2SJ475-01 P-channel MOS-FET FAP-III Series -60V > Features - 0,06Ω 25A 50W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating -60 25 100 ±20 325,9 50 150 -55 ~ +150 Unit V A A V mJ W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=-1mA VGS=0V ID=-1mA VDS=VGS VDS=-60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=-12,5A VGS=-4V ID=-12,5A VGS=-10V ID=-12,5A VDS=-25V VDS=-25V VGS=0V f=1MHz VCC=-30V ID=-25A VGS=-10V RGS=10 Ω Tch=25°C L=100µH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. -60 -1,0 Test conditions channel to air channel to case Min. 7,5 Typ. -1,5 -10 -0,2 10 0,08 0,045 15 2000 700 450 15 80 190 90 Max. -2,5 -500 -1,0 100 0,11 0,06 3000 1050 680 25 120 290 140 -25 -2,0 160 0,9 Typ. Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com -3,0 Max. 75 2,50 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SJ475-01 P-channel MOS-FET -60V 0,06Ω 25A FAP-III Series 50W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [Ω] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=-25V; Tch=25°C VGS(th)=f(Tch); ID=-1mA; VDS=VGS 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ gfs [S] ↑ 4 Tch [°C] Typical Gate Charge Characteristic IAV=f(starting Tch) ↑ VDS [V] ↑ 7 VDS [V] 8 → Qg [nC] Maximum Avalanche Energy vs. starting Tch ↑ ↑ → 9 starting Tch [°C] ↑ Zth(ch-c) [K/W] ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 ID [A] EAV [mJ] Starting Tch [°C] → → Safe Operation Area EAV=f(starting Tch); VCC=-24V; IAV>=-25A 10 → Maximum Avalanche Current vs. starting Tch VGS=f(Qg); ID=-25A; Tc=25°C IAV [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source On-State-Resistance vs. ID ↑ RDS(ON) [Ω] ID=f(VGS); 80µs pulse test; VDS=-25V; Tch=25°C ↑ ID [A] ↑ C [F] Typical Transfer Characteristics RDS(on) = f(Tch); ID=-12,5A; VGS=10V VDS [V] → This specification is subject to change without notice! t [s] →