FP100 PRELIMINARY DATA SHEET HIGH PERFORMANCE PHEMT • FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz • DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) DESCRIPTION AND APPLICATIONS The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation. Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz range. The device is well-suited for telecommunication applications. • ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C Parameter Symbol Test Conditions Min Typ Output Power @ 1 d B Compression P1dB f = 12 GHz; VDS = 5V; IDS = 50% IDSS 13 14 dBm Power Gain @ 1 d B Compression G1dB f = 12 GHz; VDS = 5V; IDS = 50% IDSS 8 9 dB Maximum Available Gain MAG f = 12 GHz; VDS = 5V; IDS = 50% IDSS 14.5 15.5 dB Noise Figure NF f = 12 GHz; VDS = 5V; IDS = 50% IDSS 3.0 dB Power-Added Efficiency η f = 12 GHz; VDS = 5V; IDS = 50% IDSS; POUT = 15.5 dBm 20 25 % Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 15 Transconductance GM 15 Pinch-Off Voltage VP VDS = 2 V; VGS = 0 V VDS = 2 V; IDS = 1 mA -0.50 Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGS = 1 mA 8 10.5 V Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 1 mA 7 10 V Gate-Source Leakage Current Magnitude |IGSL | VGS = -5 V Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Max Units 30 20 mS -2.5 4 mA 10 V µA Email: [email protected] Revised: 07/18/01 FP100 PRELIMINARY DATA SHEET HIGH PERFORMANCE PHEMT • RECOMMENDED CONTINUOUS OPERATING LIMITS Parameter Symbol Nominal Units Drain-Source Voltage VDS 5 V Gate-Source Voltage VGS -0.8 V Drain-Source Current IDS 0.5 IDSS mA RF Input Power PIN 30 mW Channel Operating Temperature TCH 150 °C Ambient Temperature TSTG -20/50 °C Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance. • ABSOLUTE RATINGS Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Min Max Units TAmbient = 22 ± 3 °C 7 V VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 2.5 mA RF Input Power PIN TAmbient = 22 ± 3 °C 60 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — 175 ºC -65 Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Email: [email protected] Revised: 07/18/01