DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.2 December 2007 (LN25834) FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction Isolated MMC Base with AlN Substrates High Thermal Cycling Capability High isolation module KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A. Fig. 1 Chopper circuit diagram The DIM300XCM45-F000 is a 4500V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Outline type code: X (See package details for further information) Fig. 2 Electrical connections - (not to scale) Order As: DIM300XCM45-F000 Note: When ordering, please use the complete part number !"##$%&'())$(&&(&&!"##$%&'())$(&&((& ***+,+ ,-.,!)#),/! DIM300XCM45-F000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ’Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Units 4500 V ±20 V VCES Collector-emitter voltage VGES Gate-emitter voltage IC Continuous collector current Tcase =100 ° C 300 A IC(PK) Peak collector current 1ms, Tcase=115 ° C 600 A Pmax Max.transistor power dissipation Tcase =25 °C, Tj =150 ° C 5.2 kW Diode I t value (Diode arm) VR =0,tp =10ms,Tj =125 °C 51 kA s Isolation voltage-per module Partial discharge-per module Commoned terminals to base plate. AC RMS,1 min,50Hz 10.2 kV 10 pC 2 2 It Visol QPD VGE =0V Max. IEC1287.V1 =6900V, V2 =5100V, 50Hz RMS 2 THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Critical Tracking Index) > 600 Symbol Rth(j-c) Rth(j-c) Rth(c-h) Tj Tstg Parameter Test Conditions Typ. Max Units - 24 ° C/kW - 48 ° C/kW - 8 ° C/kW Thermal resistance -transistor (per switch) Thermal resistance -diode (per switch) Thermal resistance -case to heatsink (per module) Continuous dissipation junction to case Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Junction temperature Transistor - - 150 °C Diode - - 125 °C -40 - 125 °C - - 5 Nm - - 2 Nm - - 10 Nm Storage temperature range Screw torque Mounting M6 Electrical connections M4 Electrical connections M8 2/7 Min Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300XCM45-F000 ELECTRICAL CHARACTERISTICS T case = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ VGE =0V,VCE =VCES Units 2 mA 60 mA 4 uA 7.0 V Collector cut-off current ICES VGE =0V,VCE =VCES ,Tcase =125 °C IGES VGE(TH) VCE(sat) Max † IF IFM Gate leakage current VGE = ± 20V,VCE =0V Gate threshold voltage IC =80mA,VGE =VCE Collector-emitter saturation voltage Free-wheel/Anti-parallel Diode forward current Free-wheel/Anti-parallel Diode maximum forward current 5.5 6.5 VGE =15V,IC =300A 2.9 V VGE =15V,IC =300A,TVJ =125 °C 3.5 V DC 300 A tp =1ms 600 A Free-wheel/Anti-parallel Diode forward voltage IF =300A 3.0 V IF =300A,TVJ =125 °C 3.1 V Cies Input capacitance VCE =25V,VGE =0V,f =1MHz 65 nF Cres Reverse transfer capacitance VCE =25V,VGE =0V,f =1MHz 0.9 nF LM Inductance per arm -- 30 nH RINT Internal transistor resistance 270 µ 1400 A 1250 A VF Tj 125 °C,VCC 3000V, SCData Short circuit I SC t p = 10 us, VCE(max)=VCES – L*.di/dt IEC 60747-9 I1 I2 Note: † Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + L M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3/7 DIM300XCM45-F000 ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol Parameter td(off) Turn-off delay time tf Test Conditions Min Typ. Max Units IC =300A 5.0 us Fall time VGE =±15V 250 ns EOFF Turn-off energy loss VCE =2250V 750 mJ td(on) Turn-on delay time RG(ON) =10 RG(OFF)=22 850 ns tr Rise time Cge =55nF 220 ns EON Turn-on energy loss L ~200nH 900 mJ Qg Gate charge 10 uC IF =300A,VCE =2250V, 240 uC dIF/dt =1500A/us 350 A 300 mJ Qrr Irr Erec Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy Tcase = 125°C unless stated otherwise Symbol Parameter td(off) Turn-off delay time tf Test Conditions Min Typ. Max Units IC =300A 5.2 us Fall time VGE =±15V 250 ns EOFF Turn-off energy loss VCE =2250V 850 mJ td(on) Turn-on delay time RG(ON) =10 RG(OFF)=22 800 ns tr Rise time Cge =55nF 220 ns EON Turn-on energy loss L ~200nH 1350 mJ IF =300A,VCE =2250V, 430 uC dIF/dt =1500A/us 410 A 530 mJ Qrr Irr Erec 4/7 Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300XCM45-F000 600 500 Tcase = 25° C Tcase =125° C 450 500 Collector current, Ic (A) Collector current, Ic (A) 400 350 300 250 200 150 Vg=10V Vg=12V Vg=15V Vg=20V 100 50 400 300 200 Vge=10V Vge=12V Vge=15V Vge=20V 100 0 0 0.0 1.0 2.0 3.0 4.0 0.0 5.0 1.0 Collector-emitter voltage, Vce (V) Fig. 3 Typical output characteristics 1600 1000 4.0 5.0 6.0 4000 Conditions: Vcc = 2250V Tc = 125° C Cge = 55nF Vge = +/- 15V Ic = 300A 3500 3000 Switching energy, - Esw (mJ) Switching energy, Esw (mJ) 1200 3.0 Fig. 4 Typical output characteristics Conditions Vcc = 2250V Tc = 125° C Cge = 55nF Vge = +/- 15V Rg(on) = 10 Rg(off) = 22 1400 2.0 Collector-emitter voltage, Vce (V) 800 600 400 Eon (mJ) Eoff (mJ) 2000 Erec (mJ) 1500 1000 Eon (mJ) Eoff (mJ) Erec (mJ) 200 2500 500 0 0 50 100 150 200 250 300 0 0 Collector current, Ic (A) Fig.5 Typical switching energy vs collector current 10 20 40 50 60 Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 30 Gate resistance, Rg (Ohms) 5/7 DIM300XCM45-F000 600 25ºC 550 700 125ºC Tcase = 125° C Vge = +/-15V Rg(off) =22ohms 500 600 450 Collector current, Ic (A) Forward current, IF (A) 400 350 300 250 200 150 500 Module Chip 400 300 200 100 100 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 4000 5 Forward voltage, VF (V) 4200 4400 4600 4800 5000 Collector emitter voltage, Vce (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 500 Tj = 125 ºC Reverse recoery current, Irr-(A) 450 400 350 300 250 200 150 100 50 0 0 1000 2000 3000 4000 5000 Reverse voltage, VR -(V) Transient thermal impedance, Zthj-c (°C/kW) 100 Rth IGBT Rth Diode 10 R IGBT R Diode 1 0.001 0.01 1.29 0.14 0.645 0.14 4.5 4.12 2.25 4.12 0.1 5.21 23.41 2.605 23.41 12.93 146.3 6.465 146.3 1 10 Time, (s) Fig. 9 Diode reverse bias safe operating area 6/7 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM300XCM45-F000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1100g Module outline type code: X Fig. 11 Outline drawing Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7/7 DIM300XCM45-F000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Tel: +44(0)1522 500500 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company’s conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com