FILTRONIC FP100

FP100
PRELIMINARY DATA SHEET
HIGH PERFORMANCE PHEMT
•
FEATURES
♦ 14 dBm P-1dB at 12 GHz
♦ 9 dB Power Gain at 12 GHz
♦ 3.0 dB Noise Figure at 12 GHz
•
DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm)
DIE THICKNESS: 3.9 mils (100 µm typ.)
BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.)
DESCRIPTION AND APPLICATIONS
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.
Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz
range. The device is well-suited for telecommunication applications.
•
ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C
Parameter
Symbol
Test Conditions
Min
Typ
Output Power @
1 d B Compression
P1dB
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
13
14
dBm
Power Gain @
1 d B Compression
G1dB
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
8
9
dB
Maximum Available Gain
MAG
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
14.5
15.5
dB
Noise Figure
NF
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
3.0
dB
Power-Added Efficiency
η
f = 12 GHz; VDS = 5V; IDS = 50% IDSS;
POUT = 15.5 dBm
20
25
%
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
15
Transconductance
GM
15
Pinch-Off Voltage
VP
VDS = 2 V; VGS = 0 V
VDS = 2 V; IDS = 1 mA
-0.50
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD|
IGS = 1 mA
8
10.5
V
Gate-Source Breakdown
Voltage Magnitude
|VBDGS|
IGS = 1 mA
7
10
V
Gate-Source Leakage
Current Magnitude
|IGSL |
VGS = -5 V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Max
Units
30
20
mS
-2.5
4
mA
10
V
µA
Email: [email protected]
Revised: 07/18/01
FP100
PRELIMINARY DATA SHEET
HIGH PERFORMANCE PHEMT
•
RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter
Symbol
Nominal
Units
Drain-Source Voltage
VDS
5
V
Gate-Source Voltage
VGS
-0.8
V
Drain-Source Current
IDS
0.5 IDSS
mA
RF Input Power
PIN
30
mW
Channel Operating Temperature
TCH
150
°C
Ambient Temperature
TSTG
-20/50
°C
Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
•
ABSOLUTE RATINGS
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
Min
Max
Units
TAmbient = 22 ± 3 °C
7
V
VGS
TAmbient = 22 ± 3 °C
-3
V
Drain-Source Current
IDS
TAmbient = 22 ± 3 °C
IDSS
mA
Gate Current
IG
TAmbient = 22 ± 3 °C
2.5
mA
RF Input Power
PIN
TAmbient = 22 ± 3 °C
60
mW
Channel Operating Temperature
TCH
TAmbient = 22 ± 3 °C
175
ºC
Storage Temperature
TSTG
—
175
ºC
-65
Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage
to the device.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Email: [email protected]
Revised: 07/18/01