PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT • • FEATURES ♦ 0.6 dB Noise Figure at 2 GHz ♦ 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz ♦ 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz ♦ 50% Power-Added-Efficiency at 2 GHz DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. The LPD200’s active areas are passivated with Si3N4, and the SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that require a surface-mount package. The LPD200SOT343 is designed for commercial systems for use in low noise amplifiers and oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it appropriate for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and ISM band spread spectrum applications. • ELECTRICAL SPECIFICATIONS @ TAmbient = 25°°C Parameter Symbol Test Conditions Min Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 45 Power at 1-dB Compression P-1dB f=2GHz; VDS = 3 V; IDS = 50% IDSS 14 15.5 dBm Power Gain at 1-dB Compression G-1dB f=2GHz; VDS = 3 V; IDS = 50% IDSS 20 21 dB Power-Added Efficiency PAE f=2GHz; VDS = 3 V; IDS = 50% IDSS; POUT = 19.5 dBm 50 % Noise Figure NF f=2GHz; VDS = 3V; IDS = 25% IDSS 0.6 dB f=2GHz; VDS = 5V; IDS = 50% IDSS 0.8 dB 70 mS Max Units 75 mA Transconductance GM VDS = 2 V; VGS = 0 V Gate-Source Leakage Current IGSO VGS = -5 V Pinch-Off Voltage VP VDS = 2 V; IDS = 1 mA -0.25 Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 1 mA 6 7 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGD = 1 mA 8 9 V Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com 50 Typ 1 10 µA -1.5 V Revised: 2/09/01 Email: [email protected] PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT • ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Min Max Units TAmbient = 22 ± 3 °C 7 V VGS TAmbient = 22 ± 3 °C -3 V Drain-Source Current IDS TAmbient = 22 ± 3 °C IDSS mA Gate Current IG TAmbient = 22 ± 3 °C 5 mA RF Input Power PIN TAmbient = 22 ± 3 °C 60 mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — 175 ºC -65 Notes: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site. • PACKAGE OUTLINE (dimensions in mm) SOURCE GATE DRAIN SOURCE All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 2/09/01 Email: [email protected]