RD65FV RD65FV Rectifier Diode Target Information Replaces November 2000, version DS5408-1.1 DS5408-2.0 October 2001 FEATURES KEY PARAMETERS ■ Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF(AV) (max) 11745A ■ Very Low On-state Voltage IFSM (max) 162000A 600V APPLICATIONS ■ Electroplating ■ Power Supplies ■ Welding VOLTAGE RATINGS Part and Ordering Repetitive Peak Number Reverse Voltage VRRM V RD65FV06 RD65FV05 RD65FV04 RD65FV03 RD65FV02 RD65FV01 600 500 400 300 200 100 Conditions VRSM = VRRM Outline type code: V (See Package Details for further information) Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: RD65FV04 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com RD65FV CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 11745 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 18450 A Continuous (direct) forward current - 16974 A 7632 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 11988 A Continuous (direct) forward current - 10079 A IF Half wave resistive load Tcase = 85oC unless otherwise stated Symbol Parameter Test Conditions Max. Units 11120 A Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 17500 A Continuous (direct) forward current - 16000 A 7200 A IF Half wave resistive load Single Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 11300 A Continuous (direct) forward current - 9450 A IF Half wave resistive load 2/7 www.dynexsemi.com RD65FV SURGE RATINGS Symbol IFSM I2t IFSM I2t Surge (non-repetitive) forward current I2t for fusing Units 130 kA 84.5 x 106 A2s 162 kA 132 x 106 A2s 10ms half sine, Tcase = 175˚C VR = 50% VRRM - 1/4 sine Surge (non-repetitive) forward current Max. Test Conditions Parameter 10ms half sine, Tcase = 175˚C I2t for fusing VR = 0 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Virtual junction temperature Test Conditions Min. Max. Units Double side cooled DC - 0.0075 ˚CW Single side cooled Anode DC - 0.015 ˚CW Cathode DC - 0.015 ˚CW Double side - 0.002 ˚CW (with mounting compound) Single side - 0.004 ˚CW Forward (conducting) - 225 ˚C Reverse (blocking) - 200 ˚C Clamping force 43.0kN Tstg Storage temperature range –55 200 ˚C Fm Clamping force 38.7 47.3 kN Min. Max. Units CHARACTERISTICS Symbol Parameter Test Conditions IRM Peak reverse current At VRRM, Tcase = 200˚C - 150 mA Irr Peak reverse recovery current IF = 2000A, dIRR/dt = 3A/µs, - 230 A QS Total stored charge Tcase = 200˚C, VR = 100V - 39 µC VTO Threshold voltage At Tvj = 200˚C - 0.6 V rT Slope resistance At Tvj = 200˚C - 0.0225 mΩ 3/7 www.dynexsemi.com RD65FV CURVES 16000 8000 dc 1/2 wave 3 phase 6 phase 7000 14000 6000 12000 Mean power dissipation - (W) Instantaneous forward current, IF - (A) Tj = 200˚C 10000 5000 4000 3000 2000 1000 0 0.5 8000 6000 4000 2000 0 0.55 0.6 0.65 0.7 0.75 Instantaneous forward voltage, VF - (V) 0.8 0 2000 4000 6000 Fig. 2 Maximum (limit) forward characteristics 12000 14000 1000 IF dI/dt IRM Max. IRR 1000 100 Max. QS 1.0 10 Reverse recovery current IRR - (A) Conditions: Tj = 200˚C VR = 100V IF = 2000A QS 100 0.1 10000 Fig. 3 Power dissipation 10000 Stored charge QS - (µC) 8000 Mean forward current, IF(AV) - (A) 10 100 Rate of decay of forward current dI/dt - (A/µs) Fig. 4 Maximum stored charge and reverse recovery current vs dI/dt 4/7 www.dynexsemi.com RD65FV 0.1 280 I2t = Î2 x t 100 80 200 160 60 120 40 80 20 40 1 10 ms 1 2 3 5 10 20 50 Thermal impedance - ˚C/W Anode side cooled I2t value - (A2s x 106) Peak half sine forward current - (kA) 2 240 0.01 Double side cooled 0.001 0.0001 0.001 Conduction Effective thermal resistance Junction to case ˚C/W Double side Anode side 0.0075 0.015 d.c. 0.0085 0.016 Halfwave 0.0092 0.0167 3 phase 120˚ 0.0120 0.0194 6 phase 60˚ 0.01 0.1 1.0 Time - (s) 10 100 Cycles at 50Hz Duration Fig. 5 Surge (non-repetitive) forward current vs time (with 50% VRRM @ Tcase = 175˚C) Fig. 6 Maximum (limit) transient thermal impedance 5/7 www.dynexsemi.com RD65FV PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Holes Ø3.6 x 2.0 deep (In both electrodes) Cathode 27.0 25.4 Ø112.5 max Ø73 nom Ø73 nom Anode Nominal weight: 1100g Clamping force: 43kN ±10% Package outine type code: V Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com RD65FV POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5408-2 Issue No. 2.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 7/7 www.dynexsemi.com