LPS200P70 PACKAGED LOW NOISE PHEMT • FEATURES ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.6 dB Noise Figure at 2 GHz ♦ 14 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption • DESCRIPTION AND APPLICATIONS The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPS200’s active areas are passivated with Si3 N4 , and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include low noise receiver preamplifiers for commercial applications including Cellular/PCS systems and broad band commercial instrumentation. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C* Parameter Symbol Test Conditions Min Saturated Drain-Source Current** IDSS VDS = 2 V; VGS = 0 V 15 Noise Figure NF VDS = 2 V; IDS = 25% IDSS Associated Gain at minimum NF GA VDS = 2 V; IDS = 25% IDSS 10.5 12 dB Transconductance GM VDS = 2 V; VGS = 0 V 60 80 mS Gate-Source Leakage Current IGSO VGS = -3 V Pinch-Off Voltage VP VDS = 2 V; IDS = 1 mA *frequency=12 GHz, unless otherwise noted **Formerly binned as: LPS200P70-1 = 15-30 mA and LPS200P70–2 = 31-50 mA Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Typ 0.7 -0.25 Max Units 50 mA 1.3 dB 1 15 µA -0.8 -1.5 V Revised: 1/20/01 Email: [email protected] LPS200P70 PACKAGED LOW NOISE PHEMT • ABSOLUTE MAXIMUM RATINGS Notes: • • • • Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Min Max Units TAmbient = 22 ± 3 °C 4 V VGS TAmbient = 22 ± 3 °C -2 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 2 mA RF Input Power PIN TAmbient = 22 ± 3 °C 50 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — 175 ºC Total Power Dissipation PTOT TAmbient = 22 ± 3 °C 300 mW -65 Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power Absolute Maximum Power Dissipation to be de-rated as follows above 25°C: PTOT= 300mW – (3.5mW/°C) x THS where THS = heatsink or ambient temperature. This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: [email protected] LPS200P70 PACKAGED LOW NOISE PHEMT • PACKAGE OUTLINE (dimensions in mils) All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/20/01 Email: [email protected]