GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001 KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 3300V 3.4V 1200A 2400A APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives ■ Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP1200ESM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. External connection C1 C2 C3 E1 E2 E3 Aux C G Aux E External connection Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: GP1200ESM33 Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 GP1200ESM33 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V ±20 V Continuous collector current Tcase = 80˚C 1200 A IC(PK) Peak collector current 1ms, Tcase = 120˚C 2400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 14.7 kW Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6000 V Min. Max. Units - 8.5 ˚C/kW - 16.3 ˚C/kW - 4 ˚C/kW Transistor - 125 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm IC THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/9 Junction temperature Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1200ESM33 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 3 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 100 mA Gate leakage current VGE = ±20V, VCE = 0V - - 12 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 1200A - 3.4 4.3 V VGE = 15V, IC = 1200A, , Tcase = 125˚C - 4.3 5 V Parameter Symbol ICES IGES Collector cut-off current Test Conditions IF Diode forward current DC - - 1200 A IFM Diode maximum forward current tp = 1ms - - 2400 A VF Diode forward voltage IF = 1200A - 2.3 2.9 V IF = 1200A, Tcase = 125˚C - 2.4 3 V VCE = 25V, VGE = 0V, f = 1MHz - 300 - nF - 10 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 GP1200ESM33 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 1200A - 3.2 - µs Fall time VGE = ±15V - 0.9 - µs EOFF Turn-off energy loss VCE = 1800V - 1.6 - J td(on) Turn-on delay time RG(ON) = 1.8Ω, RG(OFF) = 3.3Ω - 1.1 - µs CGE = 660nF, - 0.4 - µs L ~ 90nH - 1.6 - J IF = 1200A, VR = 1800V, - 600 - µC dIF/dt = 5500A/µs - 1200 - A - 0.7 - J Min. Typ. Max. Units IC = 1200A - 3.4 - µs Fall time VGE = ±15V - 1.5 - µs EOFF Turn-off energy loss VCE = 1800V - 2.4 - J td(on) Turn-on delay time RG(ON) = 1.8Ω, RG(OFF) = 3.3Ω - 1.1 - µs CGE = 660nF, - 0.5 - µs L ~ 90nH - 2.3 - J IF = 1200A, VR = 1800V, - 1000 - µC dIF/dt = 4500A/µs - 1300 - A - 1.1 - J Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Test Conditions Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC 4/9 Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1200ESM33 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V 2400 Common emitter 2200 Tcase = 25˚C Common emitter 2200 Tcase = 125˚C 2000 2000 1800 1800 Collector current, Ic - (A) Collector current, Ic - (A) Vge = 20/15/12/10V 2400 1600 1400 1200 1000 800 1600 1400 1200 1000 800 600 600 400 400 200 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 0 0 6.0 Fig.3 Typical output characteristics 6.0 7.0 2800 2600 2200 2400 2000 Tj = 25˚C 2200 1800 2000 Collector current, IC - (A) Foward current, IF - (A) 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) Fig.4 Typical output characteristics 2400 Tj = 125˚C 1600 1400 1800 1600 1400 1200 1200 1000 1000 800 600 400 200 0 1.0 1.0 1.5 2.0 2.5 Foward voltage, VF - (V) 3.0 Fig.5 Diode typical forward characteristics 3.5 800 600 Tcase = 125˚C Vge = ±15V 400 Rg(OFF) = 3.3Ω CGE = 660nF 200 dVCE/dt < 9000V/µs 0 2500 0 500 1000 1500 2000 3000 Collector-emitter voltage, Vce - (V) Fig.6 Reverse bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3500 5/9 GP1200ESM33 100 IC max. (single pulse) tp = 100µs Collector current, IC - (A) 1000 IC tp m ax 100 = 1m s .D C (c on tin uo us ) 10 Transient thermal impedance, Zth (j-c) - (°C/kW ) 10000 Conditions: Tvj = 125˚C, Tcase = 80˚C 10 100 1000 Collector-emitter voltage, Vce - (V) Transistor 10 1 0.1 0.001 1 1 Diode 10000 Fig.7 Forward bias safe operating area 0.01 0.1 Pulse width, tp - (ms) 1 10 Fig.8 Transient thermal impedance 2400 400 2200 Tvj = 25˚C, VCE = 25V VGE = 0V, f = 1MHz 380 2000 360 Input capacitance, Cies - (nF) DC collector current, IC - (A) 1800 1600 1400 1200 1000 800 600 300 280 260 220 200 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 Fig.9 DC current rating vs case temperature 6/9 320 240 400 0 0 340 160 200 0 10 20 30 40 50 Collector-emitter voltage, VCE - (V) 60 Fig.10 Typical input capacitance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1200ESM33 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: E Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7/9 GP1200ESM33 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with Concept gate drivers AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP1200ESM33 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5308-2 Issue No. 2.1 February 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/9