DGT304SE13 DGT304SE Gate Turn-off Thyristor Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002 APPLICATIONS KEY PARAMETERS 700A ITCM VDRM 1300V IT(AV) 250A dVD/dt 500V/µs diT/dt 500A/µs ■ Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies ■ High Voltage Converters ■ Choppers ■ Welding ■ Induction Heating ■ DC/DC Converters FEATURES ■ Double Side Cooling ■ High Reliability In Service ■ High Voltage Capability ■ Fault Protection Without Fuses ■ High Surge Current Capability ■ Turn-off Capability Allows Reduction In Equipment Size And Weight. Low Noise Emission Reduces Acoustic Cladding Necessary For Environmental Requirements Outline type code: E. See Package Details for further information. VOLTAGE RATINGS Type Number DGT304SE13 Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage VDRM VRRM V V 1300 16 Conditions Tvj = 125oC, IDM = 50mA, IRRM = 50mA, VRG = 2V CURRENT RATINGS Symbol Parameter Conditions Max. Units 700 A ITCM Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF IT(AV) Mean on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 250 A IT(RMS) RMS on-state current THS = 80oC. Double side cooled. Half sine 50Hz. 390 A 1/13 DGT304SE13 SURGE RATINGS Symbol ITSM I2t diT/dt dVD/dt Conditions Parameter Max. Units Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC 4.0 kA I2t for fusing 10ms half sine. Tj =125oC 80000 A2s Critical rate of rise of on-state current VD = 60% VDRM, IT = 700A, Tj = 125oC, IFG > 20A, Rise time < 1.0µs 500 A/µs Rate of rise of off-state voltage To 80% VDRM; RGK ≤ 1.5Ω, Tj = 125oC 500 V/µs GATE RATINGS Symbol Parameter Conditions This value maybe exceeded during turn-off Min. Max. Units - 16 V VRGM Peak reverse gate voltage IFGM Peak forward gate current - 50 A Average forward gate power - 10 W Peak reverse gate power - 6 kW PFG(AV) PRGM diGQ/dt Rate of rise of reverse gate current 10 50 A/µs tON(min) Minimum permissable on time 20 - µs tOFF(min) Minimum permissable off time 40 - µs Min. Max. Units Double side cooled - 0.075 o Anode side cooled - 0.12 o Cathode side cooled - 0.20 o - 0.018 o - 125 o Operating junction/storage temperature range -40 125 o Clamping force 5.0 6.0 kN THERMAL RATINGS Symbol Rth(j-hs) Parameter DC thermal resistance - junction to heatsink surface Rth(c-hs) Contact thermal resistance Tvj Virtual junction temperature TOP/Tstg - 2/13 Conditions Clamping force 5.5kN With mounting compound per contact C/W C/W C/W C/W C C DGT304SE13 CHARACTERISTICS Tj = 125oC unless stated otherwise Symbol Conditions Parameter Min. Max. Units VTM On-state voltage At 600A peak, IG(ON) = 2A d.c. - 2.2 V IDM Peak off-state current At = VDRM, VRG = 2V - 25 mA IRRM Peak reverse current At VRRM - 50 mA VGT Gate trigger voltage VD = 24V, IT = 100A, Tj = 25oC - 0.9 V IGT Gate trigger current VD = 24V, IT = 100A, Tj = 25oC - 1.0 A IRGM Reverse gate cathode current VRGM = 16V, No gate/cathode resistor - 50 mA EON Turn-on energy VD = 900V, IT = 600A, dIT/dt = 300A/µs - 130 mJ td Delay time IFG = 20A, rise time < 1.0µs - 1.5 µs tr Rise time RL = (Residual inductance 3µH) - 3.0 µs - 350 mJ EOFF Turn-off energy tgs Storage time IT =600A, VDM = 750V - 10 µs tgf Fall time Snubber Cap Cs = 1.5µF, - 11 µs tgq Gate controlled turn-off time diGQ/dt = 15A/µs - 0.9 µs QGQ Turn-off gate charge RL = (Residual inductance 3µH) - 700 µC QGQT Total turn-off gate charge - 1400 µC 3/13 DGT304SE13 CURVES Fig.1 Gate characteristics Fig.2 Maximum (limit) on-state characteristics Fig.3 Dependence of ITCM on CS Fig.4 Maximum (limit) transient thermal resistance Fig.5 Surge (non-repetitive) on-state current vs time 4/13 DGT304SE13 Fig.6 Steady state rectangulerwave conduction loss - double side cooled Fig.7 Steady state sinusoidal wave conduction loss - double side cooled 5/13 DGT304SE13 6/13 Fig.8 Turn-on energy vs on-state current Fig.9 Turn-on energy vs peak forward gate current Fig.10 Turn-on energy vs on-state current Fig.11 Turn-on energy vs peak forward gate current DGT304SE13 Fig.12 Turn-on energy vs rate of rise of on-state current Fig.13 Delay time and rise time vs on-state current Fig.14 Delay time and rise time vs peak forward gate current Fig.15 Turn-off energy vs on-state current 7/13 DGT304SE13 Fig.16 Turn-off energy vs rate of rise of reverse gate current Fig.17 Turn-off energy vs on-state current Fig.18 Turn-off energy vs rate of rise of reverse gate current Fig.19 Turn-off energy vs on-state current with CS as parameter 8/13 DGT304SE13 Fig.20 Storage time vs on-state current Fig.21 Storage time vs rate of rise of reverse gate current Fig.22 Fall time vs on-state current Fig.23 Fall time vs rate of rise of reverse gate current 9/13 DGT304SE13 Fig.24 Peak reverse gate current vs on-state current Fig.25 Peak reverse gate current vs rate of rise of reverse gate current Fig.26 Turn-off gate charge vs on-state current Fig.27 Turn-off gate charge vs rate of rise of reverse gate current 10/13 DGT304SE13 Anode voltage and current Fig.28 Dependence of critical dVD/dt on gate-cathode resistance and gate-cathode reverse voltage 0.9VD 0.9IT dVD/dt VD IT 0.1VD td ITAIL VDP tgs tr Recommended gate conditions:ITCM = 700A IFG = 20A dIFG/dt = 20A/µs IG(ON) = 2A d.c. t = 4.5µs w1(min) VD VDM IGQM = 120A dIGQ/dt = 15A/µs QGQ = 700µc VRG(min) = 2V VRG(max) = 16V These are recommended Dynex Semiconductor conditions. Other conditions are permitted according to users gate drive specifications. tgf tgt Gate voltage and current dIFG/dt 0.1IFG tgq IFG VFG IG(ON) 0.1IGQ tw1 VRG QGQ 0.5IGQM IGQM V(RG)BR Fig.29 General switching waveforms 11/13 DGT304SE13 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 30˚ 15˚ 2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode) Cathode tab Cathode Ø42max Ø25nom. Gate 15 14 Ø25nom. Anode Nominal weight: 82g Clamping force: 6kN ±10% Package outine type code: E ASSOCIATED PUBLICATIONS Title Application Note Number Calculating the junction temperature or power semiconductors AN4506 GTO gate drive units AN4571 Recommendations for clamping power semiconductors AN4839 Use of V , r on-state characteristic AN5001 Impoved gate drive for GTO series connections AN5177 TO 12/13 T DGT304SE13 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 CUSTOMER SERVICES Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS4609-4 Issue No. 2.0 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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