MP03XXX360 MP03XXX360 Dual Thyristor, Thyristor/Diode Module Replaces June 2001 version, DS4484-6.1 DS4484-7.0 July 2002 FEATURES KEY PARAMETERS ■ Dual Device Module VDRM 1200V ■ Electrically Isolated Package IT(AV) 352A ■ Pressure Contact Construction ITSM(per arm) 10600A ■ International Standard Footprint Visol 3000V ■ Alumina (Non Toxic) Isolation Medium Code Circuit APPLICATIONS HBT ■ Motor Control ■ Controlled Rectifier Bridges ■ Heater Control ■ AC Phase Control HBP HBN Fig.1 Circuit diagrams VOLTAGE RATINGS Type Number MP03XXX360-12 Repetitive Peak Voltages VDRM VRRM V 1200 Conditions Tvj = 0˚ to 130˚C, MP03XXX360-10 1000 IDRM = IRRM = 50mA MP03XXX360-08 800 VDRM = VRRM + 100V 1 2 3 K2 G2 G1 K1 VDSM = VRSM = respectively Lower voltage grades available. ORDERING INFORMATION Order As: MP03HBT360-12 or MP03HBT360-10 or MP03HBT360-08 MP03HBN360-12 or MP03HBN360-10 or MP03HBN360-08 MP03HBP360-12 or MP03HBP360-10 or MP03HBP360-08 Outline type code: MP03 Fig. 2 Electrical connections - (not to scale) Note: When ordering, please use the complete part number. 1/8 www.dynexsemi.com MP03XXX360 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) IT(RMS ITSM I2t ITSM I2t Visol Parameter Mean on-state current Test Conditions Max. Units Tcase = 75˚C 352 A Tcase = 85˚C 306 A 553 A 10ms half sine, Tj = 130˚C 10.6 kA VR = 0 560 x 103 A2s 10ms half sine, Tj = 130˚C 8.5 kA VR = 50% VDRM 360 x 103 A2s 3000 V Half wave resistive load Tcase = 75˚C RMS value Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Commoned terminals to base plate. AC RMS, 1 min, 50Hz Isolation voltage THERMAL AND MECHANICAL RATINGS Symbol Test Conditions Parameter Min. Max. Units Thermal resistance - junction to case dc - 0.105 ˚C/kW (per thyristor or diode) Half wave - 0.115 ˚C/kW 3 Phase - 0.12 ˚C/kW Thermal resistance - case to heatsink Mounting torque = 5Nm - 0.05 ˚C/kW (per thyristor or diode) with mounting compound Tvj Virtual junction temperature Reverse (blocking) - 135 ˚C Tstg Storage temperature range –40 135 ˚C Mounting - M5 - 5(44) Nm (lb.ins) Electrical connections - M8 - 9(80) Nm (lb.ins) - 950 g Rth(j-c) Rth(c-hs) - - Screw torque Weight (nominal) - - 2/8 www.dynexsemi.com MP03XXX360 DYNAMIC CHARACTERISTICS - THYRISTOR Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tj = 130˚C - 50 mA dV/dt Linear rate of rise of off-state voltage To 67% VDRM, Tj = 130˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 600A, gate source 10V, 5Ω - 500 A/µs IRRM/IDRM tr = 0.5µs, Tj = 130˚C VT(TO) rT Threshold voltage At Tvj = 135˚C. See note 1 - 0.75 V On-state slope resistance At Tvj = 135˚C. See note 1 - 0.7 mΩ Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 150 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig. 5 100 W PG(AV) Mean gate power 5 W - - 3/8 www.dynexsemi.com MP03XXX360 20 I2t = Î2 x t 2 Peak half sine wave on-state current - (kA) Measured under pulse conditions Tj = 125˚C 1200 800 400 15 500 450 400 10 350 I2t 300 5 250 I2t value - (A2s x 103) Instantaneous on-state current, IT - (A) 1600 200 0 0.6 0.8 1.2 1.0 1.4 1.6 Instantaneous on-state voltage, VT - (V) 0 1 1.8 ms Fig. 3 Maximum (limit) on-state characteristics 0.15 10 400 100 100 100 25 - W 1.0 0W 5W Tj = 125˚C W Tj = 25˚C d.c. 0.10 Tj = –40˚C 9% it 9 r lim e Upp W 100 100 100 100 100 50 - 75 50 100 100 100 100 100 10 50 µs 20 25 100 500 1ms 10ms 10 Gate trigger voltage, VGT - (V) Cycles at 50Hz Duration Frequency Hz 10 0.05 L ow 0.1 0.001 150 50 2 3 45 Fig. 4 Surge (non-repetitive) on-state current vs time (Thyristor or diode with 50% VRRM at Tcase = 130˚C) Table gives pulse power PGM in Watts Pulse Width 1 Thermal impedance, Rth(j-c) - (˚C/W) 100 10 er li mit 1% 0.01 0.1 0.1 Gate trigger current, IGT - (A) Fig. 5 Gate characteristics 10 0 0.001 0.01 0.1 1.0 10 