GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 400A 800A APPLICATIONS ■ High Power Inverters ■ Motor Controllers ■ Induction Heating ■ Resonant Converters 2(E) 5(E1) 1(C) 4(C1) 3(G1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400LSS18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 4 ORDERING INFORMATION Order As: 2 5 1 3 GP400LSS18 Note: When ordering, please use the whole part number. Outline type code: L (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/11 GP400LSS18 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions VGE = 0V - Max. Units 1800 V ±20 V Continuous collector current DC, Tcase = 75˚C 400 A IC(PK) Peak collector current 1ms, Tcase = 80˚C 800 A Pmax Max. power dissipation Tcase = 25˚C (Transistor), Tj = 150˚C 2980 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V Min. Max. Units THERMAL AND MECHANICAL RATINGS Test Conditions Parameter Symbol Rth(j-c) Thermal resistance - transistor DC junction to case - 40 ˚C/kW Rth(j-c) Thermal resistance - diode DC junction to case - 70 ˚C/kW Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm - 15 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm (with mounting grease) Tj Tstg - 2/11 Junction temperature - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 10 mA Gate leakage current VGE = ±20V, VCE = 0V - - ±2 µA VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 4 - 7.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 400A - 3.5 4.0 V VGE = 15V, IC = 400A, Tcase = 125˚C - 4.3 5.0 V Parameter Symbol ICES IGES Collector cut-off current Test Conditions IF Diode forward current DC - - 400 A IFM Diode maximum forward current tp = 1ms - - 800 A VF Diode forward voltage IF = 4000A, Tcase = 80˚C - 2.2 2.5 V IF = 400A, Tcase = 125˚C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 45 - nF - 15 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/11 GP400LSS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units IC = 400A - 800 900 ns Fall time VGE = ±15V - 100 130 ns EOFF Turn-off energy loss VCE = 900V - 100 130 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 650 750 ns L ~ 100nH - 200 300 ns - 100 150 mJ - 80 100 µC Min. Typ. Max. Units IC = 400A - 900 1100 ns Fall time VGE = ±15V - 150 200 ns EOFF Turn-off energy loss VCE = 900V - 120 150 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 900 1100 ns L ~ 100nH - 250 300 ns - 170 210 mJ - 130 160 µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 400A, VR = 900V, dIF/dt = 2500A/µs Tcase = 25˚C unless stated otherwise. Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 400A, VR = 900V, dIF/dt = 2500A/µs 4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS18 TYPICAL CHARACTERISTICS Vge = 20/15/12V Vge = 20/15/12V 800 800 Common emitter Tcase = 25˚C 700 700 600 Vge = 10V Collector current, IC - (A) Collector current, Ic - (A) 600 500 400 300 400 300 200 100 100 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 0 0 7.0 Fig.3 Typical output characteristics 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage, Vce - (V) 9.0 10.0 350 Tcase = 25˚C VGE = ±15V VCE = 900V 300 250 Turn-on energy, EON - (mJ) Turn-on energy, EON - (mJ) 1.0 Fig.4 Typical output characteristics 350 300 Vge = 10V 500 200 0 0 Common emitter Tcase = 125˚C A 200 150 B 100 Tcase = 125˚C VGE = ±15V VCE = 900V A 250 200 B 150 C 100 C A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.7Ω 50 0 0 50 100 150 200 250 300 Collector current, IC - (A) 350 Fig.5 Typical turn-on energy vs collector current 400 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.7Ω 50 0 0 50 100 150 200 250 300 Collector current, IC - (A) 400 Fig.6 Typical turn-on energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 350 5/11 GP400LSS18 150 A 200 B 100 Turn-off energy, EOFF - (mJ) Turn-off energy, EOFF - (mJ) 125 240 Tcase = 25˚C VGE = ±15V VCE = 900V C 75 50 25 0 0 100 150 250 300 200 Collector current, IC - (A) 350 80 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.7Ω 50 100 150 250 300 200 Collector current, IC - (A) 350 400 2500 VGE = ±15V VCE = 900V Tcase = 125˚C VGE = ±15V VCE = 800V Rg = 4.7Ω Tcase = 125˚C 60 2000 tf 55 50 Switching times, ts - (ns) Diode turn-off energy, Eoff(diode) - (mJ) C 120 Fig.8 Typical turn-off energy vs collector current 75 65 B 0 0 400 Fig.7 Typical turn-off energy vs collector current 70 A 160 40 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 4.7Ω 50 Tcase = 125˚C VGE = ±15V VCE = 900V 45 1500 40 Tcase = 25˚C 35 30 td(off) 1000 25 20 15 td(on) 500 10 5 0 50 100 150 200 250 300 350 400 Collector current, IT - (A) Fig.9 Typical diode reverse recovery charge vs collector current 6/11 0 0 tr 50 100 150 200 250 300 Collector current, IC - (A) 350 400 Fig.10 Typical switching characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS18 1000 800 900 700 Tj = 25˚C 800 700 Collector current, IC - (A) Foward current, IF - (A) 600 500 Tj = 125˚C 400 300 600 500 400 300 200 200 100 100 Tcase = 125˚C Vge = ±15V Rg(min) = 4.7Ω Rg(min) : Minimum recommended value 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 0 0 3.5 Fig.11 Diode typical forward characteristics Fig.12 Reverse bias safe operating area 10000 IC max. (single pulse) IC . ax m 100 50µs D C 100µs s) u uo in t on (c 10 tp = 1ms Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 1000 Collector current, IC - (A) 2000 1200 400 800 1600 Collector-emitter voltage, Vce - (V) Diode Transistor 10 1 0.1 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig.13 Forward bias safe operating area 10000 1 10 100 Pulse width, tp - (ms) 10000 Fig.14 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 7/11 GP400LSS18 900 800 600 700 DC collector current, IC - (A) Inverter phase current, IC(PK) - (A) 700 PWM Sine Wave Power Factor = 0.9, Modulation Index =1 600 500 400 300 500 400 300 200 200 Conditions: Tj = 125˚C, Tcase = 75˚C Rg = 4.7Ω, VCC = 900V 100 100 0 1 10 fmax - (kHz) Fig.15 3-Phase inverter operating frequency 8/11 20 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig.16 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS18 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 46.5 46.5 3.5x6 4x Ø6.5 27 6x5.5 16 4 1 20 61.4 48 40 5 2 3 20 24 29 2x M6 23 36max 3x M4 5 106.4 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M4): 2Nm (17lbs.ins) Module outline type code: L Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/11 GP400LSS18 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. 10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS18 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5305-2 Issue No. 2.0 November 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 11/11