD = 3.135 V, II = –18 mA IIH High-level input current All inputs except SelA, SelB VDD = 3.465 V, IIL Low-level input current All inputs except SelA, SelB IOZ High-impedance -state output current All outputs including SelA, SelB IDD(Z) IDD(PD) AlDD Analog power supply current CI Input capacitance§ VDD = 3.465 V MIN mA 100 MHz and SSC off 19 24 133 MHz and SSC off 26 33 100 MHz and SSC on 26 33 133 MHz and SSC on 35 45 VDD = 3.3 V, VI = VDD or GND C(XTAL) Crystal load capacitanceW Effective capacity between CIN and COUT † All typical values are measured at their respective nominal VDD values. ‡ CL = MAX = 5 pF, RS = 33.2 Ω, Rp = 49.9 Ω at HCLK/HCLK (Type X1) CL = MAX = 20 pF, RL = 500 Ω at 48 MHz, REF (Type 3) CL = MAX = 30 pF, RL = 500 Ω at CLK33 (Type 5) § These parameters are assured by design and lab characterization, not 100% production tested. ¶ This is the corresponding capacitive load for the XTAL in this oscillator application (Pierce oscillator) POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 2 5 13.5 22.5 mA pF 7 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) (continued) HCLK/HCLK (Type X1) PARAMETER ro Output resistance VO Output voltage TEST CONDITIONS MIN Output current All combinations of Table 5, See Note 5 Output capacitance VDD = 3.30 V nom NOTE 5: I(NOM) is output current (IOH) of table 5. −7% l(NOM) 7% l(NOM) −12% l(NOM) 12% l(NOM) VO = VDD GND UNIT Ω 1.2 VDD = 3.30 V, ±5% CO MAX 3000 VDD = 3.30 V nom IO TYP† 3.5 V mA pF 3V48, 3V48REFCLK (Type 3) PARAMETER VOH VOL IOH IOL CO High-level output voltage Low-level output voltage High-level output current VDD = min to max, VDD = 3.135 V, VDD = min to max, VDD = 3.135 V, VDD = 3.135 V, VDD = 3.3 V, VDD = 3.465 V, Low-level output current VDD = 3.135 V, VDD = 3.3 V, Output capacitance VDD = 3.465 V, VDD = 3.3 V, High state Zo TEST CONDITIONS Output impedance Low state VO = 0.5 VDD, VO = 0.5 VDD, IOH = –1 mA IOH = −14 mA VO = 1 V VO = 1.65 V VO = 3.135 V VO = 1.95 V POST OFFICE BOX 655303 TYP† MAX 0.1 0.18 V 0.4 −29 −37 −11 −23 mA 29 VO = 1.65 V VO = 0.4 V 39 16 27 VO = VDD or GND VO/IOH 4.5 20 40 60 VO/IOL 20 40 60 • DALLAS, TEXAS 75265 UNIT VDD – 0.1 2.4 IOL = 1 mA IOL = 9 mA † All typical values are measured at their respective nominal VDD values. 8 MIN 7 pF Ω SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 electrical characteristics over recommended operating free-air temperature range (unless otherwise noted) (continued) CLK33 (Type 5) PARAMETER TEST CONDITIONS VOH High-level output voltage VDD = min to max, VDD = 3.135 V, IOH = –1 mA IOH = −18 mA VOL Low-level output voltage VDD = min to max, VDD = 3.135 V, IOL = 1 mA IOL = 12 mA VDD = 3.135 V, VDD = 3.3 V, VO = 1 V VO = 1.65 V VDD = 3.465 V, VDD = 3.135 V, VO = 3.135 V VO = 1.95 V IOH High-level output current MIN TYP† MAX VDD – 0.1 2.4 0.1 0.15 0.4 −53 −16 −33 mA 30 Low-level output current VDD = 3.3 V, VDD = 3.465 V, VO = 1.65 V VO = 0.4 V CO Output capacitance Output impedance VO = VDD or GND VO/IOH 4.5 Zo VDD = 3.3 V, VO = 0.5 VDD, 12 35 55 VO/IOL 12 35 55 Low state VO = 0.5 VDD, † All typical values are measured at their respective nominal VDD values. V −33 IOL High state UNIT 51 21 38 7.5 pF Ω switching characteristics, VDD = 3.135 V to 3.465 V, TA = 0°C to 85°C PARAMETER FROM (INPUT) TO (OUTPUT) TEST CONDITIONS MIN TYP MAX UNIT VOH + 200 VOL − 200 mV V(over) V(under) Overshoot† Undershoot† HCLK/HCLK 0.7-V amplitude V(over) V(under) Overshoot† Undershoot† Other clocks, CL = worst case tPZL Output enable time from low level SEL100/133 All outputs SEL100/133 ↑ Rref = 475 Ω 10 tPZH Output enable time to high level SEL100/133 All outputs SEL100/133 ↑ Rref = 475 Ω 10 tPHZ Output disable time from high level SEL100/133 All outputs SEL100/133 ↓ Rref = 475 Ω 10 tPLZ Output disable time from low level SEL100/133 All outputs Stabilization