DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Preliminary Information Replaces August 2001, version DS5464-3.0 FEATURES DS5464-4.0 October 2001 KEY PARAMETERS ■ 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE(sat) (typ) 3.2V ■ Non Punch Through Silicon IC (max) 200A ■ Isolated MMC Base with AlN Substrates IC(PK) (max) 400A APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200PHM33-A000 is a half bridge 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. 3300V 1(E1/C2) 2(C1) 3(E2) 5(E1) 7(E2) 4(G1) 6(G2) 8(C1) Fig. 1 Half bridge circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM200PHM33-A000 Note: When ordering, please use the whole part number. Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM200PHM33-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V ±20 V Continuous collector current Tcase = 80˚C 200 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 2315 W Diode I2t value (Diode arm) VR = 0, tp = 10ms, Tvj = 125˚C 20 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V QPD Partial discharge - per module IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS 10 pC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): AlN AlSiC 33mm 20mm 175 Symbol Parameter Rth(j-c) Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation - Min. Typ. Max. Units - - 54 ˚C/kW - - 108 ˚C/kW - - 16 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode (per switch) Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M5 - - 4 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM200PHM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 15 mA Gate leakage current VGE = ±20V, VCE = 0V - - 2 µA VGE(TH) Gate threshold voltage IC =20mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 200A - 3.2 - V VGE = 15V, IC = 200A, , Tcase = 125˚C - 4.0 - V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - 200 - A IFM Diode maximum forward current tp = 1ms - 400 - A VF Diode forward voltage IF = 200A - 2.5 - V IF = 200A, Tcase = 125˚C - 2.5 - V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz - 45 - nF Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz - 2.5 - nF LM Module inductance - per switch - - 30 - nH Internal transistor resistance - per switch - - 0.54 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 2500V, I1 - 1300 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 1100 - A IEC 60747-9 Note: L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 200A - 1300 - ns Fall time VGE = ±15V - 200 - ns EOFF Turn-off energy loss VCE = 1800V - 170 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) =10Ω - 640 - ns Rise time Cge = 33nF - 250 - ns EON Turn-on energy loss L ~ 100nH - 290 - mJ Qg Gate charge - 6 - µC Qrr Diode reverse recovery charge IF = 200A, VR = 1800V, - 115 - µC Irr Diode reverse current dIF/dt = 1100A/µs - 165 - A - 130 - mJ Min. Typ. Max. Units IC = 200A - 1600 - ns Fall time VGE = ±15V - 250 - ns EOFF Turn-off energy loss VCE = 1800V - 240 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) =10Ω - 640 - ns Rise time Cge = 33nF - 300 - ns EON Turn-on energy loss L ~ 100nH - 420 - mJ Qrr Diode reverse recovery charge IF = 200A, VR = 1800V, - 190 - µC Irr Diode reverse current dIF/dt = 1000A/µs - 185 - A - 220 - mJ Parameter Symbol td(off) tf tr EREC Turn-off delay time Test Conditions Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr EREC Turn-off delay time Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM200PHM33-A000 TYPICAL CHARACTERISTICS 400 400 Common emitter. Tcase = 25˚C Common emitter. Tcase = 125˚C 300 Collector current, IC - (A) Collector current, IC - (A) 300 200 200 100 100 VGE = 20V 15V 12V 10V 0 0 1 2 3 4 VGE = 20V 15V 12V 10V 5 0 1 6 Fig. 3 Typical output characteristics 3 4 5 6 7 8 Fig. 4 Typical output characteristics 700 500 Conditions: Tc = 125°C I = 200A 600 C Vcc = 1800V Cge = 33nF Switching energy, Esw - (mJ) Conditions: Tc = 125°C, Rg = 10 Ohms, Vcc = 1800V, 400 Cge = 33nF Switching energy, Esw - (mJ) 2 Collector-emitter voltage, Vce - (V) Collector-emitter voltage, Vce - (V) 300 200 500 400 300 200 100 Eon Eoff Erec 0 0 50 100 150 Collector current, IC - (A) 200 Fig. 5 Typical switching energy vs collector current 6/10 100 0 5 Eon Eoff Erec 10 15 20 25 30 Gate resistance, Rg - (Ohms) Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 400 500 Tj = 25˚C Tj = 125˚C 350 400 Collector current, IC - (A) Forward current, IF - (A) 300 250 200 150 Chip 300 Module 200 100 100 Tcase = 125˚C Vge = ±15V Rg(min) = 10Ω 50 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 Forward voltage, VF - (V) 500 1000 1500 2000 2500 3000 3500 Collector emitter voltage, Vce - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 1000 400 Tj = 125˚C 100 250 IC(max) DC 10 50 µs s tp = 1 s m 150 = 0µ 10 200 tp = Collector current, IC - (A) 300 tp Reverse recovery current, Irr - (A) 350 1 100 50 0 0 500 1000 1500 2000 2500 Reverse voltage, VR - (V) 3000 Fig. 9 Diode reverse bias safe operating area 3500 0.1 1 Tvj = 125˚C, Tc = 80˚C 10 100 1000 Collector emitter voltage, Vce (V) Fig. 10 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 10000 7/10 DIM200PHM33-A000 350 300 DC collector current, IC - (A) Transient thermal impedance, Zth (j-c) - (°C/kW ) 1000 Diode 100 Transistor 10 IGBT Diode 1 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 2 3 1.4989 7.8608 11.1109 0.0876 3.7713 33.5693 2.9545 15.6459 22.2515 0.0843 3.7205 33.2138 0.1 Pulse width, tp - (s) 1 Fig. 11 Transient thermal impedance 8/10 4 33.6178 236.8023 67.3233 236.5275 10 250 200 150 100 50 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig. 12 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 750g Module outline type code: P Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 DIM200PHM33-A000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5464-4 Issue No. 4.0 August 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com