DSF21060SV DSF21060SV Fast Recovery Diode Replaces March 1998 version, DDS4231-2.3 DS4231-3.0 January 2000 KEY PARAMETERS VRRM 6000V IF(AV) 1690A IFSM 16000A Qr 1200µC trr 6.5µs APPLICATIONS ■ Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge. VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DSF21060SV55 6000 5900 5800 5700 5600 5500 Conditions VRSM = VRRM + 100V Outline type code: V. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Max. Units Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 1690 A IF(RMS) RMS value Tcase = 65oC 2655 A Continuous (direct) forward current Tcase = 65oC 2460 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 65oC 1090 A IF(RMS) RMS value Tcase = 65oC 1710 A Continuous (direct) forward current Tcase = 65oC 1520 A IF 1/9 DSF21060SV SURGE RATINGS Symbol IFSM I2t IFSM I2t IFSM I2t Parameter Conditions Max. Units 12.8 kA 819.2 x 103 A2s 16.0 kA 1280 x 103 A2s - kA - A2s Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 125oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 125oC I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 100% VRRM, Tj = 125oC I2t for fusing THERMAL AND MECHANICAL DATA Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Min. Max. Units dc - 0.0075 o Anode dc - 0.015 o Cathode dc - 0.015 o Double side - 0.002 o Single side - 0.004 o - 130 o C/W C/W Single side cooled Rth(c-h) C/W C/W Tvj Virtual junction temperature Tstg Storage temperature range -55 150 o Clamping force 36.0 44.0 kN - 2/9 Thermal resistance - case to heatsink Clamping force 40.0kN with mounting compound C/W Forwartd (conducting) C C DSF21060SV CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units VFM Forward voltage At 600A peak, Tcase = 25oC - 3.0 V IRRM Peak reverse current At VRRM, Tcase = 125oC - 75 mA - 6.5 µs trr Reverse recovery time Recovered charge (50% chord) IF = 1000A, diRR/dt = 100A/µs - 1500 µC IRM Reverse recovery current Tcase = 125oC, VR = 100V - 460 A K Soft factor 1.8 - - QRA1 VTO Threshold voltage At Tvj = 125oC - 1.625 V rT Slope resistance At Tvj = 125oC - 0.66 mΩ Forward recovery voltage di/dt = 1000A/µs, Tj = 100oC 140 - V VFRM DEFINITION OF K FACTOR AND QRA1 QRA1 = 0.5x IRR(t1 + t2) dIR/dt t1 t2 k = t1/t2 τ 0.5x IRR IRR 3/9 DSF21060SV CURVES 7000 Measured under pulse conditions 6000 Instantaneous forward current IF - (A) 5000 4000 3000 Tj = 150˚C Tj = 25˚C 2000 1000 0 0 2.0 4.0 6.0 8.0 Instantaneous forward voltage VF - (V) Fig. 1 Maximum (limit) forward characteristics 4/9 10.0 DSF21060SV 500 Measured under pulse conditions Instantaneous forward current IF - (A) 400 300 Tj = 150˚C Tj = 25˚C 200 100 0 1.0 1.5 2.0 2.5 3.0 Instantaneous forward voltage VF - (V) Fig. 2 Maximum (limit) forward characteristics 500 Current waveform VFR Voltage waveform Transient forward votage VFP - (V) 400 δy di = δy dt δx δx 300 Tj = 100˚C limit 200 Tj = 25˚C limit 100 0 0 1000 2000 3000 4000 Rate of rise of forward current dIF/dt - (A/µs) Fig. 3 Transient forward voltage vs rate of rise of forward current 5/9 DSF21060SV 100000 IF QS = ∫ Conditions: 50µs 0 Tj = 125˚C, Reverse recovered charge QS - (µC) QS VR = 100V tp = 1ms dIR/dt 10000 IRR IF = 4000A IF = 2000A IF = 1000A IF = 500A IF = 200A 1000 IF = 100A 100 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig. 4 Recovered charge 10000 Conditions: Tj = 125˚C, Reverse recovery current IRR - (A) VR = 100V IF = 4000A IF = 2000A IF = 1000A IF = 500A 1000 IF = 200A IF = 100A 100 10 1 10 100 Rate of rise of reverse current dIR/dt - (A/µs) 1000 Fig. 5 Typical reverse recovery current vs rate of rise of reverse current 6/9 DSF21060SV Thermal impedance - ˚C/W 0.1 d.c.Double side cooled 0.01 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 Time - (s) Fig. 5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) 7/9 DSF21060SV PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (In both electrodes) Cathode 27.0 25.4 Ø112.5 max Ø73 nom Ø73 nom Anode Nominal weight: 1100g Clamping force: 43kN ±10% Package outine type code: V ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 Recommendations for clamping power semiconductors AN4839 Thyristor and diode measurement with a multi-meter AN4853 Use of V , r on-state characteristic AN5001 TO 8/9 T DSF21060SV POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS4231-3 Issue No. 3.0 January 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9