100 Time - (s) Fig. 6 Transient thermal impedance - dc 4/8 www.dynexsemi.com MP03XXX360 500 450 180˚ 90˚ On-state power loss per device - (W) 30˚ 300 250 200 150 250 200 150 50 50 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 350 0 0 400 100 150 200 250 300 350 400 Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz 140 120 120 Maximum permissible case temperature - (˚C) 140 Maximum permissible case temperature - (˚C) 50 Mean on-state current, IT(AV) - (A) Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz 100 100 80 60 40 d.c. 80 60 40 20 20 30˚ 0 0 30˚ 300 100 50 d.c. 60˚ 350 100 0 0 90˚ 400 60˚ 350 120˚ 450 120˚ 400 On-state power loss per device - (W) 500 180˚ 50 60˚ 90˚ 120˚ 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 30˚ 180˚ 350 400 Fig. 9 Maximum permissible case temperature vs on-state current at specified conduction angles, sine wave 50/60Hz 0 0 50 60˚ 90˚ 120˚ 100 150 200 250 300 Mean on-state current, IT(AV) - (A) 180˚ 350 400 Fig. 10 Maximum permissible case temperature vs on-state current at specified conduction angles, square wave 50/60Hz 5/8 www.dynexsemi.com MP03XXX360 1400 0.04 1200 0.02 Rth(hs-a) ˚C/W R - Load Total power - (W) 1000 0.08 800 L - Load 0.10 0.12 600 0.15 0.20 400 0.30 0.40 200 0 0 20 40 60 80 100 120 0 Maximum ambient temperature - (˚C) 200 400 D.C. output current - (A) 600 Fig. 11 50/60Hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal) 1200 0.08 0.04 0.02 Rth(hs-a) ˚C/W R & L- Load 1000 Total power - (W) 800 0.10 0.12 600 0.15 400 0.20 0.30 200 0 0 0.40 20 40 60 80 100 Maximum ambient temperature - (˚C) 120 0 200 400 D.C. output current - (A) 600 Fig. 12 50/60Hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance (Note: Rth(hs-a) values given above are true heatsink thermal resistances to ambient and already account for Rth(c-hs) module contact thermal) 6/8 www.dynexsemi.com MP03XXX360 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 42.5 35 28.5 5 G1 K1 5 K2 G2 6.5 3 2 1 K2 G2 1 5 18 50 38 Ø5.5 2 3 Circuit type: HBN G1 K1 80 2.8x0.8 115 1 2 3 3x M8 Circuit type: HBP G1 K1 K2 G2 52 1 2 3 32 Circuit type: HBT 92 Recommended fixings for mounting: M5 socket head cap screws. Nominal weight: 950g Auxiliary gate/cathode leads are not supplied but may be purchsed separately. Module outline type code: MP03 MOUNTING RECOMMENDATIONS Adequate heatsinking is required to maintain the base temperature at 75˚C if full rated current is to be achieved. Power dissipation may be calculated by use of VT(TO) and rT information in accordance with standard formulae. We can provide assistance with calculations or choice of heatsink if required. The heatsink surface must be smooth and flat; a surface finish of N6 (32µin) and a flatness within 0.05mm (0.002") are recommended. Immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, Scotch Brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. Care should be taken to ensure no foreign particles remain. An even coating of thermal compound (eg. Unial) should be applied to both the heatsink and module mounting surfaces. This should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. After application of thermal compound, place the module squarely over the mounting holes, (or ‘T’ slots) in the heatsink. Fit and finger tighten the recommended fixing bolts at each end. Using a torque wrench, continue to tighten the fixing bolts by rotating each bolt in turn no more than 1/4 of a revolution at a time, until the required torque of 6Nm (55lbs.ins) is reached on all bolts at both ends. It is not acceptable to fully tighten one fixing bolt before starting to tighten the others. Such action may DAMAGE the module. 7/8 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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