ETC 2SK1945-01S

2SK1945-01L,S
N-channel MOS-FET
FAP-IIA Series
900V
> Features
-
2,8Ω
5A
80W
> Outline Drawing
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Avalanche Proof
> Applications
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (RGS=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
V DGR
ID
I D(puls)
V GS
PD
T ch
T stg
Rating
900
900
5
20
±30
80
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Symbol
V (BR)DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
I
R
g
C
C
C
t
t
t
t
I
I
I
V
t
Q
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=900V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±30V
VDS=0V
ID=2,5A
VGS=10V
ID=2,5A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=600V
ID=5A
VGS=10V
RGS=10 Ω
Tch=25°C
L = 100µH
Min.
900
2,5
3
Typ.
3,0
10
0,2
10
2,0
6
1200
120
40
25
25
85
45
DRM
rr
rr
Symbol
R th(ch-a)
R th(ch-c)
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Test conditions
channel to air
channel to case
3,5
500
1,0
100
2,8
1800
180
60
40
40
130
70
5
DR
SD
Max.
0,93
400
1,5
Min.
Typ.
5
20
1,4
Max.
125
1,56
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
Unit
°C/W
°C/W
2SK1945-01L,S
N-channel MOS-FET
900V
2,8Ω
5A
FAP-IIA Series
80W
> Characteristics
Typical Output Characteristics
↑
Drain-Source-On-State Resistance vs. Tch
↑
→
Tch [°C]
Typical Drain-Source-On-State-Resistance vs. ID
Gate Threshold Voltage vs. Tch
↑
ID [A]
→
Tch [°C]
VDS [V]
C [nF]
8
VDS [V]
→
Qg [nC]
Allowable Power Dissipation vs. TC
↑
↑
IF [A]
↑
→
Forward Characteristics of Reverse Diode
VGS [V]
Typical Input Charge
7
6
VGS(th) [V]
5
→
Typical Capacitance vs. VDS
→
VGS [V]
gfs [S]
RDS(ON) [Ω]
ID [A]
↑
→
Typical Forward Transconductance vs. ID
↑
4
3
ID [A]
ID [A]
VDS [V]
↑
↑
2
RDS(ON) [Ω]
1
Typical Transfer Characteristics
9
→
VSD [V]
→
Safe operation area
Zth(ch-c) [K/W]
↑
↑
12
11
ID [A]
10
PD [W]
↑
Transient Thermal impedance
Tc [°C]
→
VDS [V]
→
This specification is subject to change without notice!
t [s]
→