RD33FG RD33FG Rectifier Diode Target Information Replaces November 2000, version DS5415-1.1 DS5415-2.0 October 2001 FEATURES KEY PARAMETERS ■ Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF(AV) (max) 3997A ■ Very Low On-state Voltage IFSM (max) 46750A 600V APPLICATIONS ■ Electroplating ■ Power Supplies ■ Welding VOLTAGE RATINGS Part and Ordering Repetitive Peak Number Reverse Voltage VRRM V RD33FG06 RD33FG05 RD33FG04 RD33FG03 RD33FG02 RD33FG01 600 500 400 300 200 100 Conditions VRSM = VRRM Outline type code: G (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: RD33FG03 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com RD33FG CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 3997 A Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 6278 A Continuous (direct) forward current - 6358 A 2831 A IF Half wave resistive load Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 4447 A Continuous (direct) forward current - 4401 A IF Half wave resistive load Tcase = 85˚C unless otherwise stated Parameter Symbol Test Conditions Max. Units 3830 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 6010 A Continuous (direct) forward current - 6080 A 2710 A IF Single Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 4260 A Continuous (direct) forward current - 4210 A IF 2/7 www.dynexsemi.com RD33FG SURGE RATINGS IFSM I2t IFSM I2t Test Conditions Parameter Symbol Surge (non-repetitive) forward current I2t for fusing Max. Units 37.4 kA 7.0 x 106 A2s 46.75 kA 10.93 x 106 A2s 10ms half sine, Tcase = 175˚C VR = 50% VRRM - 1/4 sine Surge (non-repetitive) forward current 10ms half sine, Tcase = 175˚C I2t for fusing VR = 0 THERMAL AND MECHANICAL RATINGS Parameter Symbol Rth(j-c) Rth(c-h) Tvj Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Test Conditions Min. Max. Units Double side cooled DC - 0.032 ˚CW Single side cooled Anode DC - 0.064 ˚CW Cathode DC - 0.064 ˚CW Double side - 0.008 ˚CW (with mounting compound) Single side - 0.016 ˚CW Forward (conducting) - 225 ˚C Reverse (blocking) - 200 ˚C Clamping force 12.0kN Tstg Storage temperature range –55 200 ˚C Fm Clamping force 10.8 13.2 kN Min. Max. Units CHARACTERISTICS Symbol Parameter Test Conditions IRM Peak reverse current At VRRM, Tcase = 200˚C - 50 mA Irr Peak reverse recovery current IF = 1000A, dIRR/dt = 3A/µs, - 30 A QS Total stored charge Tcase = 200˚C, VR = 100V - 160 µC VTO Threshold voltage At Tvj = 200˚C - 0.6 V rT Slope resistance At Tvj = 200˚C - 0.0872 mΩ 3/7 www.dynexsemi.com RD33FG CURVES 4000 3000 Tj = 200˚C dc 1/2 wave 3 phase 6 phase Mean power dissipation - (W) Instantaneous forward current, IF - (A) 2500 2000 1500 1000 3000 2000 1000 500 0 0.5 0 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0 500 Instantaneous forward voltage, VF - (V) Fig. 2 Maximum (limit) forward characteristics 1000 1500 2000 2500 3000 Mean forward current, IF(AV) - (A) 3500 4000 Fig. 3 Power dissipation 1000 1000 IF Stored charge QS - (µC) Max. QS dI/dt IRM 100 100 Max. IRR Conditions: Tj = 200˚C VR = 100V IF = 2000A 10 0.1 1.0 10 Reverse recovery current IRR - (A) QS 10 100 Rate of decay of forward current, dIF/dt - (A/µs) Fig. 4 Maximum stored charge and reverse recovery current vs dI/dt 4/7 www.dynexsemi.com RD33FG 80 0.1 8 I2t = Î2 x t 7 60 6 50 5 40 4 I2t 30 3 20 2 10 1 10 ms 1 2 3 5 10 20 I2t value - (A2s x 106) Peak half sine forward current - (kA) 70 Anode side cooled 1 50 Thermal Impedance - Junction to case (˚C/W) 2 Double side cooled 0.01 0.001 0.001 Conduction Effective thermal resistance Junction to case ˚C/W Double side Anode side 0.032 0.064 d.c. 0.034 0.066 Halfwave 0.044 0.076 3 phase 120˚ 0.057 0.089 6 phase 60˚ 0.01 0.1 Time - (s) 1.0 10 Cycles at 50Hz Duration Fig. 5 Surge (non-repetitive) forward current vs time (with 50% VRRM @ Tcase = 175˚C) Fig. 6 Maximum (limit) transient thermal impedance 5/7 www.dynexsemi.com RD33FG PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (in both electrodes) Cathode Ø58.5 max 27.0 25.4 Ø34 nom Ø34 nom Anode Nominal weight: 250g Clamping force: 12kN ±10% Package outine type code: G Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com RD33FG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5415-2 Issue No. 2.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 7/7 www.dynexsemi.com