time‡ VDD All outputs ts SEL100/133 ↓ Rref = 475 Ω After power up GND − 0.7 VDD + 0.7 V ns 10 0.1 ms PWRDWN All outputs From PWRDWN ↑ 0.25 ms † These parameters are assured by design and lab characterization, not 100% production tested. ‡ Stabilization time is the time required for the integrated PLL circuit to obtain phase lock of its feedback signal to its reference signal. In order for phase lock to be obtained, a fixed-frequency, fixed-phase reference signal must be present at XIN. Until phase lock is obtained, the specifications for propagation delay and skew parameters given in the switching characteristics tables are not applicable. Stabilization time is defined as the time since VDD achieves its nominal operating level (3.3 V) or PWRDWN transition from a low to a high level (2 V) until the output frequency is stable and operating within specification. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 switching characteristics, VDD = 3.135 V to 3.465 V, TA = 0°C to 85°C (continued) HCLK/HCLK (Type X1), CL = 2 pF, Rref = 475 Ω, 6 x Rref PARAMETER TEST CONDITIONS HCLK clock period‡ f(HCLK) = 100 MHz f(HCLK) = 133 MHz Tjit(cc) Cycle-to-cycle jitter f(HCLK) = 100 or 133 MHz tdc Duty cycle f(HCLK) = 100 or 133 MHz, Crossing point tsk(o) HCLK bus skew f(HCLK) = 100 or 133 MHz, Crossing point tr tf Rise time† Fall time† 0.7-V amplitude VO = 0.14 V to 0.56 V VO = 0.14 V to 0.56 V v(cross) Cross point voltages† 0.7-V amplitude f(HCLK) = 100 or 133-MHz HCLK and HCLK MIN TYP MAX 10 10.2 7.5 7.65 SSC off −80 80 SSC on −110 110 45% 55% 70 UNIT ns ps ps 175 700 175 700 45% VOH 55% VOH V ps † These parameters are assured by design and lab characterization, not 100% production tested. ‡ The average over any 1-µs period of time is greater than the minimum specified period. CLK33 (Type 5), CL = 30 pF, RL = 500 Ω PARAMETER Tjit(cc) t(dc) PCI clock period† Cycle-to-cycle jitter Duty cycle TEST CONDITIONS MIN TYP MAX UNIT f(HCLK) = 100 or 133 MHz 30 30.06 30.6 ns f(HCLK) = 100 or 133 MHz f(CLK33) = 33.3 MHz −150 150 ps 45% 55% 0.5 2 0.5 2 tr Rise time VO = 0.4 V to 2.4 V tf Fall time VO = 0.4 V to 2.4 V † The average over any 1-µs period of time is greater than the minimum specified period. ns 3V48 (Type 3), CL = 20 pF, RL = 500 Ω PARAMETER TEST CONDITIONS 3V48 clock period f(HCLK) = 100 or 133 MHz Tjit(cc) tdc Cycle-to-cycle jitter f(HCLK) = 100 or 133 MHz f(3V48) = 48 MHz tr tf Rise time Duty cycle Fall time MIN TYP MAX 20.83 VO = 0.4 V to 2.4 V VO = 0.4 V to 2.4 V UNIT ns −300 300 45% 55% 1 4 1 4 ps ns REF (Type 3), CL = 20 pF, RL = 500 Ω PARAMETER REF clock period TEST CONDITIONS f(REF) = 14.318 MHz f(HCLK) = 100 or 133 MHz Tjit(cc) t(dc) Cycle-to-cycle jitter tr tf Rise time f(REF) = 14.318 MHz VO = 0.4 V to 2.4 V Fall time VO = 0.4 V to 2.4 V 10 Duty cycle POST OFFICE BOX 655303 MIN TYP MAX 69.84 • DALLAS, TEXAS 75265 −0.5 0.5 45% 55% 1 4 1 4 UNIT ns ns SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 PARAMETER MEASUREMENT INFORMATION RL = 500 Ω From Output Under Test VO(REF) S1 tPLH/tPHL tPLZ/tPZL tPHZ/tPZH GND RL = 500 Ω CL (see Note A) S1 TEST OPEN Open VO(REF) GND LOAD CIRCUIT For tpd and tsk tw From Output Under Test 3V Test Point VIH(REF) VT(REF) VIL(REF) Input CL (see Note A) 0V LOAD CIRCUIT for tr and tf VOLTAGE WAVEFORMS 3V Input VT(REF) VT(REF) Output Enable (High-Level Enabling) 0V tPLH Output tPHL VOH VIH(REF) VT(REF) VIL(REF) VOL tr tw(high) tf Output Waveform 1 S1 at 6 V (see Note B) Output Waveform 2 S1 at GND (see Note B) tw(low) VDD VT(REF) VT(REF) 0V tPZL tPLZ ≈3V VT(REF) VOL + 0.3 V tPHZ tPZH VOL VOH VOH − 0.3 V VT(REF) ≈0V VOLTAGE WAVEFORMS NOTES: A. CL includes probe and jig capacitance. CL = 2 pF (HCLK, HCLK), CL = 20 pF (48 MHz, REF), CL = 30 pF (CLK33). B. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control. Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control. C. All input pulses are supplied by generators having the following characteristics: PRR ≤ 14.318 MHz, ZO = 50 Ω, tr ≤ 2.5 ns, tf ≤ 2.5 ns. D. The outputs are measured one at a time with one transition per measurement. PARAMETER 3.3-V INTERFACE VIH(REF) High-level reference voltage 2.4 VIL(REF) Low-level reference voltage 0.4 VT(REF) Input threshold reference voltage 1.5 VO(REF) Off-state reference voltage UNIT V 6 Figure 1. Load Circuit and Voltage Waveforms POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 11 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 APPLICATION INFORMATION VDD R(S1) = 33 Ω HCLK TLA HCLK MultSel0 CDC950 R(T1) = 49.9 Ω MultSel1 R(S1) = 33 Ω HCLK TLB HCLK RI(REF) = 475 Ω R(T1) = 49.9 Ω CL = 2 pF CL = 2 pF CL Represents CBOARD and Cjig ZTLA = ZTLB = 50 Ω Figure 2. Load Circuit for HCLK Bus spread spectrum clock (SSC) implementation for CDC950 Simultaneously switching at a fixed frequency generates a significant power peak at the selected frequency, which in turn causes EMI disturbance to the environment. The purpose of the internal frequency modulation of the CPU-PLL allows energy to be distributed to many different frequencies which reduces the power peak. A typical characteristic for a single frequency spectrum and a frequency modulated spectrum is shown in Figure 3. ∆ Maximum Peak Non-SSC SSC δ of f(nom) f(nom) Figure 3. Frequency Power Spectrum With and Without the Use of SSC The modulated spectrum has its distribution (left side) associated with the single-frequency spectrum which indicates a down-spread modulation. The peak reduction depends on the modulation scheme and modulation profile. System performance and timing requirements are the limiting factors for actual design implementations. The implementation was driven to keep the average clock frequency close to its upper specification limit. The modulation amount was set to approximately –0.6%. To allow a downstream PLL to follow the frequency modulated signal, the bandwidth of the modulation signal is limited in order to minimize SSC induced tracking skew jitter. The modulation frequency is approximately 31 kHz. 12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SCAS646B − FEBRUARY 2001 − REVISED OCTOBER 2003 MECHANICAL DATA DGG (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE 48 PINS SHOWN 0,27 0,17 0,50 48 0,08 M 25 6,20 6,00 8,30 7,90 0,15 NOM Gage Plane 1 0,25 24 0°−ā 8° A 0,75 0,50 Seating Plane 0,15 0,05 1,20 MAX PINS ** 0,10 48 56 64 A MAX 12,60 14,10 17,10 A MIN 12,40 13,90 16,90 DIM 4040078 / F 12/97 NOTES: A. B. C. D. All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions do not include mold protrusion not to exceed 0,15. Falls within JEDEC MO-153 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 13 PACKAGE OPTION ADDENDUM www.ti.com 13-Sep-2005 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty CDC950DGG ACTIVE TSSOP DGG 48 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR CDC950DGGG4 ACTIVE TSSOP DGG 48 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR CDC950DGGR ACTIVE TSSOP DGG 48 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR CDC950DGGRG4 ACTIVE TSSOP DGG 48 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 MECHANICAL DATA MTSS003D – JANUARY 1995 – REVISED JANUARY 1998 DGG (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE 48 PINS SHOWN 0,27 0,17 0,50 48 0,08 M 25 6,20 6,00 8,30 7,90 0,15 NOM Gage Plane 1 0,25 24 0°– 8° A 0,75 0,50 Seating Plane 0,15 0,05 1,20 MAX PINS ** 0,10 48 56 64 A MAX 12,60 14,10 17,10 A MIN 12,40 13,90 16,90 DIM 4040078 / F 12/97 NOTES: A. B. C. D. All linear dimensions are in millimeters. This drawing is subject to change without notice. Body dimensions do not include mold protrusion not to exceed 0,15. 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