2SK1083-MR N-channel MOS-FET F-III Series 60V > Features - 0,22Ω 8A 20W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Symbol V DS Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range I I I V P T T D D(puls) DR GS D ch stg Rating Unit 60 V 8 32 8 ±20 20 150 -55 ~ +150 A A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance g C C Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) C t t Turn-Off-Time toff (ton=td(off)+tf) t t DS(on) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=4A VGS=4V fs ID=4A ID=4A Typ. Max. Unit V V µA mA nA 1,5 10 0,2 10 0,22 2,5 500 1,0 100 0,35 0,15 6 300 0,22 450 Ω Ω S pF VGS=0V f=1MHz 110 40 170 60 pF pF r VCC=30V ID=8A 7 30 10 45 ns ns d(off) VGS=10V 50 75 ns RGS=25Ω IF=2xIDR VGS=0V Tch=25°C 20 1,2 30 1,8 ns V IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C 50 GSS iss oss rss d(on) f Diode Forward On-Voltage Reverse Recovery Time V t - Thermal Characteristics Item Symbol Thermal Resistance Min. 60 1,0 SD rr VGS=10V VDS=25V VDS=25V Test conditions R th(ch-a) channel to air R th(ch-c) channel to case 3 Min. Typ. ns Max. Unit 62,5 °C/W 6,25 °C/W Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 2SK1083-MR N-channel MOS-FET 60V 0,22Ω 8A F-III Series 20W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID Gate Threshold Voltage vs. Tch ↑ ID [A] → Tch [°C] VDS [V] C [nF] 8 VDS [V] → Qg [nC] Allowable Power Dissipation vs. TC ↑ ↑ IF [A] ↑ → Forward Characteristics of Reverse Diode VGS [V] Typical Input Charge 7 6 VGS(th) [V] 5 → Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Safe operation area Zth(ch-c) [K/W] ↑ ↑ 12 11 ID [A] 10 PD [W] ↑ Transient Thermal impedance Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice! Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com