FUJI 2SJ314-01L

2SJ314-01L,S
FUJI POWER MOSFET
P-CHANNEL SILICON POWER MOSFET
FAP-III SERIES
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High forward Transconductance
Avalanche-proof
K-Pack(L)
K-Pack(S)
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
L-type
EIAJ
Maximum ratings and characteristics
Equivalent circuit schematic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Drain-gate voltage (RGS=20kΩ)
Continuous drain current
Pulsed drain current
Gate-source voltage
Max. power dissipation
Operating and storage
temperature range
Symbol
V DS
V DGR
ID
ID(puls]
VGS
PD
Tch
Tstg
Rating
-60
-60
-5
-20
±20
20
+150
-55 to +150
Unit
V
A
A
A
V
W
°C
°C
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Symbol
V(BR)DSS
VGS(th)
IDSS
Gate-source leakage current
Drain-source on-state resistance
IGSS
RDS(on)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
(ton=td(on)+tr)
Turn-off time toff
(toff=td(off)+tf)
Avalanche capability
Continuous reverse drain current
Pulsed reverse drain current
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
IDR
IDRM
V SD
t rr
Qrr
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS= -60V
VGS=0V
VGS=±20V VDS=0V
ID= -2.5A
Min.
-60
-1.0
Tch=25°C
Tch=125°C
VGS= -4V
VGS= -10V
ID=2.5A VDS= -25V
VDS= -25V
VGS=0V
f=1MHz
VCC= -30V RG=25 Ω
ID= -3A
VGS= -10V
L=100μH
Tc=25°C
Tc=25°C
Tch=25°C
2.0
Typ.
-1.5
-10
-0.2
10
280
200
4.5
500
200
120
15
20
100
80
Max.
-2.5
-500
-1.0
100
480
300
750
300
180
23
30
150
120
-5
-5
-20
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/μs Tch=25°C
-4.0
80
0.18
Units
V
V
μA
mA
nA
mΩ
mΩ
S
pF
ns
A
A
A
V
ns
μC
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Min.
Typ.
Max.
Units
6.25
125.0
°C/W
°C/W
1
FUJI POWER MOSFET
2SJ314-01L,S
Characteristics
2
FUJI POWER MOSFET
2SJ314-01L,S
3