GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES ■ Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001 KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 3300V 3.6V 800A 1600A APPLICATIONS ■ High Power Inverters ■ Motor Controllers ■ Induction Heating ■ Resonant Converters The Powerline range of high power modules includes dual, half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800NSS33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. External connection C1 C2 E1 E2 Aux C G Aux E External connection Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. C1 E1 ORDERING INFORMATION Order As: GP800NSS33 C1 E2 G Note: When ordering, please use the whole part number. E2 C2 E2 - Aux Emitter C1 - Aux Collector Outline type code: N (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 GP800NSS33 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 3300 V ±20 V Continuous collector current Tcase = 70˚C 800 A IC(PK) Peak collector current 1ms, Tcase = 110˚C 1600 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 8.3 kW Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 6 kV Min. Max. Units - 15 ˚C/kW - 30 ˚C/kW - 8 ˚C/kW Transistor - 125 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm IC THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/9 Junction temperature Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800NSS33 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 2 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 70 mA Gate leakage current VGE = ±20V, VCE = 0V - - 12 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4 - 7.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 800A - 3.6 4.3 V VGE = 15V, IC = 800A, , Tcase = 125˚C - 4.5 5 V Parameter Symbol ICES IGES Collector cut-off current Test Conditions IF Diode forward current DC - - 800 A IFM Diode maximum forward current tp = 1ms - - 1600 A VF Diode forward voltage IF = 800A - 2.3 2.9 V IF = 800A, Tcase = 125˚C - 2.4 3 V VCE = 25V, VGE = 0V, f = 1MHz - 200 - nF - 15 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 GP800NSS33 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 800A - 3.2 - µs Fall time VGE = ±15V - 0.7 - µs EOFF Turn-off energy loss VCE = 1800V - 1 - J td(on) Turn-on delay time RG(ON) = = 3.3Ω - 1.1 - µs Rise time RG(OFF) = 6.8Ω - 0.4 - µs CGE = 440nF, L ~ 100nH - 1.2 - J IF = 800A, VR = 1800V, - 750 - µC dIF/dt = 3600A/µs-1 - 400 - A - 0.45 - J Min. Typ. Max. Units IC = 800A - 3.4 - µs Fall time VGE = ±15V - 1.1 - µs EOFF Turn-off energy loss VCE = 1800V - 1.5 - J td(on) Turn-on delay time RG(ON) = = 3.3Ω - 1.1 - µs Rise time RG(OFF) = 6.8Ω - 0.5 - µs CGE = 440nF, L ~ 100nH - 1.5 - J IF = 800A, VR = 1800V, - 800 - µC dIF/dt = 3000A/µs-1 - 650 - A - 0.7 - J Parameter Symbol td(off) tf tr Turn-off delay time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Test Conditions Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC 4/9 Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800NSS33 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V Vge = 20/15/12/10V 1600 1600 1400 Common emitter Tcase = 25˚C 1400 1200 Collector current, Ic - (A) Collector current, Ic - (A) 1200 1000 800 600 1000 800 600 400 400 200 200 0 0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 0 0 6.0 Fig.3 Typical output characteristics 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 7.0 Fig.4 Typical output characteristics 1600 1800 1400 1600 Tj = 25˚C 1400 Collector current, IC - (A) 1200 Foward current, IF - (A) Common emitter Tcase = 125˚C Tj = 125˚C 1200 1000 1000 800 600 400 200 0 1.0 1.5 2.0 2.5 Foward voltage, VF - (V) 3.0 Fig.5 Diode typical forward characteristics 3.5 800 600 400 Tcase = 125˚C Vge = ±15V Rg(ON) = 3.3Ω 200 R g(OFF) = 6.8Ω CGE = 440nF 0 2500 0 500 1000 1500 2000 3000 Collector-emitter voltage, Vce - (V) Fig.6 Reverse bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3500 5/9 GP800NSS33 10000 IC max. (single pulse) IC Collector current, IC - (A) 1000 C .D ax m 100 us uo in nt o (c ) 10 tp = 50µs tp = 100µs tp = 1ms Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 Conditions: Tvj = 125˚C, Tcase = 70˚C 10 100 1000 Collector-emitter voltage, Vce - (V) Transistor 10 1 0.1 0.001 1 1 Diode 10000 Fig.7 Forward bias safe operating area 0.01 0.1 Pulse width, tp - (ms) 1 10 Fig.8 Transient thermal impedance 300 1400 Tvj = 25˚C, VCE = 25V VGE = 0V, f = 1MHz 290 1200 Input capacitance, Cies - (nF) 280 DC collector current, IC - (A) 1000 800 600 400 270 260 250 240 230 220 200 0 0 210 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 Fig. 9 DC current rating vs case temperature 6/9 160 200 0 10 20 30 40 50 Collector-emitter voltage, VCE - (V) 60 Fig.10 Typical input capacitance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800NSS33 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 20 20 C1 C1 65 57 18 10.65 10.35 E2 E2 E2 - Aux Emitter C1 - Aux Collector 43.5 57 65 G 24.5 48.8 E1 C2 20 40 45.2 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Nominal weight: 1600g Module outline type code: N Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7/9 GP800NSS33 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with Concept gate drivers AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. 8/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800NSS33 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5358-2 Issue No. 2.1 March 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/9