GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 FEATURES ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200V Rating ■ 400A Per Module DS5306-2.3 November 2000 KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 400A 800A APPLICATIONS ■ High Power Inverters ■ Motor Controllers ■ Induction Heating ■ Resonant Converters 2(E) 5(E1) 1(C) 4(C1) 3(G1) The Powerline range of high power modules includes half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400LSS12 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. ORDERING INFORMATION Fig. 1 Single switch circuit diagram 4 2 5 1 3 Order As: GP400LSS12 Note: When ordering, please use the compete part number. Outline type code: L (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP400LSS12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Collector current DC, Tcase = 75˚C 400 A IC(PK) Peak collector current 1ms, Tcase = 80˚C 800 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 2980 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V Min. Max. Units - 42 ˚C/kW - 80 ˚C/kW - 15 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm IC THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/10 Junction temperature Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 25 mA Gate leakage current VGE = ±20V, VCE = 0V - - ±2 µA VGE(TH) Gate threshold voltage IC = 20mA, VGE = VCE 4.5 - 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 400A - 2.7 3.5 V VGE = 15V, IC = 400A, , Tcase = 125˚C - 3.2 4 V Parameter Symbol ICES IGES Collector cut-off current Test Conditions IF Diode forward current DC, Tcase = 50˚C - - 400 A IFM Diode maximum forward current tp = 1ms, Tcase = 80˚C - - 800 A VF Diode forward voltage IF = 400A - 2.2 2.4 V IF = 400A, Tcase = 125˚C - 2.3 2.5 V VCE = 25V, VGE = 0V, f = 1MHz - 45 - nF - 15 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP400LSS12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 400A - 700 850 ns Fall time VGE = ±15V - 120 160 ns EOFF Turn-off energy loss VCE = 600V - 60 80 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 3.3Ω - 600 750 ns L ~ 100nH - 150 200 ns - 35 75 mJ - 30 40 µC Min. Typ. Max. Units IC = 400A - 900 1100 ns Fall time VGE = ±15V - 200 250 ns EOFF Turn-off energy loss VCE = 600V - 85 100 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 3.3Ω - 700 850 ns L ~ 100nH - 180 230 ns - 55 80 mJ - 55 70 µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 400A, VR = 50% VCES, dIF/dt = 2000A/µs Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 400A, VR = 50% VCES, dIF/dt = 2000A/µs-1 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V Vge = 20/15/12/10V 800 800 Common emitter Tcase = 25˚C 700 700 600 Collector current, IC - (A) Collector current, IC - (A) 600 500 400 300 500 400 300 200 200 100 100 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig. 3 Typical output characteristics 80 70 5.0 90 Conditions: Tcase = 125˚C, VCE = 600V, VGE = ±15V Conditions: Tcase = 125˚C, VCE = 600V, VGE = ±15V 80 A B A B C 70 Turn-off energy, Eoff - (mJ) Turn-on energy, Eon - (mJ) 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) Fig. 4 Typical output characteristics 60 C 50 40 30 20 60 50 40 30 20 A : Rg = 6.2Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 10 0 50 Common emitter Tcase = 125˚C 0 100 150 200 250 300 350 Collector current, IC - (A) 400 Fig. 5 Typical turn-on energy vs collector current 450 A : Rg = 6.2Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 10 0 50 100 150 200 250 300 Collector current, IC - (A) 400 Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 350 5/10 GP400LSS12 1000 Conditions: VCE = 600V, 35 VGE = 15V, Rg = 4.7Ω 900 800 td(off) 30 Switching times, ts - (ns) Diode turn-off energy, Eoff(Diode) - (mJ) 40 Tcase = 125˚C 25 20 Tcase = 25˚C 15 700 td(on) 600 Conditions: Tcase = 125˚C, VCE = 600V VGE = 15V Rg = 3.3Ω 500 400 300 10 200 5 tf 100 tr 0 0 0 100 200 300 Collector current, IC (A) 400 0 Fig. 7 Typical diode turn-off energy vs collector current 50 100 150 200 250 300 Collector currrent, IC - (A) 350 400 Fig.8 Typical switching characteristics 800 1000 700 900 800 Tj = 25˚C Collector current, IC - (A) Forward current, IF - (A) 600 Tj = 125˚C 500 400 300 700 600 500 400 300 200 200 100 100 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 Fig. 9 Diode typical forward characteristics 6/10 3.5 0 0 Tcase = 125˚C Vge = ±15V Rg = 4.7Ω* *Recommended minimum value 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) 1200 Fig. 10 Reverse bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS12 10000 IC max. (single pulse) 1000 IC tp = 50µs tp = 100µs ax m 100 C .D o (c in nt uo Collector current, IC - (A) Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 us tp = 1ms ) 10 Diode Transistor 10 1 0.1 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 1 Fig. 11 Forward bias safe operating area 100 Pulse width, tp - (ms) 10000 1000 Fig. 12 Transient thermal impedance 1000 700 PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 900 10 600 DC collector current, IC - (A) Inverter phase current, IC(PK) - (A) 800 700 600 500 400 300 500 400 300 200 200 Conditions: 100 Tj = 125°C, Tc = 75°C, Rg = 3.3Ω, VCC = 600V 0 1 10 fmax - (kHz) Fig. 13 3 Phase inverter operating frequency 100 50 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 160 Fig. 14 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 140 7/10 GP400LSS12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 46.5 46.5 3.5x6 4x Ø6.5 27 6x5.5 16 4 1 20 61.4 48 40 5 2 3 20 24 29 2x M6 23 36max 3x M4 5 106.4 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M4): 2Nm (17lbs.ins) Module outline type code: L 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400LSS12 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP400LSS12 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5306-2 Issue No. 2.2 October 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com