GP201MHS18 GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES ■ Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 200A Per Arm APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives ■ Resonant Converters KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A 6(G2) 11(C2) 7(E2) 3(C1) 2(E2) 1(E1C2) 5(E1) 9(C1) 4(G1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. Fig. 1 Half bridge circuit diagram The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 11 10 1 2 3 8 9 6 7 5 4 ORDERING INFORMATION Order As: GP201MHS18 Note: When ordering, please use the complete part number. Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP201MHS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1800 V ±20 V Collector current DC, Tcase = 80˚C for Tj = 125˚C 200 A IC(PK) Peak collector current 1ms, Tcase = 120˚C 400 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 1500 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V Min. Max. Units - 84 ˚C/kW - 160 ˚C/kW - 15 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C - 5 Nm IC THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor (per arm) Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/10 Junction temperature Storage temperature range Screw torque Mounting - M6 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 7 mA Gate leakage current VGE = ±20V, VCE = 0V - - ±1 µA VGE(TH) Gate threshold voltage IC = 10mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 200A - 2.6 3.2 V VGE = 15V, IC = 200A, Tcase = 125˚C - 3.3 4 V Parameter Symbol ICES IGES Collector cut-off current Test Conditions IF Diode forward current DC - - 200 A IFM Diode maximum forward current tp = 1ms - - 400 A VF Diode forward voltage IF = 200A - 2.2 2.5 V IF = 200A, Tcase = 125˚C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 25 - nF - 30 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP201MHS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 200A - 500 650 ns Fall time VGE = ±15V - 250 350 ns EOFF Turn-off energy loss VCE = 900V - 90 180 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 450 600 ns L ~ 100nH - 90 120 ns - 70 100 mJ - 50 80 µC Min. Typ. Max. Units IC = 200A - 600 800 ns Fall time VGE = ±15V - 350 450 ns EOFF Turn-off energy loss VCE = 900V - 130 200 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 540 700 ns L ~ 100nH - 100 130 ns - 120 150 mJ - 80 110 µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 200A, VR = 50% VCES, dIF/dt = 2500A/µs Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 200A, VR = 50% VCES, dIF/dt = 2000A/µs 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V Vge = 20/15/12/10V 400 400 Common emitter Tcase = 25˚C 350 350 300 Collector current, Ic - (A) Collector current, Ic - (A) 300 250 200 150 250 200 150 100 100 50 50 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig. 3 Typical output characteristics 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 160 Tcase = 125˚C VGE = ±15V VCE = 900V 140 Tcase = 125˚C VGE = ±15V VCE = 900V A A 140 B C 120 B 120 C 100 80 60 Turn-off energy, EOFF - (mJ) Turn-on energy, EON - (mJ) 1.0 Fig. 4 Typical output characteristics 180 160 Common emitter Tcase = 125˚C 100 80 60 40 40 A: Rg = 10Ω B: Rg = 6.2Ω C: Rg = 4.7Ω 20 0 0 20 40 60 80 100 120 140 160 180 200 Collector current, IC - (A) Fig. 5 Typical turn-on energy vs collector current A: Rg = 10Ω B: Rg = 6.2Ω C: Rg = 4.7Ω 20 0 0 20 40 60 80 100 120 140 Collector current, IC - (A) Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 160 180 200 5/10 GP201MHS18 50 45 td(off) 500 Tcase = 125˚C 40 Tcase = 125˚C VGE = ±15V VCE = 900V Rg = 4.7Ω td(on) 35 Switching times, ts - (ns) Diode turn-off energy, Eoff(diode) - (mJ) 600 VGE = ±15V VCE = 900V Tcase = 25˚C 30 25 20 15 400 300 tf 200 10 tr 100 5 0 0 25 50 75 100 125 150 175 0 0 200 20 40 Collector current, IT - (A) Fig. 7 Typical diode turn-off energy vs collector current 60 80 100 120 140 160 Collector current, IC - (A) 180 200 Fig. 7 Typical diode reverse recovery charge vs collector current 500 400 450 350 Tj = 25˚C 400 Collector current, IC - (A) Foward current, IF - (A) 300 250 Tj = 125˚C 200 150 350 300 250 200 150 100 100 50 50 Tcase = 125˚C Vge = ±15V Rg(min) = 4.7Ω Rg(min) : Minimum recommended value 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 Fig. 9 Diode typical forward characteristics 6/10 3.5 0 0 1200 400 800 1600 Collector-emitter voltage, Vce - (V) 2000 Fig. 10 Reverse bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 1000 Transient thermal impedance, Zth (j-c) - (°C/kW ) 1000 100 IC 50µs m .D ax 100µs C on (c 10 u tin Collector current, IC - (A) IC max. (single pulse) ou s) tp = 1ms 10 100 1000 Collector-emitter voltage, Vce - (V) 10 10000 Fig. 11 Forward bias safe operating area 350 DC collector current, IC - (A) Inverter phase current, IC(PK) - (A) 150 100 Conditions: Tj = 125˚C, Tcase = 75˚C Rg = 4.7Ω, VCC = 900V 250 200 150 100 50 0 10 fmax - (kHz) Fig. 13 3 Phase inverter operating frequency 20 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig. 14 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 10 1 300 200 1 0.1 Pulse width, tp - (s) 350 250 50 0.01 Fig. 12 Transient thermal impedance PWM Sine Wave Power Factor = 0.9, Modulation Index =1 300 Transistor 100 1 0.001 1 1 Diode 7/10 GP201MHS18 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 ± 0.5 28 ± 0.5 6 62 ± 0.8 48 ± 0.3 11 1 10 2 3 7 4x Fast on tabs 8 5 9 4 93 ± 0.3 3x M6 23 38max 8 106 ± 0.8 108 ± 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP201MHS18 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5290-3 Issue No. 3.1 January 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com